PROCEEDINGS VOLUME 2364
THIN FILM PHYSICS AND APPLICATIONS: SECOND INTERNATIONAL CONFERENCE | 15-17 APRIL 1994
Second International Conference on Thin Film Physics and Applications
THIN FILM PHYSICS AND APPLICATIONS: SECOND INTERNATIONAL CONFERENCE
15-17 April 1994
Shanghai, China
Film Structure
Proc. SPIE 2364, Fibonacci sequence and Fibonacci metallic superlattices, 0000 (26 October 1994); doi: 10.1117/12.190714
Proc. SPIE 2364, Consequences of the microstructure of thin films on their optical properties, 0000 (26 October 1994); doi: 10.1117/12.190737
Proc. SPIE 2364, PbTi03 film processing and characterization, 0000 (26 October 1994); doi: 10.1117/12.190748
Proc. SPIE 2364, Optical properties of GaInAsSb/InAs epilayers grown by liquid phase epitaxy, 0000 (26 October 1994); doi: 10.1117/12.190759
Proc. SPIE 2364, Chemical composition and interface structure of silicon oxide grown by pure water anodization, 0000 (26 October 1994); doi: 10.1117/12.190770
Proc. SPIE 2364, Structural studies of Mo/Si multilayers by EXAFS, 0000 (26 October 1994); doi: 10.1117/12.190781
Proc. SPIE 2364, New approach to computer simulation of thin film deposition, 0000 (26 October 1994); doi: 10.1117/12.190792
Proc. SPIE 2364, Magnetoresistance oscillation of Si delta-doping GaAs multiple quantum well, 0000 (26 October 1994); doi: 10.1117/12.190803
Proc. SPIE 2364, Visible photoluminescent Ge nanocrystals embedded in a-SiNx films, 0000 (26 October 1994); doi: 10.1117/12.190814
Proc. SPIE 2364, Phase formation in annealed Ge/Fe multilayers, 0000 (26 October 1994); doi: 10.1117/12.190715
Proc. SPIE 2364, Formation characteristics and stability of nanometric TiN film in multilayers, 0000 (26 October 1994); doi: 10.1117/12.190726
Proc. SPIE 2364, Anomaly of the electrical properties for CoMnNiO nanocrystalline thin film, 0000 (26 October 1994); doi: 10.1117/12.190729
Proc. SPIE 2364, Structure quality determination of the Hg1-xCdxTe thin films, 0000 (26 October 1994); doi: 10.1117/12.190730
Proc. SPIE 2364, Electronic structures and optical properties of Bucky tubes, 0000 (26 October 1994); doi: 10.1117/12.190731
Proc. SPIE 2364, Microstructure of the source material for PbTe film deposition, 0000 (26 October 1994); doi: 10.1117/12.190732
Semiconductor and Silicon Films
Proc. SPIE 2364, Recent advances on luminescence in porous silicon, 0000 (26 October 1994); doi: 10.1117/12.190733
Proc. SPIE 2364, Growth and characterization of boron delta function shaped doping layer in silicon by molecular beam epitaxy, 0000 (26 October 1994); doi: 10.1117/12.190734
Proc. SPIE 2364, Effects of electric field on oxide growth with plasma anodization of silicon, 0000 (26 October 1994); doi: 10.1117/12.190735
Proc. SPIE 2364, Luminescent Si quantum dots films: preparation and characterization, 0000 (26 October 1994); doi: 10.1117/12.190736
Proc. SPIE 2364, Dual-beam photocurrent spectroscopy in undoped a-SI:H: a method for study of excited deep gap states in thin film semiconductors, 0000 (26 October 1994); doi: 10.1117/12.190738
Proc. SPIE 2364, Preparation of SiO2 film by direct photo-CVD on strained SiGe layer, 0000 (26 October 1994); doi: 10.1117/12.190739
Proc. SPIE 2364, Anomalous damage behavior of BF2+ implantation in silicon, 0000 (26 October 1994); doi: 10.1117/12.190740
Proc. SPIE 2364, Structure and characteristic of porous silicon layer, 0000 (26 October 1994); doi: 10.1117/12.190741
Proc. SPIE 2364, Modification of oxygen-doped polysilicon using ion implantation, 0000 (26 October 1994); doi: 10.1117/12.190742
Proc. SPIE 2364, Study of the selectivity of porous silicon formation, 0000 (26 October 1994); doi: 10.1117/12.190743
Proc. SPIE 2364, Infrared spectroscopy analysis of porous silicon: a comparison of various preparation conditions, 0000 (26 October 1994); doi: 10.1117/12.190744
Proc. SPIE 2364, Photoluminescence studies of carbon- and oxygen-related radiation damage point defects in crystalline silicon, 0000 (26 October 1994); doi: 10.1117/12.190745
Optical Films
Proc. SPIE 2364, Application of frustrated total reflection, 0000 (26 October 1994); doi: 10.1117/12.190746
Proc. SPIE 2364, Nonlinear integrated optics, 0000 (26 October 1994); doi: 10.1117/12.190747
Proc. SPIE 2364, Thin film beamsplitters, 0000 (26 October 1994); doi: 10.1117/12.190749
Proc. SPIE 2364, Amorphous silicon nitride binary-phase optical elements, 0000 (26 October 1994); doi: 10.1117/12.190750
Proc. SPIE 2364, Magneto-optical Kerr effect and interlayer coupling in Co/Cu, Fe/Ag multilayers, 0000 (26 October 1994); doi: 10.1117/12.190751
Proc. SPIE 2364, Novel absorption line shape induced by Tamm states in a finite-length GaAs/AlGaAs superlattice, 0000 (26 October 1994); doi: 10.1117/12.190752
Proc. SPIE 2364, Study of soft x-ray multilayer thin film, 0000 (26 October 1994); doi: 10.1117/12.190753
Proc. SPIE 2364, Optical performance of Mo/Si multilayer coated lamellar phase grating in soft x-ray domain, 0000 (26 October 1994); doi: 10.1117/12.190754
Proc. SPIE 2364, X-ray reflectivity analysis of Pt/Co multilayered films, 0000 (26 October 1994); doi: 10.1117/12.190755
Proc. SPIE 2364, Mask designing of linear variable filters, 0000 (26 October 1994); doi: 10.1117/12.190756
Proc. SPIE 2364, Rectangular variable wavelength filter, 0000 (26 October 1994); doi: 10.1117/12.190757
Proc. SPIE 2364, Transition and switching properties of the blue potassium molybdenum bronze thin films, 0000 (26 October 1994); doi: 10.1117/12.190758
Proc. SPIE 2364, Design of antireflection coatings at big incident angle, 0000 (26 October 1994); doi: 10.1117/12.190760
Surface and Interface
Proc. SPIE 2364, Local spin-density theory and effective ligand interaction model of interface magnetocrystalline anisotropy, 0000 (26 October 1994); doi: 10.1117/12.190761
Proc. SPIE 2364, Zr-ion bombardment effect on ZrO2/Zircaloy-4 system, 0000 (26 October 1994); doi: 10.1117/12.190762
Proc. SPIE 2364, Optical characterization of Si on insulator structure, 0000 (26 October 1994); doi: 10.1117/12.190763
Proc. SPIE 2364, Temperature-dependent trapping behaviors of thin-nitrided oxide films, 0000 (26 October 1994); doi: 10.1117/12.190764
Proc. SPIE 2364, Well-width dependence of Stark effect in ZnSe-ZnCdSe multiple quantum well modulators, 0000 (26 October 1994); doi: 10.1117/12.190765
Proc. SPIE 2364, High-resolution x-ray study of Ti/Fe interface with oxygen contamination, 0000 (26 October 1994); doi: 10.1117/12.190766
Proc. SPIE 2364, Absorption behavior of the thin silver films deposited on fracture surfaces of alpha-Al2O3 ceramics, 0000 (26 October 1994); doi: 10.1117/12.190767
Proc. SPIE 2364, Valence-band offsets at strained semiconductor heterojunctions, 0000 (26 October 1994); doi: 10.1117/12.190768
Compound Semiconductors
Proc. SPIE 2364, Spontaneous superlattice in GaInP alloy semiconductor, 0000 (26 October 1994); doi: 10.1117/12.190769
Proc. SPIE 2364, Strain effects and band offset control of GaxIn1-xAs/AlyIn1-yAs quantum wells, 0000 (26 October 1994); doi: 10.1117/12.190771
Proc. SPIE 2364, Influence of environmental parameters on the electrophotographic characteristics of organic photoconductor thin films, 0000 (26 October 1994); doi: 10.1117/12.190772
Proc. SPIE 2364, High-quality InP epitaxial layers grown by metal-organic chemical vapor deposition using tertiarybutylphosphine (TBP) source, 0000 (26 October 1994); doi: 10.1117/12.190773
Proc. SPIE 2364, Heterojunction Fe:InP/InGaAs Schottky and MESFETs grown by MOCVD, 0000 (26 October 1994); doi: 10.1117/12.190774
Proc. SPIE 2364, Study of GaSb Schottky contacts, 0000 (26 October 1994); doi: 10.1117/12.190775
Proc. SPIE 2364, AES investigation of anodic film on HCT crystal, 0000 (26 October 1994); doi: 10.1117/12.190776
Optoelectronics Films
Proc. SPIE 2364, Growth and surface structure of epitaxial Be thin films, 0000 (26 October 1994); doi: 10.1117/12.190777
Proc. SPIE 2364, Charge collection in a-Si:H/a-Si1-xCx multilayers photodetectors, 0000 (26 October 1994); doi: 10.1117/12.190778
Proc. SPIE 2364, Optical properties of sputtered Ge films, 0000 (26 October 1994); doi: 10.1117/12.190779
Proc. SPIE 2364, Evaporated SnS semiconducting thin films, 0000 (26 October 1994); doi: 10.1117/12.190780