PROCEEDINGS VOLUME 2638
MICROELECTRONIC MANUFACTURING '95 | 25-27 OCTOBER 1995
Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing II
IN THIS VOLUME

0 Sessions, 29 Papers, 0 Presentations
MICROELECTRONIC MANUFACTURING '95
25-27 October 1995
Austin, TX, United States
Process Diagnostics
Proc. SPIE 2638, Investigation of metal contamination by photocurrent measurements: validation and application to ion implantation processes, 0000 (18 September 1995); doi: 10.1117/12.221187
Proc. SPIE 2638, Evaluation of contaminant-induced charge from oxide chemical-mechanical polish, 0000 (18 September 1995); doi: 10.1117/12.221196
Proc. SPIE 2638, Advanced optical characterization techniques for borophosphosilicate films, 0000 (18 September 1995); doi: 10.1117/12.221205
Advanced Techniques
Proc. SPIE 2638, Scanning photon microscope based on ac surface photovoltage: applications to nondestructive evaluation of metallic contaminants in silicon wafers, 0000 (18 September 1995); doi: 10.1117/12.221211
Proc. SPIE 2638, Advances in infrared spectroscopic methods for epitaxial film characterization, 0000 (18 September 1995); doi: 10.1117/12.221212
Proc. SPIE 2638, Multiparameter process metrology using scatterometry, 0000 (18 September 1995); doi: 10.1117/12.221213
Proc. SPIE 2638, Energy spectra of electrons emitted from samples with an internal electric field, 0000 (18 September 1995); doi: 10.1117/12.221214
Bulk and Surface Analysis
Proc. SPIE 2638, Oxygen precipitation and denuded zone characterization with ELYMAT technique, 0000 (18 September 1995); doi: 10.1117/12.221215
Proc. SPIE 2638, Novel evaluation method of silicon epitaxial layer lifetimes by photoluminescence technique, 0000 (18 September 1995); doi: 10.1117/12.221188
Proc. SPIE 2638, Influence of oxygen-iron interaction on the external gettering of Fe in p-Si by polycrystalline silicon film, 0000 (18 September 1995); doi: 10.1117/12.221189
Proc. SPIE 2638, TD formation in CZ-silicon annealed at 450 degrees C in air ambient, 0000 (18 September 1995); doi: 10.1117/12.221190
Advanced Ellipsometry and Reflectometry
Proc. SPIE 2638, Ellipsometric characterization techniques for Si processing technologies, 0000 (18 September 1995); doi: 10.1117/12.221191
Proc. SPIE 2638, Use of beam profile reflectometry to determine depth of silicon etch damage and contamination, 0000 (18 September 1995); doi: 10.1117/12.221192
Proc. SPIE 2638, Advanced ellipsometry for very thin films and multilayers, 0000 (18 September 1995); doi: 10.1117/12.221193
Process Diagnostics
Proc. SPIE 2638, Surface photovoltage analysis of iron contamination in silicon processing and the relation to gate oxide integrity, 0000 (18 September 1995); doi: 10.1117/12.221194
Proc. SPIE 2638, Oxide charging induced by electron exposure in ion implant, 0000 (18 September 1995); doi: 10.1117/12.221195
Proc. SPIE 2638, Optical characterization of surface damage of silicon wafers caused by plasma cleaning, 0000 (18 September 1995); doi: 10.1117/12.221197
Interconnects and Imaging
Proc. SPIE 2638, Performance optimization of three-dimensional optoelectronic interconnection for intra-multi-chip-module clock signal distribution, 0000 (18 September 1995); doi: 10.1117/12.221198
Proc. SPIE 2638, Influence of shape of the illumination aperture on the intrafield image displacement, 0000 (18 September 1995); doi: 10.1117/12.221199
Proc. SPIE 2638, Polygonal gratings for wafer scale one-to-many optical clock signal distribution, 0000 (18 September 1995); doi: 10.1117/12.221200
Bulk and Surface Analysis
Proc. SPIE 2638, Optical characterization of power devices, 0000 (18 September 1995); doi: 10.1117/12.221201
Proc. SPIE 2638, Optical characterization of surface effects from Cu-contaminated SiO2/Si interfaces, 0000 (18 September 1995); doi: 10.1117/12.221202
Proc. SPIE 2638, In-situ wafer contamination detection through rf-PCD Measurements, 0000 (18 September 1995); doi: 10.1117/12.221203
Proc. SPIE 2638, Evaluation of near-surface microdefects in Czochralski-Si wafers after a CMOS process by an infrared interference method, 0000 (18 September 1995); doi: 10.1117/12.221204
Laser Scanning
Proc. SPIE 2638, Light scattering from patterned surfaces and particles on surfaces, 0000 (18 September 1995); doi: 10.1117/12.221206
Proc. SPIE 2638, New laser scanning techniques for wafer inspection, 0000 (18 September 1995); doi: 10.1117/12.221207
Process Diagnostics
Proc. SPIE 2638, Optical studies of fluorocarbon film formation by a high-density plasma etcher, 0000 (18 September 1995); doi: 10.1117/12.221208
Interconnects and Imaging
Proc. SPIE 2638, Package and module substrate interconnect evaluation by thermal time domain reflectometry (TTDR), 0000 (18 September 1995); doi: 10.1117/12.221209
Plenary Paper
Proc. SPIE 2638, Manufacturing challenges for sub-half micron technologies, 0000 (18 September 1995); doi: 10.1117/12.221210
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