PROCEEDINGS VOLUME 2343
PHOTONICS FOR INDUSTRIAL APPLICATIONS | 31 OCTOBER - 4 NOVEMBER 1994
Optically Activated Switching IV
PHOTONICS FOR INDUSTRIAL APPLICATIONS
31 October - 4 November 1994
Boston, MA, United States
Characterization of Device Performance
Proc. SPIE 2343, Direct electro-optic measurement of the internal fields of GaAs photoconductive switches, 0000 (4 January 1995); doi: 10.1117/12.198645
Proc. SPIE 2343, Characterization of vertical GaAs optically activated switches, 0000 (4 January 1995); doi: 10.1117/12.198654
Proc. SPIE 2343, High-gain GaAs photoconductive semiconductor switches: measurement of filament velocity and reduced trigger energy, 0000 (4 January 1995); doi: 10.1117/12.198664
Modeling
Proc. SPIE 2343, Modeling of fast conductivity phenomena in semiconductors, 0000 (4 January 1995); doi: 10.1117/12.198666
Proc. SPIE 2343, Supralinear photoconductivity of copper-doped gallium arsenide, 0000 (4 January 1995); doi: 10.1117/12.198667
Proc. SPIE 2343, Pre-firing electric field distribution in semi-insulating GaAs bulk avalanche switches, 0000 (4 January 1995); doi: 10.1117/12.198668
Proc. SPIE 2343, Numerical analysis of direct current and transient characteristics on n+-i-n+ optically activated switches, 0000 (4 January 1995); doi: 10.1117/12.198669
Proc. SPIE 2343, Self-consistent 2D simulations of filament propagation in photoconducting switches, 0000 (4 January 1995); doi: 10.1117/12.198646
Applications
Proc. SPIE 2343, Optically activated switches for the generation of complex electrical waveforms with multigigahertz bandwidth, 0000 (4 January 1995); doi: 10.1117/12.198647
Proc. SPIE 2343, Industrial application of sintered thick-film bulk photoconductive switching devices, 0000 (4 January 1995); doi: 10.1117/12.198648
Proc. SPIE 2343, Electromagnetic wave interaction with laser-induced plasmas in GaAs, 0000 (4 January 1995); doi: 10.1117/12.198649
Other Materials and Complex Device Structures
Proc. SPIE 2343, Silicon carbide optoelectronic switches, 0000 (4 January 1995); doi: 10.1117/12.198650
Proc. SPIE 2343, Optical switching of bipolar-mode field effect transistors, 0000 (4 January 1995); doi: 10.1117/12.198651
Proc. SPIE 2343, Energy extraction from superconducting magnets using optically activated YBa2Cu3O7-x switches, 0000 (4 January 1995); doi: 10.1117/12.198652
Proc. SPIE 2343, High-power high-repetition-rate operation of a bistable optically controlled semiconductor switch (BOSS), 0000 (4 January 1995); doi: 10.1117/12.198653
Breakdown and Lifetime Issues
Proc. SPIE 2343, High-gain GaAs photoconductive semiconductor switches (PCSS): device lifetime, high-current testing, optical pulse generators, 0000 (4 January 1995); doi: 10.1117/12.198655
Proc. SPIE 2343, Geometrical aspects of switch breakdown, 0000 (4 January 1995); doi: 10.1117/12.198656
Proc. SPIE 2343, Breakdown damages of photoconductive silicon at high fields, 0000 (4 January 1995); doi: 10.1117/12.198657
Characterization of Device Performance
Proc. SPIE 2343, Passive, 100-ps, x-ray-driven pulser for gating microchannel-plate detectors, 0000 (4 January 1995); doi: 10.1117/12.198658
Impulse Sources
Proc. SPIE 2343, High-gain GaAs photoconductive semiconductor switches for impulse sources, 0000 (4 January 1995); doi: 10.1117/12.198659
Proc. SPIE 2343, Tunable photoconductive switch-based microwave source, 0000 (4 January 1995); doi: 10.1117/12.198660
Proc. SPIE 2343, Multichannel impulse source using nonlinear transmission lines, 0000 (4 January 1995); doi: 10.1117/12.198661
Proc. SPIE 2343, Design and testing of a 500-kV trigatron with subnanosecond jitter, 0000 (4 January 1995); doi: 10.1117/12.198662
Proc. SPIE 2343, Compact megawatt subnanosecond impulse generators using conventional electronic components, 0000 (4 January 1995); doi: 10.1117/12.198663
Proc. SPIE 2343, Operation of optically activated GaAs switches in striplines of low impedance at voltages up to 30 kV, 0000 (4 January 1995); doi: 10.1117/12.198665
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