PROCEEDINGS VOLUME 2332
ADVANCED LASER TECHNOLOGIES: INTERNATIONAL SYMPOSIUM | 8-13 NOVEMBER 1993
Second International Symposium on Advanced Laser Technologies
ADVANCED LASER TECHNOLOGIES: INTERNATIONAL SYMPOSIUM
8-13 November 1993
Prague, Czech Republic
Laser Methods of Surface Treatment and Modification
Proc. SPIE 2332, Laser annealing of thin semiconductor films, 0000 (12 December 1994); doi: 10.1117/12.195876
Proc. SPIE 2332, Formation of ohmic contacts to Si and InP by laser-stimulated diffusion methods, 0000 (12 December 1994); doi: 10.1117/12.195887
Proc. SPIE 2332, Optically induced changes of magnetization of YBaCuO samples: crucial examination of the states with fractional statistics in high-Tc cuprates, 0000 (12 December 1994); doi: 10.1117/12.195888
Proc. SPIE 2332, Laser processing of Y1Ba2Cu3O7 superconducting thin films, 0000 (12 December 1994); doi: 10.1117/12.195889
Proc. SPIE 2332, Structural transformation in laser processing of steel, 0000 (12 December 1994); doi: 10.1117/12.195890
Proc. SPIE 2332, Laser welding in optoelectronics, 0000 (12 December 1994); doi: 10.1117/12.195891
Proc. SPIE 2332, Pulsed laser deposition of multilayered structures, 0000 (12 December 1994); doi: 10.1117/12.195892
Laser Chemistry and Resonant Action of Laser Radiation
Proc. SPIE 2332, Resonance photodesorption of atoms from a surface of solids, 0000 (12 December 1994); doi: 10.1117/12.195893
Proc. SPIE 2332, Numerical investigation of laser slip-flow gas mixture separation, 0000 (12 December 1994); doi: 10.1117/12.195894
Proc. SPIE 2332, Resonant electromagnetic field effect on dimers, 0000 (12 December 1994); doi: 10.1117/12.195877
Proc. SPIE 2332, Integration of photochemical processes of silicon surface cleaning with deposition of thin solid films, 0000 (12 December 1994); doi: 10.1117/12.195878
Novel Materials for Optics and Optoelectronics
Proc. SPIE 2332, Nonlinear optical properties of CuCl nanocrystallites, 0000 (12 December 1994); doi: 10.1117/12.195879
Proc. SPIE 2332, Preparation and optical properties of porous silicon, 0000 (12 December 1994); doi: 10.1117/12.195880
Proc. SPIE 2332, Novel technique for porous Si film preparation, 0000 (12 December 1994); doi: 10.1117/12.195881
Proc. SPIE 2332, Near-infrared laser production of fullerenes, 0000 (12 December 1994); doi: 10.1117/12.195882
Proc. SPIE 2332, Fluorescence of porous glass doped by C60, 0000 (12 December 1994); doi: 10.1117/12.195883
Light Scattering and Laser Methods of Diagnostics
Proc. SPIE 2332, Nondestructive method for visualization of free carrier accumulations in standard semiconductors wafers, 0000 (12 December 1994); doi: 10.1117/12.195884
Proc. SPIE 2332, Application of IR laser light scattering for nondestructive control of near-surface regions in semiconductor substrates, 0000 (12 December 1994); doi: 10.1117/12.195885
Proc. SPIE 2332, Remarkable properties of an optical parametric oscillator with multiple frequencies, 0000 (12 December 1994); doi: 10.1117/12.195886
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