PROCEEDINGS VOLUME 2373
SOLID STATE CRYSTALS: MATERIALS SCIENCE AND APPLICATIONS | 23-27 OCTOBER 1994
Solid State Crystals: Materials Science and Applications
IN THIS VOLUME

0 Sessions, 60 Papers, 0 Presentations
Applications  (7)
SOLID STATE CRYSTALS: MATERIALS SCIENCE AND APPLICATIONS
23-27 October 1994
Zakopane, Poland
Crystal Growth
Proc. SPIE 2373, Recent advances in crystal growth of selected oxides by Czochralski method, 0000 (16 October 1995); doi: 10.1117/12.224931
Proc. SPIE 2373, Surfactants in heteroepitaxy of strained semiconductor structures, 0000 (16 October 1995); doi: 10.1117/12.224942
Proc. SPIE 2373, Scope of the low-temperature growth of bulk II-VI compounds, 0000 (16 October 1995); doi: 10.1117/12.224953
Proc. SPIE 2373, Hot-wall-beam epitaxy and atomic-layer epitaxy of II-VI compounds for optoelectronics, 0000 (16 October 1995); doi: 10.1117/12.224964
Proc. SPIE 2373, Developments in floating zone silicon crystal growth, 0000 (16 October 1995); doi: 10.1117/12.224975
Proc. SPIE 2373, Crystals for frequency doubling and waveguide devices, 0000 (16 October 1995); doi: 10.1117/12.224986
Proc. SPIE 2373, Growth of La3Ga5SiO14: a modern material for high-temperature piezoelectric application, 0000 (16 October 1995); doi: 10.1117/12.224988
Proc. SPIE 2373, LiYF4 (YLF) single crystals doped with rare-earth elements, 0000 (16 October 1995); doi: 10.1117/12.224989
Proc. SPIE 2373, Single crystal growth and optical properties of LiNbO3 doped with Er3+, Tm3+ and Mg2+, 0000 (16 October 1995); doi: 10.1117/12.224990
Proc. SPIE 2373, Growth of Cr4+:YAG crystals for applications in laser techniques, 0000 (16 October 1995); doi: 10.1117/12.224932
Proc. SPIE 2373, Growth and characterization of SrLaAlO4 (SLAO) single crystals, 0000 (16 October 1995); doi: 10.1117/12.224933
Proc. SPIE 2373, Crystal growth of undoped semi-insulating InP, 0000 (16 October 1995); doi: 10.1117/12.224934
Proc. SPIE 2373, Possibility of preparation of TiC single crystals from molten metallic solutions, 0000 (16 October 1995); doi: 10.1117/12.224935
Proc. SPIE 2373, Blue coloration of KNbO3 single crystals, 0000 (16 October 1995); doi: 10.1117/12.224936
Proc. SPIE 2373, Automatic facility for crystal growth from solution studies in microgravity conditions, 0000 (16 October 1995); doi: 10.1117/12.224937
Proc. SPIE 2373, Usefulness of new sophisticated methods for crystal growth from solution studies, 0000 (16 October 1995); doi: 10.1117/12.224938
Proc. SPIE 2373, Investigation of the kinetics of gelation for TMS gel containing KDP, 0000 (16 October 1995); doi: 10.1117/12.224939
Proc. SPIE 2373, Relation between morphology, growth kinetics, and quality of sodium chlorate crystals grown from pure and sodium-dithionate-doped solutions, 0000 (16 October 1995); doi: 10.1117/12.224940
Proc. SPIE 2373, Solubility and thermodynamical properties of some growth solutions of fluoranthene, 0000 (16 October 1995); doi: 10.1117/12.224941
Proc. SPIE 2373, Optimalization of growth solution volume for investigations of growth and nucleation processes, 0000 (16 October 1995); doi: 10.1117/12.224943
Proc. SPIE 2373, Growth and nucleation of fluoranthene crystals from some organic solutions, 0000 (16 October 1995); doi: 10.1117/12.224944
Proc. SPIE 2373, Rate constant of the ion recombination in ionic solutions: unexpected results of computer experiments, 0000 (16 October 1995); doi: 10.1117/12.224945
Proc. SPIE 2373, Modifications of Monte-Carlo crystal growth model, 0000 (16 October 1995); doi: 10.1117/12.224946
Proc. SPIE 2373, Effect of step-distance approximations on growth unit concentration, 0000 (16 October 1995); doi: 10.1117/12.224947
Proc. SPIE 2373, Au(100) surface reconstruction observed by scanning tunneling microscopy in air, 0000 (16 October 1995); doi: 10.1117/12.224948
Characterization of Solid State Crystals
Proc. SPIE 2373, Computer modeling of carrier transport in binary lead salt photodiodes, 0000 (16 October 1995); doi: 10.1117/12.224949
Proc. SPIE 2373, Energy levels in strained semiconductor heterojunctions, 0000 (16 October 1995); doi: 10.1117/12.224950
Proc. SPIE 2373, Properties of type II mismatched PbTe/PbS superlattices, 0000 (16 October 1995); doi: 10.1117/12.224951
Proc. SPIE 2373, TLM algorithms for Laplace and Poisson fields in semiconductor transport, 0000 (16 October 1995); doi: 10.1117/12.224952
Proc. SPIE 2373, Pulsed heating of solids: modeling by the transmission line method, 0000 (16 October 1995); doi: 10.1117/12.224954
Proc. SPIE 2373, Optimization procedure of the determination of semiconductor doping profiles right up to its surface using the MIS capacitor, 0000 (16 October 1995); doi: 10.1117/12.224955
Proc. SPIE 2373, Dynamic and thermodynamic properties of strongly anharmonic cubic crystals in the self-consistent phonon theory, 0000 (16 October 1995); doi: 10.1117/12.224956
Proc. SPIE 2373, New methods for determining trap parameters in semiconductors from TSC and TL spectra, 0000 (16 October 1995); doi: 10.1117/12.224957
Proc. SPIE 2373, TSC and TL in spatially correlated systems, 0000 (16 October 1995); doi: 10.1117/12.224958
Proc. SPIE 2373, Is the quasi-equilibrium approximation in description of thermally stimulated luminescence and conductivity valid?, 0000 (16 October 1995); doi: 10.1117/12.224959
Proc. SPIE 2373, Radiation-induced defects in gadolinium gallium garnet (GGG) single crystals, 0000 (16 October 1995); doi: 10.1117/12.224960
Proc. SPIE 2373, Dysprozium-activated calcium sulphate in gamma dosimetry, 0000 (16 October 1995); doi: 10.1117/12.224961
Proc. SPIE 2373, Time dependence of electroluminescence due to energy transfer in thin ZnS:Mn films excited by short rectangular voltage pulses, 0000 (16 October 1995); doi: 10.1117/12.224962
Proc. SPIE 2373, Luminescence properties of ZnxMg1-xSe layers, 0000 (16 October 1995); doi: 10.1117/12.224963
Proc. SPIE 2373, Mechanism of generation of visible luminescence from porous silicon, 0000 (16 October 1995); doi: 10.1117/12.224965
Proc. SPIE 2373, Temperature dependence of visible luminescence from porous silicon, 0000 (16 October 1995); doi: 10.1117/12.224966
Proc. SPIE 2373, Elastic properties of n-ZnSe single crystals by Brillouin scattering, 0000 (16 October 1995); doi: 10.1117/12.224967
Proc. SPIE 2373, X-ray powder diffraction study of some dopant positions in unit cells of chosen AIIBVI compounds crystals, 0000 (16 October 1995); doi: 10.1117/12.224968
Proc. SPIE 2373, Ferroelastic domains in LiKSO4 single crystals, 0000 (16 October 1995); doi: 10.1117/12.224969
Proc. SPIE 2373, Raman study of phase transitions in guanidinium iodide, 0000 (16 October 1995); doi: 10.1117/12.224970
Proc. SPIE 2373, Tunneling and Raman scattering in ab plane of Bi2Sr2CaCu2O8 single crystal, 0000 (16 October 1995); doi: 10.1117/12.224971
Proc. SPIE 2373, Influence of carbon doping on physical properties of SI GaAs, 0000 (16 October 1995); doi: 10.1117/12.224972
Proc. SPIE 2373, New absorption lines in SI-GaAs related to As vacancy, 0000 (16 October 1995); doi: 10.1117/12.224973
Proc. SPIE 2373, Optical and lasing properties of the Czochralski-grown SrLaGa3O7:Nd single crystals, 0000 (16 October 1995); doi: 10.1117/12.224974
Proc. SPIE 2373, Application of automated polarimeter macroscope for investigation of optical inhomogeneity in oxide single crystals, 0000 (16 October 1995); doi: 10.1117/12.224976
Proc. SPIE 2373, Microstress in high-pressure temperature-treated Czochralski-grown silicon with oxygen concentration up to 1.2x 10<sup>18</sup> cm<sup>-3</sup>, 0000 (16 October 1995); doi: 10.1117/12.224977
Proc. SPIE 2373, Scanning tunneling microscope on homo-epitaxial, boron-doped diamond films, 0000 (16 October 1995); doi: 10.1117/12.224978
Proc. SPIE 2373, Two methods of coercive field and spontaneous polarization determination based on dielectric hysteresis loop measurements, 0000 (16 October 1995); doi: 10.1117/12.224979
Applications
Proc. SPIE 2373, Experimental comparison of staring IR sensor technologies including PV HgCdTe, PV InGaAs, and quantum well GaAs/AlGaAs, 0000 (16 October 1995); doi: 10.1117/12.224980
Proc. SPIE 2373, GaAs/AlGaAs quantum well infrared detectors among the other types of semiconductor infrared detectors, 0000 (16 October 1995); doi: 10.1117/12.224981
Proc. SPIE 2373, LWIR p+-n photodiodes fabricated with HgCdTe bulk material, 0000 (16 October 1995); doi: 10.1117/12.224982
Proc. SPIE 2373, Characterization of p-on-n HgCdTe diffusion photodiodes, 0000 (16 October 1995); doi: 10.1117/12.224983
Proc. SPIE 2373, Theoretical performance of near-room-temperature long-wavelength Hg<sub>1-x</sub>Cd<sub>x</sub>Te photovoltaic infrared detectors, 0000 (16 October 1995); doi: 10.1117/12.224984
Proc. SPIE 2373, Thermoluminescence in ionizing radiation dosimetry, 0000 (16 October 1995); doi: 10.1117/12.224985
Proc. SPIE 2373, Electrochemiluminescence display technology, 0000 (16 October 1995); doi: 10.1117/12.224987