PROCEEDINGS VOLUME 2512
PHOTOMASK JAPAN 1995 | 20-21 APRIL 1995
Photomask and X-Ray Mask Technology II
PHOTOMASK JAPAN 1995
20-21 April 1995
Kanagawa, Japan
Photomask Process and Materials
Proc. SPIE 2512, Photomasks today and tomorrow, 0000 (3 July 1995); doi: 10.1117/12.212757
Proc. SPIE 2512, Delay time stable chemically amplified e-beam negative tone resist for optical mask application, 0000 (3 July 1995); doi: 10.1117/12.212768
Proc. SPIE 2512, ZEP resist process for high-accuracy photomask with a dry-etching capability, 0000 (3 July 1995); doi: 10.1117/12.212779
Proc. SPIE 2512, Photomask blanks enhancement for the laser reticle writer, 0000 (3 July 1995); doi: 10.1117/12.212790
Proc. SPIE 2512, Sizing the next generation of optical photomasks, 0000 (3 July 1995); doi: 10.1117/12.212801
Proc. SPIE 2512, Photomask cleaning for high-density and embedded PSM, 0000 (3 July 1995); doi: 10.1117/12.212811
Proc. SPIE 2512, Pellicle vs. influence of clean-room environments, 0000 (3 July 1995); doi: 10.1117/12.212814
X-Ray Mask Metrology and Equipment
Proc. SPIE 2512, Amorphous stuctured Ta4B absorber on SiC membrane for x-ray mask, 0000 (3 July 1995); doi: 10.1117/12.212815
Proc. SPIE 2512, Consideration of chemical bond configurations for radiation-hard UHV ECR-CVD SiNx x-ray mask membrane, 0000 (3 July 1995); doi: 10.1117/12.212758
Proc. SPIE 2512, Reflection masks for soft x-ray projection lithography, 0000 (3 July 1995); doi: 10.1117/12.212759
Equipment and Metrology
Proc. SPIE 2512, Mask metrology system XY-5i for 256-Mbit DRAM, 0000 (3 July 1995); doi: 10.1117/12.212760
Proc. SPIE 2512, Electrical characterization of across-field lithographic performance for 256-Mbit DRAM technologies, 0000 (3 July 1995); doi: 10.1117/12.212761
Proc. SPIE 2512, Ultrahigh-precision metrology on masks for 0.25 um device generation, 0000 (3 July 1995); doi: 10.1117/12.212762
Proc. SPIE 2512, Development of EB lithography system for next generation photomasks, 0000 (3 July 1995); doi: 10.1117/12.212763
Proc. SPIE 2512, Performance improvement in electron-beam reticle writing system, 0000 (3 July 1995); doi: 10.1117/12.212764
Photomask Process and Materials
Proc. SPIE 2512, Application of chemically amplified resists to photomask fabrication, 0000 (3 July 1995); doi: 10.1117/12.212765
Proc. SPIE 2512, Methods of error source identification and process optimization for photomask manufacturing, 0000 (3 July 1995); doi: 10.1117/12.212766
Proc. SPIE 2512, Pellicles designed for high-performance lithographic processes, 0000 (3 July 1995); doi: 10.1117/12.212767
Equipment and Metrology
Proc. SPIE 2512, ZBA31: an advanced mask writer meeting the demands of the 1-gigabit DRAM generation, 0000 (3 July 1995); doi: 10.1117/12.212769
X-Ray Mask Metrology and Equipment
Proc. SPIE 2512, Mask-holding mechanism for an e-beam x-ray mask writer, 0000 (3 July 1995); doi: 10.1117/12.212770
Proc. SPIE 2512, High-precision EB technology with thin EB resist and distortion-free mask holder for x-ray mask fabrication, 0000 (3 July 1995); doi: 10.1117/12.212771
Proc. SPIE 2512, One-point wafer bonding for highly accurate x-ray masks, 0000 (3 July 1995); doi: 10.1117/12.212772
Proc. SPIE 2512, Study of SiC x-ray mask distortion induced by backetching receding subtractive fabrication process, 0000 (3 July 1995); doi: 10.1117/12.212773
Proc. SPIE 2512, X-ray mask fabrication process, 0000 (3 July 1995); doi: 10.1117/12.212774
Proc. SPIE 2512, Repairing x-ray masks with Ta absorbers using focused ion beams, 0000 (3 July 1995); doi: 10.1117/12.212775
Equipment and Metrology
Proc. SPIE 2512, Reticle flexure influence on pattern positioning accuracy for reticle writing, 0000 (3 July 1995); doi: 10.1117/12.212776
Proc. SPIE 2512, Analysis of pattern shift error for mask clamping measured by Nikon XY-31, 0000 (3 July 1995); doi: 10.1117/12.212777
Proc. SPIE 2512, Comprehensive metrology-detection strategies for sub-0.5um lithography reticles, 0000 (3 July 1995); doi: 10.1117/12.212778
Proc. SPIE 2512, Evaluation of CD metrology tools for photomasks for 0.25-um devices, 0000 (3 July 1995); doi: 10.1117/12.212780
Phase-Shift Mask and Optical Proximity Correction
Proc. SPIE 2512, 248-nm DUV MoSiON embedded phase-shifting mask for 0.25 micrometer lithography, 0000 (3 July 1995); doi: 10.1117/12.212781
Proc. SPIE 2512, Development and evaluation of chromium-based attenuated phase-shift masks for DUV exposure, 0000 (3 July 1995); doi: 10.1117/12.212782
Proc. SPIE 2512, Development of a W/Si thin film for the single-layered attenuated phase-shifting mask for 248-nm lithography, 0000 (3 July 1995); doi: 10.1117/12.212783
Proc. SPIE 2512, Lithographic performance of SiNx single-layer halftone mask, 0000 (3 July 1995); doi: 10.1117/12.212784
Proc. SPIE 2512, Quality control of embedded-type phase-shift mask, 0000 (3 July 1995); doi: 10.1117/12.212785
Proc. SPIE 2512, Application of phase-shift mask to GaAs IC fabrication process, 0000 (3 July 1995); doi: 10.1117/12.212786
Proc. SPIE 2512, Sub 0.1 um ArF excimer laser lithography with alternating phase-shifting masks, 0000 (3 July 1995); doi: 10.1117/12.212787
Proc. SPIE 2512, Dependency of side-lobe effect of half-tone phase-shift mask on substrate material and topology and its solutions, 0000 (3 July 1995); doi: 10.1117/12.212788
Inspection, Repair, Design Automation, and Management
Proc. SPIE 2512, EB proximity effect correction system for 0.25-um device reticle fabrication, 0000 (3 July 1995); doi: 10.1117/12.212789
Proc. SPIE 2512, High-speed mask EB graphical image browser, 0000 (3 July 1995); doi: 10.1117/12.212791
Proc. SPIE 2512, Optical proximity correction for super-resolution technique, 0000 (3 July 1995); doi: 10.1117/12.212792
Proc. SPIE 2512, Investigation and improvement of patterning characteristics for annular illumination optical lithography at the periodical pattern ends, 0000 (3 July 1995); doi: 10.1117/12.212793
Proc. SPIE 2512, Printability of laser mask repairs at deep UV, 0000 (3 July 1995); doi: 10.1117/12.212794
Proc. SPIE 2512, Die-to-database defect detection for reticles of 64- and 256-Mbit DRAMs, 0000 (3 July 1995); doi: 10.1117/12.212795
Proc. SPIE 2512, Current technological status of spatial filtering method for soft defect detection, 0000 (3 July 1995); doi: 10.1117/12.212796
Proc. SPIE 2512, Mask-/reticle-making control system, 0000 (3 July 1995); doi: 10.1117/12.212797
Equipment and Metrology
Proc. SPIE 2512, Advanced mask fabrication system, 0000 (3 July 1995); doi: 10.1117/12.212798
Phase-Shift Mask and Optical Proximity Correction
Proc. SPIE 2512, Recent advances in mask making technology at AT&T, 0000 (3 July 1995); doi: 10.1117/12.212799
Proc. SPIE 2512, Phase-shifting masks for giga-scale ULSI, 0000 (3 July 1995); doi: 10.1117/12.212800
Proc. SPIE 2512, Evaluation of shifter edge shape on attenuated phase-shifting mask, 0000 (3 July 1995); doi: 10.1117/12.212802
Proc. SPIE 2512, New phase-shifting mask technology for quarter-micron photolithography, 0000 (3 July 1995); doi: 10.1117/12.212803
Proc. SPIE 2512, Fast-resist image estimation methodology using light-intensity distribution, 0000 (3 July 1995); doi: 10.1117/12.212804
Inspection, Repair, Design Automation, and Management
Proc. SPIE 2512, State of the art in focused ion-beam mask repair systems, 0000 (3 July 1995); doi: 10.1117/12.212805
Proc. SPIE 2512, New technique for repairing opaque defects, 0000 (3 July 1995); doi: 10.1117/12.212806
Proc. SPIE 2512, SEMI standards programmed defect masks and their applications for defect inspection, 0000 (3 July 1995); doi: 10.1117/12.212807
Proc. SPIE 2512, Effect of off-axis illumination on the printability of opaque and transparent reticle defects, 0000 (3 July 1995); doi: 10.1117/12.212808
Proc. SPIE 2512, Fully automated mask/reticle production factory, 0000 (3 July 1995); doi: 10.1117/12.212809
Proc. SPIE 2512, Preliminary methodology investigation of mask pattern fidelity for 250-nm design rules, 0000 (3 July 1995); doi: 10.1117/12.212810
Proc. SPIE 2512, Integrated reviewing system for defect inspection, 0000 (3 July 1995); doi: 10.1117/12.212812