PROCEEDINGS VOLUME 2440
SPIE'S 1995 SYMPOSIUM ON MICROLITHOGRAPHY | 19-24 FEBRUARY 1995
Optical/Laser Microlithography VIII
SPIE'S 1995 SYMPOSIUM ON MICROLITHOGRAPHY
19-24 February 1995
Santa Clara, CA, United States
Wavelength Choices
Proc. SPIE 2440, 193-nm full-field step-and-scan prototype at MIT Lincoln Laboratory, 0000 (26 May 1995); doi: 10.1117/12.209242
Proc. SPIE 2440, Step and scan: the maturing technology, 0000 (26 May 1995); doi: 10.1117/12.209256
Proc. SPIE 2440, Comparative study of i-line and DUV lithography for 0.35 um and beyond, 0000 (26 May 1995); doi: 10.1117/12.209266
Advanced Manufacturing
Proc. SPIE 2440, Lithography strategy for printing 0.35 um devices, 0000 (26 May 1995); doi: 10.1117/12.209277
Wavelength Choices
Proc. SPIE 2440, Implementation of i-line lithography to 0.30 um design rules, 0000 (26 May 1995); doi: 10.1117/12.209286
DUV Issues
Proc. SPIE 2440, Low cost of ownership KrF excimer laser using a novel pulse power and chamber configuration, 0000 (26 May 1995); doi: 10.1117/12.209294
Proc. SPIE 2440, KrF excimer laser with repetition rates of 1 kHz for DUV lithography, 0000 (26 May 1995); doi: 10.1117/12.209305
Proc. SPIE 2440, Feasibility study of argon fluoride excimer laser for microlithography, 0000 (26 May 1995); doi: 10.1117/12.209315
Proc. SPIE 2440, Degradation of fused silica at 193 nm and 213 nm, 0000 (26 May 1995); doi: 10.1117/12.209323
Proc. SPIE 2440, Deep-UV lithography using continuous-wave 266-nm radiation from an all solid state frequency quadrupled Nd:YAG laser, 0000 (26 May 1995); doi: 10.1117/12.209243
Proc. SPIE 2440, UV radiometry issues for UV stabilization of photoresist, 0000 (26 May 1995); doi: 10.1117/12.209247
Proc. SPIE 2440, Improvement of the ArF laser for photolithography, 0000 (26 May 1995); doi: 10.1117/12.209248
Pattern Proximity Correction I
Proc. SPIE 2440, Feature biasing versus feature-assisted lithography: a comparison of proximity correction methods for 0.5*(lambda/NA) lithography, 0000 (26 May 1995); doi: 10.1117/12.209249
Proc. SPIE 2440, Reduction of ASIC gate-level line-end shortening by mask compensation, 0000 (26 May 1995); doi: 10.1117/12.209250
Proc. SPIE 2440, Integrating proximity effect corrections with photomask data preparation, 0000 (26 May 1995); doi: 10.1117/12.209251
Proc. SPIE 2440, OPTIMASK: an OPC algorithm for chrome and phase-shift mask design, 0000 (26 May 1995); doi: 10.1117/12.209252
Proc. SPIE 2440, Practical evaluation of optical-proximity effect correction by EDM methodology, 0000 (26 May 1995); doi: 10.1117/12.209253
Pattern Proximity Correction II
Proc. SPIE 2440, Study of optical proximity effects using off-axis illumination with attenuated phase shift mask, 0000 (26 May 1995); doi: 10.1117/12.209254
Proc. SPIE 2440, Automatic optical proximity correction with optimization of stepper condition, 0000 (26 May 1995); doi: 10.1117/12.209255
Proc. SPIE 2440, Quantifying proximity and related effects in advanced wafer processes, 0000 (26 May 1995); doi: 10.1117/12.209257
Proc. SPIE 2440, Fast optical proximity correction: analytical method, 0000 (26 May 1995); doi: 10.1117/12.209258
Proc. SPIE 2440, Sub-micron low-k1 imaging characteristics using a DUV printing tool and binary masks, 0000 (26 May 1995); doi: 10.1117/12.209259
Proc. SPIE 2440, Effect of pattern density for contact windows in an attenuated phase shift mask, 0000 (26 May 1995); doi: 10.1117/12.209260
Proc. SPIE 2440, Automated design of halftoned double-exposure phase-shifting masks, 0000 (26 May 1995); doi: 10.1117/12.209261
Proc. SPIE 2440, Automated layout of mask assist-features for realizing 0.5 k1 ASIC lithography, 0000 (26 May 1995); doi: 10.1117/12.209262
Proc. SPIE 2440, Fast, low-complexity mask design, 0000 (26 May 1995); doi: 10.1117/12.209263
Proc. SPIE 2440, Optical proximity correction on attenuated phase-shifting photo mask for dense contact array, 0000 (26 May 1995); doi: 10.1117/12.209264
Lithography Simulation
Proc. SPIE 2440, Influence of photoresist on the optical performance of high NA steppers, 0000 (26 May 1995); doi: 10.1117/12.209265
Proc. SPIE 2440, Pattern-dependent correction of mask topography effects for alternating phase-shifting masks, 0000 (26 May 1995); doi: 10.1117/12.209267
Proc. SPIE 2440, Effects of wafer topography on the formation of polysilicon gates, 0000 (26 May 1995); doi: 10.1117/12.209268
Proc. SPIE 2440, Fast algorithms for 3D high NA lithography simulation, 0000 (26 May 1995); doi: 10.1117/12.209269
Proc. SPIE 2440, Comparison of scalar and vector modeling of image formation in photoresist, 0000 (26 May 1995); doi: 10.1117/12.209270
Proc. SPIE 2440, Three-dimensional reflective-notching simulation using multipole-accelerated physical optics approximation, 0000 (26 May 1995); doi: 10.1117/12.209271
Proc. SPIE 2440, Practical use of simulation for advanced lithography techniques, 0000 (26 May 1995); doi: 10.1117/12.209272
Proc. SPIE 2440, Efficient 3D phase-shifting mask lithography simulation, 0000 (26 May 1995); doi: 10.1117/12.209273
Proc. SPIE 2440, Yield modeling and enhancement for optical lithography, 0000 (26 May 1995); doi: 10.1117/12.209274
Proc. SPIE 2440, Simulation study of a new phase-shifting mask: halftone-rim, 0000 (26 May 1995); doi: 10.1117/12.209275
Proc. SPIE 2440, Focus effects in submicron optical lithography, part 4: metrics for depth of focus (Oral Standby), 0000 (26 May 1995); doi: 10.1117/12.209276
Proc. SPIE 2440, Focus shift and process latitude of contact holes on attenuated phase-shifting masks, 0000 (26 May 1995); doi: 10.1117/12.209278
Advanced Masks
Proc. SPIE 2440, Optical proximity correction using a transmittance-controlled mask (TCM), 0000 (26 May 1995); doi: 10.1117/12.209279
Proc. SPIE 2440, New system for fast submicron laser direct writing, 0000 (26 May 1995); doi: 10.1117/12.209280
Proc. SPIE 2440, Application of alternating phase shift mask to device fabrication, 0000 (26 May 1995); doi: 10.1117/12.209281
Proc. SPIE 2440, Contact performance with an attenuated phase shift reticle and variable partial coherence, 0000 (26 May 1995); doi: 10.1117/12.209282
Proc. SPIE 2440, Role of illumination and thin film layers on the printability of defects, 0000 (26 May 1995); doi: 10.1117/12.209283
Proc. SPIE 2440, Partial rim: a new design of rim phase shift mask for submicron contact holes, 0000 (26 May 1995); doi: 10.1117/12.209284
Proc. SPIE 2440, Relative merits of using maximum error versus 3(sigma) in describing the performance of laser-exposure reticle writing systems, 0000 (26 May 1995); doi: 10.1117/12.209285
Advanced Manufacturing
Proc. SPIE 2440, Sub-half-micron i-line photolithography process using AZ BARLi, 0000 (26 May 1995); doi: 10.1117/12.209287
Proc. SPIE 2440, Antireflection coating process characterization and improvement for DUV lithography at 0.25 um: ground rules, 0000 (26 May 1995); doi: 10.1117/12.209288
Proc. SPIE 2440, Impact of optical thin film effects on CD control in DUV lithography, 0000 (26 May 1995); doi: 10.1117/12.209289
Proc. SPIE 2440, Improving the backend focus budget for 0.5 um lithography, 0000 (26 May 1995); doi: 10.1117/12.209290
Proc. SPIE 2440, 0.35-um i-line poly processing with a bottom antireflective coating (BARC), 0000 (26 May 1995); doi: 10.1117/12.209291
Proc. SPIE 2440, Influence of substrate reflectivity on linewidth control, 0000 (26 May 1995); doi: 10.1117/12.209292
Lens Quality
Proc. SPIE 2440, Characterization of 5-X stepper lenses to improve depth of focus, 0000 (26 May 1995); doi: 10.1117/12.209293
Proc. SPIE 2440, Comparison of state-of-the-art DUV lenses, 0000 (26 May 1995); doi: 10.1117/12.209295
Proc. SPIE 2440, Detailed study of a phase shift focus monitor, 0000 (26 May 1995); doi: 10.1117/12.209296
Proc. SPIE 2440, Latent image metrology for production wafer steppers, 0000 (26 May 1995); doi: 10.1117/12.209297
Proc. SPIE 2440, Automatic laser-scanning focus detection method using printed focus pattern, 0000 (26 May 1995); doi: 10.1117/12.209298
Proc. SPIE 2440, New generation i-line lens for 0.35-um lithography, 0000 (26 May 1995); doi: 10.1117/12.209299