PROCEEDINGS VOLUME 2439
SPIE'S 1995 SYMPOSIUM ON MICROLITHOGRAPHY | 19-24 FEBRUARY 1995
Integrated Circuit Metrology, Inspection, and Process Control IX
SPIE'S 1995 SYMPOSIUM ON MICROLITHOGRAPHY
19-24 February 1995
Santa Clara, CA, United States
Lithographic Process Control I
Proc. SPIE 2439, Monitoring and diagnostic techniques for control of overlay in steppers, 0000 (22 May 1995); doi: 10.1117/12.209193
Proc. SPIE 2439, Characterization and monitoring of variable NA and variable coherence capable photosteppers utilizing the phase shift focus monitor reticle, 0000 (22 May 1995); doi: 10.1117/12.209205
Proc. SPIE 2439, Cycle-time reduction of CD targeting using automated metrology and analysis, 0000 (22 May 1995); doi: 10.1117/12.209214
Proc. SPIE 2439, Development of an end-point detection procedure for the post-expose bake process, 0000 (22 May 1995); doi: 10.1117/12.209225
Proc. SPIE 2439, Reaching for 0.25 um with current available tool set, 0000 (22 May 1995); doi: 10.1117/12.209231
Lithographic Process Control II
Proc. SPIE 2439, Near and sub-half-micrometer geometry SEM metrology requirements for good process control, 0000 (22 May 1995); doi: 10.1117/12.209238
Proc. SPIE 2439, Broadband UV small-spot spectroscopic ellipsometer, 0000 (22 May 1995); doi: 10.1117/12.209239
Proc. SPIE 2439, Simultaneous determination of thickness and optical constants of thin films, 0000 (22 May 1995); doi: 10.1117/12.209240
Proc. SPIE 2439, Application of spectroscopic ellipsometer technology to titanium nitride process monitoring, 0000 (22 May 1995); doi: 10.1117/12.209241
Proc. SPIE 2439, Measuring system XY-5i, 0000 (22 May 1995); doi: 10.1117/12.209194
Defect Detection and Inspection
Proc. SPIE 2439, SEM review of unpatterned particle monitor wafers, 0000 (22 May 1995); doi: 10.1117/12.209198
Proc. SPIE 2439, Extendibility of laser scanning tools for advanced wafer inspection, 0000 (22 May 1995); doi: 10.1117/12.209199
Proc. SPIE 2439, Characterization of a new automated electron-beam wafer inspection system, 0000 (22 May 1995); doi: 10.1117/12.209200
Proc. SPIE 2439, SEMI standards programmed defect masks and its application for defect inspection, 0000 (22 May 1995); doi: 10.1117/12.209201
Defects and More Defects
Proc. SPIE 2439, Lithography simulation of contamination-caused defects, 0000 (22 May 1995); doi: 10.1117/12.209202
Proc. SPIE 2439, Automatic defect classification: status and industry trends, 0000 (22 May 1995); doi: 10.1117/12.209203
Proc. SPIE 2439, Printability and repair of defects in rim and attenuated phase shift masks, 0000 (22 May 1995); doi: 10.1117/12.209204
Mask Metrology
Proc. SPIE 2439, Re-evaluation of the accuracy of NIST photmask linewidth standards, 0000 (22 May 1995); doi: 10.1117/12.209206
Proc. SPIE 2439, Metrology versus detection strategies for sub-half-micrometer reticles, 0000 (22 May 1995); doi: 10.1117/12.209207
Proc. SPIE 2439, Monolithic delay lines with current-induced adjustment of the electrical parameters: new approach in design and metrology, 0000 (22 May 1995); doi: 10.1117/12.209208
Overlay and Registration
Proc. SPIE 2439, Overlay measurements and standards, 0000 (22 May 1995); doi: 10.1117/12.209209
Proc. SPIE 2439, Effect of off-axis illumination on stepper overlay, 0000 (22 May 1995); doi: 10.1117/12.209210
Proc. SPIE 2439, Distortion compensation for accurate overlay in lithography of quasiperiodic patterns, 0000 (22 May 1995); doi: 10.1117/12.209211
Proc. SPIE 2439, Effective alignment technique and its implementation to enhance total overlay accuracy on highly reflective films, 0000 (22 May 1995); doi: 10.1117/12.209212
Proc. SPIE 2439, Characterization of chemical-mechanical polished overlay targets using coherence probe microscopy, 0000 (22 May 1995); doi: 10.1117/12.209213
SEM Metrology I
Proc. SPIE 2439, New approach in scanning electron microscope resolution evaluation, 0000 (22 May 1995); doi: 10.1117/12.209215
Proc. SPIE 2439, Automated CD measurements with the Hitachi S-6280, 0000 (22 May 1995); doi: 10.1117/12.209216
Proc. SPIE 2439, Multimode electron beam imaging and metrology, 0000 (22 May 1995); doi: 10.1117/12.209217
Proc. SPIE 2439, Monte Carlo simulation for CD SEM calibration and algorithm development, 0000 (22 May 1995); doi: 10.1117/12.209218
SEM Metrology II
Proc. SPIE 2439, Charge effect elimination for automatic CD inspection of 0.4 um contact holes in resist, 0000 (22 May 1995); doi: 10.1117/12.209219
Proc. SPIE 2439, New CD-SEM technology for 0.25 um production, 0000 (22 May 1995); doi: 10.1117/12.209220
Proc. SPIE 2439, Procedure for evaluating measurement system performance: a case study, 0000 (22 May 1995); doi: 10.1117/12.209221
Proc. SPIE 2439, Study on irradiation damage to semiconductor devices by 200 keV electrons caused by backscattered electron assisting LSI inspection (BEASTLI) method, 0000 (22 May 1995); doi: 10.1117/12.209222
Force Metrology
Proc. SPIE 2439, Atomic force microscope (AFM) analysis of photoresist test structures for use in SEM as in-house linewidth standards, 0000 (22 May 1995); doi: 10.1117/12.209223
Proc. SPIE 2439, Progress on accurate metrology of pitch, height, roughness, and width artifacts using an atomic force microscope, 0000 (22 May 1995); doi: 10.1117/12.209224
Novel Metrology Methods
Proc. SPIE 2439, CD control using latent image for lithography, 0000 (22 May 1995); doi: 10.1117/12.209226
Proc. SPIE 2439, Scatterometry for 0.24-0.70 um developed photoresist metrology, 0000 (22 May 1995); doi: 10.1117/12.209227
Proc. SPIE 2439, Metrology with the ultraviolet scanning transmission microscope, 0000 (22 May 1995); doi: 10.1117/12.209228
Poster Session
Proc. SPIE 2439, Deep-UV excimer laser measurements at NIST, 0000 (22 May 1995); doi: 10.1117/12.209229
Proc. SPIE 2439, Modeling the effect of defocus on the printability of submicrometer 5X reticle defects at g-line, i-line, and DUV wavelengths, 0000 (22 May 1995); doi: 10.1117/12.209230
Proc. SPIE 2439, Effect of numerical aperture and partial coherence on i-line swing curve amplitude at sub-half-micrometer resolution, 0000 (22 May 1995); doi: 10.1117/12.209232
Proc. SPIE 2439, Metrology of etched quartz and chrome embedded phase shift gratings using scatterometry, 0000 (22 May 1995); doi: 10.1117/12.209233
Proc. SPIE 2439, Resist coating optimization on eight inches Deep-UV litho cell: modelization and application to 0.25 um technology, 0000 (22 May 1995); doi: 10.1117/12.209234
Proc. SPIE 2439, Direct measurement of optical constants of metals from a KrF excimer using polarization methods, 0000 (22 May 1995); doi: 10.1117/12.209235
Proc. SPIE 2439, Methodology for reducing process variability through in situ production of positive photoresist developer, 0000 (22 May 1995); doi: 10.1117/12.209236
SEM Metrology II
Proc. SPIE 2439, Performance of the prototype NIST SRM 2090A SEM magnification standard in a low-accelerating voltage SEM, 0000 (22 May 1995); doi: 10.1117/12.209237
Plenary Session
Proc. SPIE 2439, Lithography and the future of Moore's law, 0000 (22 May 1995); doi: 10.1117/12.209195
Proc. SPIE 2439, Lithoraphy for ULSI, 0000 (22 May 1995); doi: 10.1117/12.209196
Proc. SPIE 2439, SEMATECH and the national technology roadmap: needs and challenges, 0000 (22 May 1995); doi: 10.1117/12.209197
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