PROCEEDINGS VOLUME 2337
MICROELECTRONIC MANUFACTURING | 18-22 OCTOBER 1994
Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing
IN THIS VOLUME

0 Sessions, 22 Papers, 0 Presentations
Session 1  (3)
Session 2  (4)
Session 3  (4)
Session 4  (4)
Session 5  (4)
Session 6  (3)
MICROELECTRONIC MANUFACTURING
18-22 October 1994
Austin, TX, United States
Session 1
Proc. SPIE 2337, Monitoring metallic contamination in the ultra large scale integration (ULSI) era, 0000 (14 September 1994); doi: 10.1117/12.186631
Proc. SPIE 2337, Surface charge effects in silicon wafer cleaning using surfactant-containing solutions, 0000 (14 September 1994); doi: 10.1117/12.186646
Proc. SPIE 2337, Single-photon ionization: laser optical probe technique for semiconductor growth, 0000 (14 September 1994); doi: 10.1117/12.186647
Session 2
Proc. SPIE 2337, Computer-generated hologram (CGH) in optical computing and neural network, 0000 (14 September 1994); doi: 10.1117/12.186648
Proc. SPIE 2337, TDR-like low-frequency circuit test and characterization system for package and module interconnects utilizing transient thermal signals, 0000 (14 September 1994); doi: 10.1117/12.186649
Proc. SPIE 2337, Low-cost laser scanning technique for CMOS latchup detection, 0000 (14 September 1994); doi: 10.1117/12.186650
Proc. SPIE 2337, Optical profilometer featuring multiple virtual styli for the packaging and interconnect environment, 0000 (14 September 1994); doi: 10.1117/12.186651
Session 3
Proc. SPIE 2337, Ex-situ and in-situ probing of Column IV interfaces using optical second harmonic generation, 0000 (14 September 1994); doi: 10.1117/12.186652
Proc. SPIE 2337, Display and analysis of 2D and 3D images obtained on semiconductor devices using a laser scanner, 0000 (14 September 1994); doi: 10.1117/12.186632
Proc. SPIE 2337, Characterization of polycrystalline silicon grain boundary structures by optical second harmonic generation, 0000 (14 September 1994); doi: 10.1117/12.186633
Proc. SPIE 2337, Investigation of stress/strain of silicon on insulator using optical second harmonic generation method, 0000 (14 September 1994); doi: 10.1117/12.186634
Session 4
Proc. SPIE 2337, Photocurrent imaging of silicon wafers using electrolyte contacts, 0000 (14 September 1994); doi: 10.1117/12.186635
Proc. SPIE 2337, Optical investigations of thin hydrogenated carbon (C:H) films, 0000 (14 September 1994); doi: 10.1117/12.186636
Proc. SPIE 2337, Practical, nondestructive method to profile near-surface and subsurface defects in semiconductor wafers, 0000 (14 September 1994); doi: 10.1117/12.186637
Proc. SPIE 2337, New surface minority carrier lifetime measurement technique, 0000 (14 September 1994); doi: 10.1117/12.186638
Session 5
Proc. SPIE 2337, Limitations of submicron holographic lithography, 0000 (14 September 1994); doi: 10.1117/12.186639
Proc. SPIE 2337, Lifetime effects of iron and iron complexes in silicon, 0000 (14 September 1994); doi: 10.1117/12.186640
Proc. SPIE 2337, New approach to measuring oxide charge and mobile ion concentration, 0000 (14 September 1994); doi: 10.1117/12.186641
Proc. SPIE 2337, Passive optical detection of ion implantation processing, 0000 (14 September 1994); doi: 10.1117/12.186642
Session 6
Proc. SPIE 2337, Small-spot thin-film thickness-measurements with Brewster's angle reflectometer, 0000 (14 September 1994); doi: 10.1117/12.186643
Proc. SPIE 2337, Photoemission from thin oxide layers amplified by an electric field, 0000 (14 September 1994); doi: 10.1117/12.186644
Proc. SPIE 2337, Effect of oxygen and carbon on donor formation in CZ-silicon, 0000 (14 September 1994); doi: 10.1117/12.186645
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