PROCEEDINGS VOLUME 2397
PHOTONICS WEST '95 | 1-28 FEBRUARY 1995
Optoelectronic Integrated Circuit Materials, Physics, and Devices
PHOTONICS WEST '95
1-28 February 1995
San Jose, CA, United States
Optoelectronics I
Proc. SPIE 2397, Parallel optical interconnection for high-speed data links, 0000 (24 April 1995); doi: 10.1117/12.206865
Proc. SPIE 2397, Optical, electronic, magnetic, and superconducting properties of quasiperiodic quantum dot arrays synthesized by a novel electrochemical technique, 0000 (24 April 1995); doi: 10.1117/12.206875
Proc. SPIE 2397, Monolithic integration of 1.3-um InGaAs photodetectors and high-electron-mobility transistor (HEMT) electronic circuits on GaAs, 0000 (24 April 1995); doi: 10.1117/12.206885
Optoelectronics II: Lasers
Proc. SPIE 2397, E-beam-pumped semiconductor lasers, 0000 (24 April 1995); doi: 10.1117/12.206904
Proc. SPIE 2397, High-power flared semiconductor laser amplifiers, 0000 (24 April 1995); doi: 10.1117/12.206910
Proc. SPIE 2397, Dynamics of ridge-guide strained-layer multiple quantum well 1.3- and 1.55-um semiconductor lasers, 0000 (24 April 1995); doi: 10.1117/12.206919
Proc. SPIE 2397, Novel accurate measurement technique for carrier lifetime in 1.5-um semiconductor laser, 0000 (24 April 1995); doi: 10.1117/12.206929
Proc. SPIE 2397, AlGaInP/GaInP visible laser diodes with extremely high characteristic temperature To, 0000 (24 April 1995); doi: 10.1117/12.206856
Material and Characterization I
Proc. SPIE 2397, Femtosecond dynamics studies of coherent phonon generation, 0000 (24 April 1995); doi: 10.1117/12.206857
Proc. SPIE 2397, Characterization of semiconductor device structures using contactless electromodulation, 0000 (24 April 1995); doi: 10.1117/12.206858
Proc. SPIE 2397, Spin tracing: a tool of interface characterization in structures with semimagnetic semiconductors, 0000 (24 April 1995); doi: 10.1117/12.206859
Proc. SPIE 2397, Optical characterization and dimension determination of polyaniline films, 0000 (24 April 1995); doi: 10.1117/12.206860
Characterization
Proc. SPIE 2397, Use of scanning probe microscopies to study transport in semiconductor heterostructures, 0000 (24 April 1995); doi: 10.1117/12.206861
Proc. SPIE 2397, Calculation of third-order optical susceptibilities due to excitonic nonlinearities in rectangular GaAs/AlGaAs quantum well wires with finite Al-graded band offsets included, 0000 (24 April 1995); doi: 10.1117/12.206862
Proc. SPIE 2397, Modulated photoellipsometry measurements of GaAs internal field, 0000 (24 April 1995); doi: 10.1117/12.206863
Proc. SPIE 2397, Photoreflectance spectroscopy of metalorganic chemical vapor deposition (MOCVD)-grown GaAs and GaAs/GaAlAs structures, 0000 (24 April 1995); doi: 10.1117/12.206864
Proc. SPIE 2397, Electroluminescence of confined carriers in type II broken-gap p-GaInAsSb/p-InAs single heterojunction, 0000 (24 April 1995); doi: 10.1117/12.206866
Optoelectronics III: Detectors
Proc. SPIE 2397, Technology for infrared sensors produced in low volume, 0000 (24 April 1995); doi: 10.1117/12.206867
Proc. SPIE 2397, Improved performance of IR photodetectors with 3D gap engineering, 0000 (24 April 1995); doi: 10.1117/12.206868
Proc. SPIE 2397, Quantum well and superlattice heterostructures for space-based long-wavelength infrared photodetectors, 0000 (24 April 1995); doi: 10.1117/12.206869
Proc. SPIE 2397, Ultraviolet detectors for astrophysics: present and future, 0000 (24 April 1995); doi: 10.1117/12.206870
Proc. SPIE 2397, Optical effect in small geometry devices, 0000 (24 April 1995); doi: 10.1117/12.206871
Optoelectronics IV
Proc. SPIE 2397, High-brightness laser diode arrays, 0000 (24 April 1995); doi: 10.1117/12.206872
Proc. SPIE 2397, Fabrication of dense optoelectronic device arrays, 0000 (24 April 1995); doi: 10.1117/12.206873
Proc. SPIE 2397, High-detection resolution presented by large-area thin-film position-sensitive detectors, 0000 (24 April 1995); doi: 10.1117/12.206874
Proc. SPIE 2397, Damage-free indium-tin-oxide contacts to indium-phosphide-based devices, 0000 (24 April 1995); doi: 10.1117/12.206876
Materials and Characterization II
Proc. SPIE 2397, Semiconductors of the future, and the future is now!, 0000 (24 April 1995); doi: 10.1117/12.206877
Proc. SPIE 2397, Optoelectronic devices based on GaN, AlGaN, InGaN homo-heterojunctions and superlattices, 0000 (24 April 1995); doi: 10.1117/12.206878
Proc. SPIE 2397, Optoelectronic GaN-based field effect transistors, 0000 (24 April 1995); doi: 10.1117/12.206879
Proc. SPIE 2397, Nonlinear optical properties of metal-nitride thin films, 0000 (24 April 1995); doi: 10.1117/12.206880
Proc. SPIE 2397, Low-pressure metalorganic chemical vapor deposition of high-quality AlN and GaN thin films on sapphire and silicon substrates, 0000 (24 April 1995); doi: 10.1117/12.206881
Optoelectronics V
Proc. SPIE 2397, III-V semiconductors for midinfrared lasers: progress and future trends, 0000 (24 April 1995); doi: 10.1117/12.206882
Proc. SPIE 2397, Aluminum-free 980-nm laser diodes for Er-doped optical fiber amplifiers, 0000 (24 April 1995); doi: 10.1117/12.206883
Proc. SPIE 2397, Overview of OMVPE optoelectronic material growth at the Jet Propulsion Laboratory, 0000 (24 April 1995); doi: 10.1117/12.206884
Proc. SPIE 2397, Bulk poling of lithium niobate for frequency conversion applications, 0000 (24 April 1995); doi: 10.1117/12.206886
Proc. SPIE 2397, Ultrafast hole tunneling in asymmetric double quantum wells, 0000 (24 April 1995); doi: 10.1117/12.206887
Proc. SPIE 2397, Molecular beam epitaxial growth of InSb p-i-n photodetectors on GaAs and Si, 0000 (24 April 1995); doi: 10.1117/12.206888
Optoelectronics VI
Proc. SPIE 2397, High-speed and high-power field effect transistors as drivers of optical modulation systems: physical limitations, state of the art, and trends, 0000 (24 April 1995); doi: 10.1117/12.206889
Proc. SPIE 2397, New concepts of optoelectronic integrated circuits for microwave applications: MOMICs, 0000 (24 April 1995); doi: 10.1117/12.206890
Proc. SPIE 2397, Er-doped sol-gel glasses for integrated optics, 0000 (24 April 1995); doi: 10.1117/12.206891
Proc. SPIE 2397, Novel applications of low-energy ions in molecular beam epitaxy of III-V semiconductors, 0000 (24 April 1995); doi: 10.1117/12.206892
Proc. SPIE 2397, Aluminum-free quantum well intersubband photodetectors with p-type GaAs wells and lattice-matched ternary and quaternary barriers, 0000 (24 April 1995); doi: 10.1117/12.206893
Proc. SPIE 2397, Variation of threshold current with well-barrier hole-burning effect in quantum well lasers, 0000 (24 April 1995); doi: 10.1117/12.206894
Optoelectronics VII
Proc. SPIE 2397, Lasers based on intersubband transitions in quantum wells, 0000 (24 April 1995); doi: 10.1117/12.206895
Proc. SPIE 2397, Er-doped Si/SiO2 microcavities, 0000 (24 April 1995); doi: 10.1117/12.206896
Proc. SPIE 2397, Semiconductor microcavity light-emitting structures, 0000 (24 April 1995); doi: 10.1117/12.206897
Proc. SPIE 2397, Design, fabrication, and modeling of high-speed metal-semiconductor-metal (MSM) photodetectors with indium-tin-oxide (ITO) and Ti/Pt/Au contacts, 0000 (24 April 1995); doi: 10.1117/12.206898
Proc. SPIE 2397, High-power coherent sources based on antiguided structures, 0000 (24 April 1995); doi: 10.1117/12.206899
Proc. SPIE 2397, New solid state photomultiplier, 0000 (24 April 1995); doi: 10.1117/12.206900
Materials and Characterization III
Proc. SPIE 2397, Application of synchrotron radiation to semiconductor surfaces, interfaces, and heterostructures, 0000 (24 April 1995); doi: 10.1117/12.206901
Proc. SPIE 2397, Metalorganic chemical vapor deposition (MOCVD) and atomic force microscopy (AFM) study of high-quality Bi-2223 superconducting thin films, 0000 (24 April 1995); doi: 10.1117/12.206902
Proc. SPIE 2397, Accurate determination of surface coverage in migration-enhanced epitaxy of compound semiconductors, 0000 (24 April 1995); doi: 10.1117/12.206903
Proc. SPIE 2397, Defects and interfaces in low-temperature grown Ge/Si heterostructures, 0000 (24 April 1995); doi: 10.1117/12.206905
Materials and Characterization IV
Proc. SPIE 2397, Electron transmission through ultrathin metal layers and its spin dependence for magnetic structures, 0000 (24 April 1995); doi: 10.1117/12.206906
Proc. SPIE 2397, Ferroelectric oxide thin films for photonic applications, 0000 (24 April 1995); doi: 10.1117/12.206907
Proc. SPIE 2397, Constraints imposed by the data on a successful theory of high-temperature superconductivity, 0000 (24 April 1995); doi: 10.1117/12.206908
Proc. SPIE 2397, Optical and electrical properties of doped poly-3-octylthiophene films, 0000 (24 April 1995); doi: 10.1117/12.206909
Poster Session
Proc. SPIE 2397, Thermal population from hole mixing tunneling in asymmetric coupled double wells, 0000 (24 April 1995); doi: 10.1117/12.206911