PROCEEDINGS VOLUME 2438
SPIE'S 1995 SYMPOSIUM ON MICROLITHOGRAPHY | 19-24 FEBRUARY 1995
Advances in Resist Technology and Processing XII
SPIE'S 1995 SYMPOSIUM ON MICROLITHOGRAPHY
19-24 February 1995
Santa Clara, CA, United States
DUV Resist Materials
Proc. SPIE 2438, Considerations in the development of deep-UV photoresist materials and processes, 0000 (9 June 1995); doi: 10.1117/12.210340
Proc. SPIE 2438, Influence of acid generator structure on T-top formation in high-temperature bake processes for environmental stabilization, 0000 (9 June 1995); doi: 10.1117/12.210353
Proc. SPIE 2438, Effect of dissolution inhibitors on the dissolution characteristics of chemically amplified positive-tone electron beam resist, 0000 (9 June 1995); doi: 10.1117/12.210362
Proc. SPIE 2438, DUV positive resist system designed for Micrascan use, 0000 (9 June 1995); doi: 10.1117/12.210373
Proc. SPIE 2438, Structural design of ketal and acetal blocking groups in two-component chemically amplified positive DUV resists, 0000 (9 June 1995); doi: 10.1117/12.210382
DUV Resist Fundamentals
Proc. SPIE 2438, Kinetics of chemically amplified resists, 0000 (9 June 1995); doi: 10.1117/12.210391
Proc. SPIE 2438, Optimization of dissolution-rate characteristics of chemically amplified positive resist, 0000 (9 June 1995); doi: 10.1117/12.210399
Proc. SPIE 2438, Optimization of CD control in DUV positive resists: influence of photoresist viscoelastic properties on PEB conditions, 0000 (9 June 1995); doi: 10.1117/12.210408
Proc. SPIE 2438, Investigation into the origin of microbridging in chemically amplified negative-tone photoresists, 0000 (9 June 1995); doi: 10.1117/12.210418
Novolak Resist Fundamentals
Proc. SPIE 2438, Study for the design of high-resolution novolak-DNQ photoresist: the effects of low-molecular-weight phenolic compounds on resist systems, 0000 (9 June 1995); doi: 10.1117/12.210344
Proc. SPIE 2438, Profile defects in novolac/DNQ resists: I. formation of microgrooves, 0000 (9 June 1995); doi: 10.1117/12.210345
Proc. SPIE 2438, Performance properties of near-monodisperse novolak resins, 0000 (9 June 1995); doi: 10.1117/12.210346
Proc. SPIE 2438, Effect of molecular weight distribution on the dissolution properties of novolac blends, 0000 (9 June 1995); doi: 10.1117/12.210347
Proc. SPIE 2438, Formulation and modeling of dyed positive i-line resist for control of the reflective notching and CD variation, 0000 (9 June 1995); doi: 10.1117/12.210348
Novolak/DNQ Interactions
Proc. SPIE 2438, Effect of PAC structure and resist morphology on the control of surface inhibition in positive photoresist systems, 0000 (9 June 1995); doi: 10.1117/12.210349
Proc. SPIE 2438, Spectroscopic characterization of molecular interactions between DNQ-PACs and phenolic resins using selectively nitrogen-15 labeled DNQs, 0000 (9 June 1995); doi: 10.1117/12.210350
Proc. SPIE 2438, Mechanism of inhibitor action in novolak film, 0000 (9 June 1995); doi: 10.1117/12.210351
193-nm Resists and Processes
Proc. SPIE 2438, Evaluation of chemically amplified resist based on adamantyl methacrylate for 193-nm lithography, 0000 (9 June 1995); doi: 10.1117/12.210352
Proc. SPIE 2438, Positive chemically amplified resist for ArF excimer laser lithography composed of a novel transparent photoacid generator and an alicyclic terpolymer, 0000 (9 June 1995); doi: 10.1117/12.210354
Proc. SPIE 2438, Chemically ampilified ArF excimer laser resists using the absorption band shift method, 0000 (9 June 1995); doi: 10.1117/12.210355
Proc. SPIE 2438, Optimization of a 193-nm silylation process for sub-0.25-um lithography, 0000 (9 June 1995); doi: 10.1117/12.210356
Proc. SPIE 2438, High-resolution surface imaging process using difunctional silylating reagent B(DMA)MS for ArF excimer laser lithography, 0000 (9 June 1995); doi: 10.1117/12.210357
Substrate Issues and Airborne Contamination in CA Resists
Proc. SPIE 2438, Investigation of deep-ultraviolet photoresists on TiN substrates, 0000 (9 June 1995); doi: 10.1117/12.210358
Proc. SPIE 2438, Effects of substrate treatment in positive chemically amplified resist, 0000 (9 June 1995); doi: 10.1117/12.210359
Proc. SPIE 2438, Environmentally stable chemically amplified resist effects of organic salt additives, 0000 (9 June 1995); doi: 10.1117/12.210360
Proc. SPIE 2438, Effect of basic additives on sensitivity and diffusion of acid in chemical amplification resists, 0000 (9 June 1995); doi: 10.1117/12.210361
Aspects of Processing
Proc. SPIE 2438, Shot-size reduction of photoresist formulations, 0000 (9 June 1995); doi: 10.1117/12.210363
Proc. SPIE 2438, Photolithography process characterization and 3D simulation using track-mounted development rate monitor data, 0000 (9 June 1995); doi: 10.1117/12.210364
Proc. SPIE 2438, Thick film photoresist resolution enhancement with surfactant surface treatment, 0000 (9 June 1995); doi: 10.1117/12.210365
Proc. SPIE 2438, Use of wafer curvature measurement (WCM) techniques in the determination of the process window of positive DUV resists, 0000 (9 June 1995); doi: 10.1117/12.210366
Proc. SPIE 2438, Supercritical fluid processing: a new dry technique for photoresist developing, 0000 (9 June 1995); doi: 10.1117/12.210367
Special Topics
Proc. SPIE 2438, All-dry resist processes for 193-nm lithography, 0000 (9 June 1995); doi: 10.1117/12.210368
Proc. SPIE 2438, Aminodisilanes as silylating agents for dry-developed positive-tone resists for deep-ultraviolet (248-nm) and extreme ultraviolet (13.5-nm) microlithography, 0000 (9 June 1995); doi: 10.1117/12.210369
Proc. SPIE 2438, Chemically amplified resist convertible into inorganic silicate glass (GPR), 0000 (9 June 1995); doi: 10.1117/12.210370
Proc. SPIE 2438, t-Boc protected poly(p-hydroxystyrene-alt-carbon monoxide): a new class of deep-UV resists, 0000 (9 June 1995); doi: 10.1117/12.210371
Proc. SPIE 2438, Novel inorganic photoinitiators, 0000 (9 June 1995); doi: 10.1117/12.210372
DUV Resist Materials
Proc. SPIE 2438, Process optimization of a positive-tone chemically amplified resist for 0.25-um lithography using a vector scan e-beam tool, 0000 (9 June 1995); doi: 10.1117/12.210374
Proc. SPIE 2438, Reaction diffusion kinetics in deep-UV positive-tone resist systems, 0000 (9 June 1995); doi: 10.1117/12.210375
Proc. SPIE 2438, Quantitative analysis of chemically amplified negative photoresist using mirror-backed infrared reflection absorption spectroscopy, 0000 (9 June 1995); doi: 10.1117/12.210376
Proc. SPIE 2438, Characterization and modeling of a positive-acting chemically amplified resist, 0000 (9 June 1995); doi: 10.1117/12.210377
Proc. SPIE 2438, Nonconstant diffusion coefficients: short description of modeling and comparison to experimental results, 0000 (9 June 1995); doi: 10.1117/12.210378
Substrate Issues and Airborne Contamination in CA Resists
Proc. SPIE 2438, UV pretreatments for improved etching of organic antireflective coating (ARC) layer, 0000 (9 June 1995); doi: 10.1117/12.210379
Proc. SPIE 2438, Characterization of profile dependency on nitride substrate thickness for a chemically amplified I-line negative resist, 0000 (9 June 1995); doi: 10.1117/12.210380
Proc. SPIE 2438, Improved resist profiles and CD control through optimized thin dielectric stacks, 0000 (9 June 1995); doi: 10.1117/12.210381
Proc. SPIE 2438, Effect of reducing the contaminant concentration when patterning a chemically amplified positive resist, 0000 (9 June 1995); doi: 10.1117/12.210383
Proc. SPIE 2438, Mechanism of amine additive in chemically amplified resist visualized by using Monte Carlo simulation, 0000 (9 June 1995); doi: 10.1117/12.210384
Proc. SPIE 2438, Direct evaluation of airborne contamination in chemically amplified resist films, 0000 (9 June 1995); doi: 10.1117/12.210385
Proc. SPIE 2438, Contamination control for processing DUV chemically amplified photoresists, 0000 (9 June 1995); doi: 10.1117/12.210386
Novolak/DNQ Interactions
Proc. SPIE 2438, Molecular simulation of photoresists I: basic techniques for molecular simulation, 0000 (9 June 1995); doi: 10.1117/12.210387
Proc. SPIE 2438, Molecular simulation of photoresists II: application to PAC diffusion, 0000 (9 June 1995); doi: 10.1117/12.210388
Proc. SPIE 2438, Nonlinear imaging effects using high-contrast resists, 0000 (9 June 1995); doi: 10.1117/12.210389
Proc. SPIE 2438, Thermal rearrangement of novolak resins used in microlithography, 0000 (9 June 1995); doi: 10.1117/12.210390
Proc. SPIE 2438, Utilizing contrast enhancement material as a topside antireflective coating (TARC) for maximizing an i-line 0.35-um process window, 0000 (9 June 1995); doi: 10.1117/12.210392
Proc. SPIE 2438, Dielectric and chemical characteristics of electron-beam-cured photoresist, 0000 (9 June 1995); doi: 10.1117/12.210393
Proc. SPIE 2438, Advanced photoresist for high-throughput i-line stepper applications, 0000 (9 June 1995); doi: 10.1117/12.210394
Proc. SPIE 2438, Nonchemically amplified positive photoresist for synchrotron radiation x-ray lithography, 0000 (9 June 1995); doi: 10.1117/12.210395
193-nm Resists and Processes