PROCEEDINGS VOLUME 2336
MICROELECTRONIC MANUFACTURING | 18-22 OCTOBER 1994
Manufacturing Process Control for Microelectronic Devices and Circuits
MICROELECTRONIC MANUFACTURING
18-22 October 1994
Austin, TX, United States
Advanced Manufacturing Process
Proc. SPIE 2336, Process controls for the factories of the future, 0000 (16 September 1994); doi: 10.1117/12.186773
Proc. SPIE 2336, Radio frequency diagnostics for plasma etch systems, 0000 (16 September 1994); doi: 10.1117/12.186784
Proc. SPIE 2336, Photocluster control system implementation at the IBM Advanced Semiconductor Technology Center, 0000 (16 September 1994); doi: 10.1117/12.186794
Proc. SPIE 2336, Advanced statistical process control of a chemical vapor tungsten deposition process on an Applied Materials Centura reactor, 0000 (16 September 1994); doi: 10.1117/12.186797
Proc. SPIE 2336, Scatterometric sensor for lithography, 0000 (16 September 1994); doi: 10.1117/12.186798
Proc. SPIE 2336, On-line SPC-based trigger for control action, 0000 (16 September 1994); doi: 10.1117/12.186799
Computer-Controlled Manufacturing
Proc. SPIE 2336, Vigorous capital and development investments required: playing in the semiconductor manufacturing industry endgame, 0000 (16 September 1994); doi: 10.1117/12.186800
Proc. SPIE 2336, Knowledge-based very large scale integration (VLSI) process diagnostic system, 0000 (16 September 1994); doi: 10.1117/12.186801
Proc. SPIE 2336, Comparison of controller tuning methods for temperature uniformity control in a rapid thermal processor, 0000 (16 September 1994); doi: 10.1117/12.186774
Proc. SPIE 2336, Radio frequency tags systems to initiate system processing, 0000 (16 September 1994); doi: 10.1117/12.186775
Proc. SPIE 2336, Model-based equipment diagnosis, 0000 (16 September 1994); doi: 10.1117/12.186776
Proc. SPIE 2336, Measurement of discharge impedance for dry etch process control, 0000 (16 September 1994); doi: 10.1117/12.186777
Proc. SPIE 2336, Pulse-modulated infrared-laser interferometric thermometry for Si substrate temperature measurement, 0000 (16 September 1994); doi: 10.1117/12.186778
Sensor-Based Advanced Manufacturing Controls
Proc. SPIE 2336, Process control using new approaches in plasma diagnostics, 0000 (16 September 1994); doi: 10.1117/12.186779
Proc. SPIE 2336, Use of chemical sensors and process control methods to improve HF chemical etching of dielectric films in a manufacturing environment, 0000 (16 September 1994); doi: 10.1117/12.186780
Proc. SPIE 2336, Sensor bus control networks in semiconductor processing equipment, 0000 (16 September 1994); doi: 10.1117/12.186781
Proc. SPIE 2336, Sensor bus cost of ownership investigation, 0000 (16 September 1994); doi: 10.1117/12.186782
Proc. SPIE 2336, MEMaterial: a new microelectronic material deposition tool, 0000 (16 September 1994); doi: 10.1117/12.186783
Proc. SPIE 2336, Thin film and surface layer processes forming control using electron emission, 0000 (16 September 1994); doi: 10.1117/12.186785
Advanced Manufacturing Control Issues
Proc. SPIE 2336, Using cost of ownership (COO) modeling to optimize productivity and wafer output of sputtering tools, 0000 (16 September 1994); doi: 10.1117/12.186786
Proc. SPIE 2336, Silicided versus nonsilicided gate technology for submicron CMOS ACIC applications, 0000 (16 September 1994); doi: 10.1117/12.186787
Proc. SPIE 2336, Implementation of activity-based costing (ABC) to drive cost reduction efforts in a semiconductor manufacturing operation, 0000 (16 September 1994); doi: 10.1117/12.186788
Proc. SPIE 2336, Integrated manufacturing approach to attain benchmark team performance, 0000 (16 September 1994); doi: 10.1117/12.186789
Proc. SPIE 2336, Methods for parametric yield control for future 0.1-um deep submicron MOSFET manufacturing, 0000 (16 September 1994); doi: 10.1117/12.186790
Proc. SPIE 2336, CHARM-2: a new tool for characterization of wafer charging in ion- and plasma-based IC processing equipment, 0000 (16 September 1994); doi: 10.1117/12.186791
Proc. SPIE 2336, Submodule for the laser vacuum projection lithography, 0000 (16 September 1994); doi: 10.1117/12.186792
Proc. SPIE 2336, Intellectual information system of precedent search and expert diagnostics of technological malfunctions in very large scale integration (VLSI) manufacturing, 0000 (16 September 1994); doi: 10.1117/12.186793
Proc. SPIE 2336, Characterization of deep-level defects and their connection with the performance of InxGa1-xAs/InP p-i-n photodiodes, 0000 (16 September 1994); doi: 10.1117/12.186795
Proc. SPIE 2336, True wafer temperature during metallization in physical vapor deposition cluster tools, 0000 (16 September 1994); doi: 10.1117/12.186796
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