PROCEEDINGS VOLUME 2322
14TH ANNUAL BACUS SYMPOSIUM ON PHOTOMASK TECHNOLOGY AND MANAGEMENT | 14-16 SEPTEMBER 1994
14th Annual BACUS Symposium on Photomask Technology and Management
14TH ANNUAL BACUS SYMPOSIUM ON PHOTOMASK TECHNOLOGY AND MANAGEMENT
14-16 September 1994
Santa Clara, CA, United States
Inspection and Repair
Proc. SPIE 2322, Mask making: today's enabling technology, 0000 (7 December 1994); doi: 10.1117/12.195804
Proc. SPIE 2322, Meeting the challenge of advanced lithography reticle inspection, 0000 (7 December 1994); doi: 10.1117/12.195814
Proc. SPIE 2322, Focused ion beam phase-shift mask repair (fib or fact?), 0000 (7 December 1994); doi: 10.1117/12.195824
Proc. SPIE 2322, Focused ion beam (FIB) repair of embedded shifter masks, 0000 (7 December 1994); doi: 10.1117/12.195833
Proc. SPIE 2322, High-resolution UV laser repair of phase-shifting photomasks, 0000 (7 December 1994); doi: 10.1117/12.195841
Photomask Pattern Generation
Proc. SPIE 2322, Technical performance of the ALTA-3000 laser writer, 0000 (7 December 1994); doi: 10.1117/12.195845
Proc. SPIE 2322, Advanced mask and reticle generation using EBES4, 0000 (7 December 1994); doi: 10.1117/12.195846
Proc. SPIE 2322, Improved excimer laser pattern generator for photomask fabrication, 0000 (7 December 1994); doi: 10.1117/12.195847
Proc. SPIE 2322, MEBES 4000 optimization and characterization of MEBES 4500, 0000 (7 December 1994); doi: 10.1117/12.195805
Proc. SPIE 2322, Evaluation of image-placement distortion contributors of the EL-3+ electron-beam lithography system in x-ray mask fabrication, 0000 (7 December 1994); doi: 10.1117/12.195806
Photomask Resist and Process
Proc. SPIE 2322, PBS resist profile studies for submicron mask lithography, 0000 (7 December 1994); doi: 10.1117/12.195807
Proc. SPIE 2322, Initial results for a PBS replacement resist, 0000 (7 December 1994); doi: 10.1117/12.195808
Proc. SPIE 2322, Reticle processes for 256-Mbit DRAM, 0000 (7 December 1994); doi: 10.1117/12.195809
Proc. SPIE 2322, Investigation of a negative i-line resist with the CORE-2564 laser writer, 0000 (7 December 1994); doi: 10.1117/12.195810
Pelliclization and Cleaning
Proc. SPIE 2322, Mask industry quality assessment, 0000 (7 December 1994); doi: 10.1117/12.195811
Proc. SPIE 2322, Photomask cleaning: areas for future focus, 0000 (7 December 1994); doi: 10.1117/12.195812
Proc. SPIE 2322, Design and fabrication of soft defect test reticles, 0000 (7 December 1994); doi: 10.1117/12.195813
Proc. SPIE 2322, Effect of pressure differentials on pelliclized photomasks, 0000 (7 December 1994); doi: 10.1117/12.195815
Proc. SPIE 2322, Advanced pelliclization techniques, 0000 (7 December 1994); doi: 10.1117/12.195816
Wafer Proximity and Overlay Correction
Proc. SPIE 2322, CD data requirements for proximity effect corrections, 0000 (7 December 1994); doi: 10.1117/12.195817
Proc. SPIE 2322, Optical proximity correction: a first look at manufacturability, 0000 (7 December 1994); doi: 10.1117/12.195818
Proc. SPIE 2322, Optimizing proximity correction for wafer fabrication processes, 0000 (7 December 1994); doi: 10.1117/12.195819
Proc. SPIE 2322, Design optimization of optical proximity correction mask for device manufacturing, 0000 (7 December 1994); doi: 10.1117/12.195820
Proc. SPIE 2322, Reticle correction technique to minimize lens distortion effects, 0000 (7 December 1994); doi: 10.1117/12.195821
Phase-shifting Masks and Metrology
Proc. SPIE 2322, Toppan's work on phase-shift mask for 64MDRAM, 0000 (7 December 1994); doi: 10.1117/12.195822
Proc. SPIE 2322, Chromium-based attenuated phase shifter for DUV exposure, 0000 (7 December 1994); doi: 10.1117/12.195823
Proc. SPIE 2322, Chromium-based attenuated embedded shifter preproduction, 0000 (7 December 1994); doi: 10.1117/12.195825
Proc. SPIE 2322, Phase-shift mask metrology using scatterometry, 0000 (7 December 1994); doi: 10.1117/12.195826
Proc. SPIE 2322, Quality assurance of focused ion beam (FIB) repaired areas, 0000 (7 December 1994); doi: 10.1117/12.195827
Poster Session
Proc. SPIE 2322, Predicting mask yields through the use of a yield model, 0000 (7 December 1994); doi: 10.1117/12.195828
Proc. SPIE 2322, Optimizing 0.25-um lithography using confocal microscopy, 0000 (7 December 1994); doi: 10.1117/12.195829
Proc. SPIE 2322, Implementation of high-contrast novolak resist process for sub-0.5-um e-beam lithography, 0000 (7 December 1994); doi: 10.1117/12.195830
Proc. SPIE 2322, Improving photomask linewidth measurement accuracy via emulated stepper aerial image measurement, 0000 (7 December 1994); doi: 10.1117/12.195831
Proc. SPIE 2322, Metrology test reticles for advanced optical lithography, 0000 (7 December 1994); doi: 10.1117/12.195832
Photomask Resist and Process
Proc. SPIE 2322, Application of charge-dissipation material in MEBES phase-shift mask fabrication, 0000 (7 December 1994); doi: 10.1117/12.195834
Poster Session
Proc. SPIE 2322, Large-area optical proximity correction using pattern-based corrections, 0000 (7 December 1994); doi: 10.1117/12.195835
Proc. SPIE 2322, Attenuated phase-shifting mask blanks for the deep ultraviolet, 0000 (7 December 1994); doi: 10.1117/12.195836
Proc. SPIE 2322, Two-level masks for increased depth of focus, 0000 (7 December 1994); doi: 10.1117/12.195837
Advanced Lithography Masks for Gigabit Generations: Technology Requirements and Approaches
Proc. SPIE 2322, National lithography roadmap: wafer requirements in the year 2000, 0000 (7 December 1994); doi: 10.1117/12.195838
Proc. SPIE 2322, Importance of mask technical specifications on the lithography error budget, 0000 (7 December 1994); doi: 10.1117/12.195839
Proc. SPIE 2322, Life after the 256-Mb DRAM: e-beam mask makers at the year 2000, 0000 (7 December 1994); doi: 10.1117/12.195840
Proc. SPIE 2322, Overview of extreme ultraviolet lithography, 0000 (7 December 1994); doi: 10.1117/12.195842
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