PROCEEDINGS VOLUME 2346
PHOTONICS FOR INDUSTRIAL APPLICATIONS | OCT 31 - NOV 4 1994
II-VI Blue/Green Laser Diodes
PHOTONICS FOR INDUSTRIAL APPLICATIONS
Oct 31 - Nov 4 1994
Boston, MA, United States
Blue/Green Laser Diodes--Growth, Performance, and Degradation
Proc. SPIE 2346, Blue/green laser diodes based on ZnMgSSe, 0000 (21 December 1994); doi: 10.1117/12.197247
Proc. SPIE 2346, Device processing of II-VI semiconductor lasers, 0000 (21 December 1994); doi: 10.1117/12.197258
Proc. SPIE 2346, Optical degradation of II-VI devices and heterostructures, 0000 (21 December 1994); doi: 10.1117/12.197262
Proc. SPIE 2346, Microstructure study of failure mechanism of II-VI blue-green laser diodes, 0000 (21 December 1994); doi: 10.1117/12.197263
Proc. SPIE 2346, Issues of epitaxial growth and transport for room temperature cw blue/green laser diodes, 0000 (21 December 1994); doi: 10.1117/12.197264
Epitaxial Growth for Blue/Green Light Emitters
Proc. SPIE 2346, Molecular beam epitaxy (MBE) growth of ZnMgSeTe light-emitting diodes, 0000 (21 December 1994); doi: 10.1117/12.197265
Proc. SPIE 2346, Doping of ZnSe using gas source molecular beam epitaxy, 0000 (21 December 1994); doi: 10.1117/12.197266
Proc. SPIE 2346, Growth of wide bandgap II-VI alloys on InP substrates by molecular beam epitaxy, 0000 (21 December 1994); doi: 10.1117/12.197267
Proc. SPIE 2346, Optimization of the MOVPE growth of ZnSe, ZnCdSe alloy and related heterostructures using various zinc precursor adducts, 0000 (21 December 1994); doi: 10.1117/12.197248
Physics of Wide Bandgap II-VI Heterostructures
Proc. SPIE 2346, Physics of gain and stimulated emission in II-VI diode lasers, 0000 (21 December 1994); doi: 10.1117/12.197249
Proc. SPIE 2346, Interfacial engineering in blue laser structures, 0000 (21 December 1994); doi: 10.1117/12.197250
Proc. SPIE 2346, Excitons and electron-hole plasma in ZnCdSe/ZnSe quantum wells, 0000 (21 December 1994); doi: 10.1117/12.197251
Proc. SPIE 2346, Electronic states and radiative recombination processes in ZnS-ZnSe short period superlattices, 0000 (21 December 1994); doi: 10.1117/12.197252
Proc. SPIE 2346, Modeling of optical gain in ZnCdSe/ZnMgSSe quantum well lasers, 0000 (21 December 1994); doi: 10.1117/12.197253
Heterovalent Interfaces and Other Issues
Proc. SPIE 2346, Initial stages of ZnSe growth on the GaAs(001) surface studied by scanning tunneling microscopy, 0000 (21 December 1994); doi: 10.1117/12.197254
Proc. SPIE 2346, Formation of screw-type misfit dislocations on the ZnSxSe1-x/GaAs interface, 0000 (21 December 1994); doi: 10.1117/12.197255
Proc. SPIE 2346, Preferential donor-acceptor pairing in heavily N-doped ZnSe?, 0000 (21 December 1994); doi: 10.1117/12.197256
Proc. SPIE 2346, Resonant tunneling structures to significantly reduce the voltage drop in contacting pZnSe layer in blue-green lasers: simulation of voltage-current behavior, 0000 (21 December 1994); doi: 10.1117/12.197257
Proc. SPIE 2346, Nanosize stress concentrators at facets in Zn1-xCdxSe/ZnSe multiple quantum well laser structures, 0000 (21 December 1994); doi: 10.1117/12.197259
Proc. SPIE 2346, Twelve reasons why II-VI compounds should be resistant to degradation, 0000 (21 December 1994); doi: 10.1117/12.197260
Blue/Green Laser Diodes--Growth, Performance, and Degradation
Proc. SPIE 2346, Gas source molecular beam epitaxy (MBE) of ZnMgSSe layers, 0000 (21 December 1994); doi: 10.1117/12.197261
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