PROCEEDINGS VOLUME 2335
MICROELECTRONIC MANUFACTURING | 18-22 OCTOBER 1994
Microelectronics Technology and Process Integration
MICROELECTRONIC MANUFACTURING
18-22 October 1994
Austin, TX, United States
Plasma Etching and Planarization
Proc. SPIE 2335, Chemical mechanical planarization of multilayer dielectric stacks, 0000 (9 September 1994); doi: 10.1117/12.186045
Proc. SPIE 2335, Planarization using chemical mechanical planarization (CMP) on a 16-megabit SRAM with quadruple polysilicon stacks, 0000 (9 September 1994); doi: 10.1117/12.186054
Proc. SPIE 2335, Spin-on-glass (SOG) partial etch-back planarization process with 0.4-um gap filling ability, 0000 (9 September 1994); doi: 10.1117/12.186064
Proc. SPIE 2335, Issues associated with submicron via formation, 0000 (9 September 1994); doi: 10.1117/12.186071
Proc. SPIE 2335, Plasma etching of high-temperature-deposited AlSiCu for submicron ULSI manufacturing, 0000 (9 September 1994); doi: 10.1117/12.186072
Proc. SPIE 2335, New route to thermal dry-etching of copper using hydrogen peroside (H2O2) and hexafluoroacetylacetone (HFACH), 0000 (9 September 1994); doi: 10.1117/12.186073
Proc. SPIE 2335, Surface charging effect on microloading for sub-quarter-micron contact etching, 0000 (9 September 1994); doi: 10.1117/12.186074
Metallization Technologies
Proc. SPIE 2335, Planar multilevel metallization technologies for ULSI devices, 0000 (9 September 1994); doi: 10.1117/12.186046
Proc. SPIE 2335, Copper interconnection schemes: elimination of the need of diffusion barrier/adhesion promoter by the use of corrosion-resistant low-resistivity-doped copper, 0000 (9 September 1994); doi: 10.1117/12.186047
Proc. SPIE 2335, Manufacturing issues in copper chemical vapor deposition processes, 0000 (9 September 1994); doi: 10.1117/12.186048
Proc. SPIE 2335, Comparison study between tungsten and aluminum plug for submicrometer contact via manufacturing, 0000 (9 September 1994); doi: 10.1117/12.186049
Proc. SPIE 2335, Effects of tungsten deposition on site focal plane deviation, 0000 (9 September 1994); doi: 10.1117/12.186050
Proc. SPIE 2335, Wirebond pull test failures at rapid thermal processes (RTP) TiN/BPSG interface, 0000 (9 September 1994); doi: 10.1117/12.186051
Metallization Technologies and Laser-Induced Processes
Proc. SPIE 2335, Improved aluminum plug process for submicron via filling, 0000 (9 September 1994); doi: 10.1117/12.186052
Proc. SPIE 2335, High rate premetallization sputter etching of submicron vias using a high-density dual-frequency plasma source, 0000 (9 September 1994); doi: 10.1117/12.186053
Proc. SPIE 2335, Laser-induced microfracture leading to high-density metal-to-metal connections, 0000 (9 September 1994); doi: 10.1117/12.186055
Proc. SPIE 2335, As-deposited properties and rapid thermal annealing effects on Ti/TiN barrier layer for aluminum plug technology, 0000 (9 September 1994); doi: 10.1117/12.186056
Proc. SPIE 2335, Analytic models and parametric investigations of IBE and RIE mechanisms for GaAs compounds, 0000 (9 September 1994); doi: 10.1117/12.186057
Proc. SPIE 2335, Three-dimensional laser micromachining, 0000 (9 September 1994); doi: 10.1117/12.186058
Dielectric and Device Modeling
Proc. SPIE 2335, Analysis and design considerations for manufacturable and reliable 0.18-micron N-MOSFETs, 0000 (9 September 1994); doi: 10.1117/12.186059
Proc. SPIE 2335, Analysis and modeling of submicron drain-offset polysilicon thin film transistors (TFTs), 0000 (9 September 1994); doi: 10.1117/12.186060
Proc. SPIE 2335, New hot-carrier-resistant P-I-N MOSFET structure, 0000 (9 September 1994); doi: 10.1117/12.186061
Proc. SPIE 2335, Crystal-free and low-flow-angle ILD by using in situ SACVD/PE BPSG for 0.5-um application, 0000 (9 September 1994); doi: 10.1117/12.186062
Proc. SPIE 2335, Thin-gate dielectric films grown in N2O and O2 using rapid thermal oxidation, 0000 (9 September 1994); doi: 10.1117/12.186063
Proc. SPIE 2335, High-quality sub-5-nm oxynitride dielectric films grown on silicon in a nitric oxide ambient using rapid thermal processing, 0000 (9 September 1994); doi: 10.1117/12.186065
Proc. SPIE 2335, Model for the growth of oxides in N2O, 0000 (9 September 1994); doi: 10.1117/12.186066
Proc. SPIE 2335, Characterization of a high-quality and UV-transparent PECVD silicon nitride film for nonvolatile memory applications, 0000 (9 September 1994); doi: 10.1117/12.186067
Metallization Technologies
Proc. SPIE 2335, Submicron-size laser treatment of the solid state surface, 0000 (9 September 1994); doi: 10.1117/12.186068
Proc. SPIE 2335, New conception in transistor technology using nonhomogenous temperature field, 0000 (9 September 1994); doi: 10.1117/12.186069
Metallization Technologies and Laser-Induced Processes
Proc. SPIE 2335, Chemical Vapor deposition (CVD) TiN: a barrier metallization for submicron via and contact applications, 0000 (9 September 1994); doi: 10.1117/12.186070
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