PROCEEDINGS VOLUME 2334
MICROELECTRONIC MANUFACTURING | 18-22 OCTOBER 1994
Microelectronics Manufacturability, Yield, and Reliability
IN THIS VOLUME

0 Sessions, 38 Papers, 0 Presentations
MLM I  (2)
MLM II  (4)
Late News  (1)
Oxide  (6)
Devices  (3)
Posters  (11)
MICROELECTRONIC MANUFACTURING
18-22 October 1994
Austin, TX, United States
MLM I
Proc. SPIE 2334, Yield: it's now an entitlement, 0000 (14 September 1994); doi: 10.1117/12.186736
Proc. SPIE 2334, Electromigration characteristics for Al-Ge-Cu, 0000 (14 September 1994); doi: 10.1117/12.186744
MLM II
Proc. SPIE 2334, Effect of heat treatments on electromigration performance for TiN/AlCu/TiN interconnect, 0000 (14 September 1994); doi: 10.1117/12.186763
Proc. SPIE 2334, Subpopulation model for void-related early failure in VLSI interconnects, 0000 (14 September 1994); doi: 10.1117/12.186768
Proc. SPIE 2334, Improved PVD TiW manufacturability using advanced chamber shield design, 0000 (14 September 1994); doi: 10.1117/12.186769
Proc. SPIE 2334, Defect isolation using electron-beam probing RIE in multilevel high-density ASICs, 0000 (14 September 1994); doi: 10.1117/12.186770
Late News
Proc. SPIE 2334, High-coverage barrier-film formation by ionized cluster beam, 0000 (14 September 1994); doi: 10.1117/12.186771
Yield Enhancement
Proc. SPIE 2334, Yield enhancement with particle defects reduction, 0000 (14 September 1994); doi: 10.1117/12.186772
Proc. SPIE 2334, Monitoring of highly selective plasma etch processes, 0000 (14 September 1994); doi: 10.1117/12.186737
Proc. SPIE 2334, Effects of resist strip processing damage on the electrical characteristics of 0.8-um a-Si antifuse circuit elements, 0000 (14 September 1994); doi: 10.1117/12.186738
Proc. SPIE 2334, Yield enhancement through monitoring of real-time manufacturing processes, 0000 (14 September 1994); doi: 10.1117/12.186739
Proc. SPIE 2334, New phenomenon in ion/laser beam semiconductor microstructure fabrication: impact on reliability, 0000 (14 September 1994); doi: 10.1117/12.186933
Proc. SPIE 2334, Exoelectron emission testing of technology inserting point defects into semiconductors, 0000 (14 September 1994); doi: 10.1117/12.186740
Oxide
Proc. SPIE 2334, Effects of plasma-etching-induced gate oxide degradation on MOSFET's 1/f noise, 0000 (14 September 1994); doi: 10.1117/12.186741
Proc. SPIE 2334, Surface cleaning effects on reliability for devices with ultrathin oxides or oxynitrides, 0000 (14 September 1994); doi: 10.1117/12.186742
Proc. SPIE 2334, In-line monitoring of thin oxide on production wafers using large scribe line capacitors, 0000 (14 September 1994); doi: 10.1117/12.186743
Proc. SPIE 2334, Yield enhancement by modification of wet oxide strip processes, 0000 (14 September 1994); doi: 10.1117/12.186745
Proc. SPIE 2334, Influence of quartz glass on silicon wafers during thermal processing, 0000 (14 September 1994); doi: 10.1117/12.186746
Proc. SPIE 2334, Effects of P+-implanted poly-Si gate with and without TiSi2 on the injection degradation of thin film oxides, 0000 (14 September 1994); doi: 10.1117/12.186747
Devices
Proc. SPIE 2334, Reduction of low-level current leakage in CMOS devices, 0000 (14 September 1994); doi: 10.1117/12.186748
Proc. SPIE 2334, Characterization and modeling of base current in n-p-n polysilicon emitter bipolar transistors using low-frequency noise analysis, 0000 (14 September 1994); doi: 10.1117/12.186749
Proc. SPIE 2334, Plasma-induced gate oxide degradation and its impact on oxide reliability for CMOS FETs, 0000 (14 September 1994); doi: 10.1117/12.186750
FA/Statistics
Proc. SPIE 2334, Memory failure analysis using EB voltage contrast image, 0000 (14 September 1994); doi: 10.1117/12.186751
Proc. SPIE 2334, Methodology for identification of process-induced electrically active defects, 0000 (14 September 1994); doi: 10.1117/12.186752
Proc. SPIE 2334, Progressive censoring: an efficient method to reduce time consumption of accelerated lifetime tests, 0000 (14 September 1994); doi: 10.1117/12.186753
Proc. SPIE 2334, Emission local testing of mechanical stresses in surface layer of silicon, 0000 (14 September 1994); doi: 10.1117/12.186754
Posters
Proc. SPIE 2334, Reliability improvement of integrated circuits through alkali contamination reduction in dielectric films, 0000 (14 September 1994); doi: 10.1117/12.186755
Proc. SPIE 2334, Integrated approach to yield enhancement, 0000 (14 September 1994); doi: 10.1117/12.186756
Proc. SPIE 2334, Mapping of silicon wafers on shallow, middle, and deep level centers, 0000 (14 September 1994); doi: 10.1117/12.186757
Proc. SPIE 2334, Defect isolation using scan path testing and electron beam probing in multilevel high-density ASICs, 0000 (14 September 1994); doi: 10.1117/12.186758
Proc. SPIE 2334, Faster approach to ASIC diagnosis: LPISEM, 0000 (14 September 1994); doi: 10.1117/12.186759
Proc. SPIE 2334, Reliability simulator for improving IC manufacturability, 0000 (14 September 1994); doi: 10.1117/12.186760
Proc. SPIE 2334, Semi-empirical MOCVD modeling using neural networks, 0000 (14 September 1994); doi: 10.1117/12.186761
Proc. SPIE 2334, New methodology for dynamic lot dispatching, 0000 (14 September 1994); doi: 10.1117/12.186762
Proc. SPIE 2334, Statistical metrology for interlevel dielectric thickness variation, 0000 (14 September 1994); doi: 10.1117/12.186764
Proc. SPIE 2334, Temperature-cycle-induced chip surface damage in lead-on-chip packages, 0000 (14 September 1994); doi: 10.1117/12.186765
Proc. SPIE 2334, Practical application of a wafer-level reliability control program, 0000 (14 September 1994); doi: 10.1117/12.186766
Yield Enhancement
Proc. SPIE 2334, Cost and yield estimation in a virtual IC factory, 0000 (14 September 1994); doi: 10.1117/12.186767
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