PROCEEDINGS VOLUME 2635
MICROELECTRONIC MANUFACTURING '95 | 25-27 OCTOBER 1995
Microelectronic Manufacturing Yield, Reliability, and Failure Analysis
IN THIS VOLUME

0 Sessions, 31 Papers, 0 Presentations
MICROELECTRONIC MANUFACTURING '95
25-27 October 1995
Austin, TX, United States
Yield Improvement
Proc. SPIE 2635, Process equipment particle control for yield improvement, 0000 (22 September 1995); doi: 10.1117/12.221433
Proc. SPIE 2635, Yield improvement by wafer edge engineering, 0000 (22 September 1995); doi: 10.1117/12.221443
Poster Session
Proc. SPIE 2635, Reduction of post develop residue using optimal developer chemistry and develop/rinse processes, 0000 (22 September 1995); doi: 10.1117/12.221453
Yield Improvement
Proc. SPIE 2635, TiW particle control for VLSI manufacturing, 0000 (22 September 1995); doi: 10.1117/12.221458
Proc. SPIE 2635, Die cost analysis through defect reduction for wafer fab equipment, 0000 (22 September 1995); doi: 10.1117/12.221459
Proc. SPIE 2635, Meeting advanced pattern inspection system requirements for 0.25-um technology and beyond, 0000 (22 September 1995); doi: 10.1117/12.221460
Proc. SPIE 2635, Manufacturing reliability and yield optimization of GaAs MMICs, 0000 (22 September 1995); doi: 10.1117/12.221461
Proc. SPIE 2635, Particle contamination within the tungsten etch back chamber, 0000 (22 September 1995); doi: 10.1117/12.221462
Proc. SPIE 2635, Modeling of defect size distribution in yield forecasting, 0000 (22 September 1995); doi: 10.1117/12.221463
Proc. SPIE 2635, Comparison of simulated and experimental CD-limited yield for a submicron i-line process, 0000 (22 September 1995); doi: 10.1117/12.221434
Reliability (Failure Modes)
Proc. SPIE 2635, Negative bias-temperature instability study of silicon oxide and its impact on PMOS reliability, 0000 (22 September 1995); doi: 10.1117/12.221436
Proc. SPIE 2635, Correlation between space charge created by Fowler-Nordheim electron injections and charge to breakdown (QBD) of gate oxides in MOS capacitors: modeling and experiment, 0000 (22 September 1995); doi: 10.1117/12.221437
Poster Session
Proc. SPIE 2635, Mismatch drift failure of long channel n-MOSFETs caused by substrate hot-electron effect, 0000 (22 September 1995); doi: 10.1117/12.221438
Reliability (Failure Modes)
Proc. SPIE 2635, Linewidth influence on electromigration tests at wafer level on TiN/AlCu/TiN/Ti metal lines, 0000 (22 September 1995); doi: 10.1117/12.221439
Proc. SPIE 2635, Highly reliable CVD-stacked oxynitride gate dielectric fabricated by in-situ rapid thermal multiprocessing, 0000 (22 September 1995); doi: 10.1117/12.221440
Poster Session
Proc. SPIE 2635, Laser heterostructures reliability analysis by recombination parameter of cleaved <110> surfaces, 0000 (22 September 1995); doi: 10.1117/12.221441
Reliability (Manufacturing)
Proc. SPIE 2635, Role of SOG and oxynitride passivation in the field inversion of CMOS circuits, 0000 (22 September 1995); doi: 10.1117/12.221442
Proc. SPIE 2635, Prevention of auto-doping-induced threshold voltage shifts, 0000 (22 September 1995); doi: 10.1117/12.221444
Proc. SPIE 2635, Temperature and current density distributions in via structures with inhomogenous step coverages, 0000 (22 September 1995); doi: 10.1117/12.221445
Proc. SPIE 2635, Effects of various RIE process-induced damages on MOSFET characteristics, 0000 (22 September 1995); doi: 10.1117/12.221446
Proc. SPIE 2635, Solving production process challenges with wafer-level reliability techniques, 0000 (22 September 1995); doi: 10.1117/12.221447
Failure Analysis
Proc. SPIE 2635, Advanced FIB applications for product analysis, 0000 (22 September 1995); doi: 10.1117/12.221448
Proc. SPIE 2635, Validating IC early-failure simulation, 0000 (22 September 1995); doi: 10.1117/12.221449
Proc. SPIE 2635, Radiation damages in semiconductors tested by exoelectron spectroscopy, 0000 (22 September 1995); doi: 10.1117/12.221450
Process Enhancement
Proc. SPIE 2635, Process design for manufacturability of GaAs MESFET integrated circuit using statistical experimental design techniques, 0000 (22 September 1995); doi: 10.1117/12.221451
Proc. SPIE 2635, Fine pitch thermosonic wire bonding: analysis of state-of-the-art manufacturing capability, 0000 (22 September 1995); doi: 10.1117/12.221452
Proc. SPIE 2635, In-situ Si wafer temperature measuring using pulse modulated infrared laser interferometric thermometry for CVD film deposition, 0000 (22 September 1995); doi: 10.1117/12.221454
Proc. SPIE 2635, Material processing and advanced well structures using high-energy implantation for EPI replacement, 0000 (22 September 1995); doi: 10.1117/12.221455
Proc. SPIE 2635, Degradation of thin Si02 sidewall spacers during selective epitaxial growth for the fabrication of raised source/drain MOSFETs, 0000 (22 September 1995); doi: 10.1117/12.221456
Poster Session
Proc. SPIE 2635, Process-induced damage to SRAM poly-load resistance during photoresist ashing in H2O plasma, 0000 (22 September 1995); doi: 10.1117/12.221457
Plenary Paper
Proc. SPIE 2635, Manufacturing challenges for sub-half micron technologies, 0000 (22 September 1995); doi: 10.1117/12.221435
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