PROCEEDINGS VOLUME 2648
INTERNATIONAL CONFERENCE ON OPTICAL DIAGNOSTICS OF MATERIALS AND DEVICES FOR OPTO-, MICRO-, AND QUANTUM ELECTRONICS | 11-13 MAY 1995
International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics
INTERNATIONAL CONFERENCE ON OPTICAL DIAGNOSTICS OF MATERIALS AND DEVICES FOR OPTO-, MICRO-, AND QUANTUM ELECTRONICS
11-13 May 1995
Kiev, Ukraine
Absorption and Reflection Spectroscopy
Proc. SPIE 2648, Cavity electrodynamics in real experiments, 0000 (3 November 1995); doi: 10.1117/12.226126
Proc. SPIE 2648, Roughness effects in the infrared reflectance of thick 3C-SiC films grown on Si substrates, 0000 (3 November 1995); doi: 10.1117/12.226154
Proc. SPIE 2648, Optical hysteresis and nonlinear light absorption in a-Si:H and a-SiC:H thin films, 0000 (3 November 1995); doi: 10.1117/12.226165
Proc. SPIE 2648, Optical properties of CdS nanoclusters incorporated in zeolite structures, 0000 (3 November 1995); doi: 10.1117/12.226176
Proc. SPIE 2648, Analytical method for determination of absorbing film optical constants and thickness from reflectance spectra, 0000 (3 November 1995); doi: 10.1117/12.226187
Proc. SPIE 2648, Optical absorption and thermal expansion of semiconductor glasses As-S-Ge by topological transition, 0000 (3 November 1995); doi: 10.1117/12.226198
Proc. SPIE 2648, Developing a new method of the optical diagnostics materials for opto-, micro-, and quantum electronics based on semiconductor superlattices, 0000 (3 November 1995); doi: 10.1117/12.226209
Proc. SPIE 2648, Experimental evidence of the Coulomb interaction effects in CdS1-xSex quantum dots, 0000 (3 November 1995); doi: 10.1117/12.226220
Proc. SPIE 2648, Determination of technological process-induced variations of silicon recombination parameters by infrared and microwave absorption, 0000 (3 November 1995); doi: 10.1117/12.226231
Proc. SPIE 2648, Determining optical constants of thin film on substrate from transmission and reflection data, 0000 (3 November 1995); doi: 10.1117/12.226127
Proc. SPIE 2648, New photoacoustic mean for the determination of surface recombination velocity in piezocrystals, 0000 (3 November 1995); doi: 10.1117/12.226138
Proc. SPIE 2648, Use of physical criteria for solving equations of effective medium approximation (EMA), 0000 (3 November 1995); doi: 10.1117/12.226146
Proc. SPIE 2648, Ambipolar diffusion length measurements in a-Si:H by constant photocurrent method (CPM), 0000 (3 November 1995); doi: 10.1117/12.226147
Proc. SPIE 2648, Spectral diagnostics of laser erosion plasma of mercury chalcogenide targets, 0000 (3 November 1995); doi: 10.1117/12.226148
Proc. SPIE 2648, Surface polaritons in semiconductor films with depletion regions, 0000 (3 November 1995); doi: 10.1117/12.226149
Proc. SPIE 2648, Reconstruction of fundamental absorption spectra of material by its refractive index spectrum in transparency region, 0000 (3 November 1995); doi: 10.1117/12.226150
Proc. SPIE 2648, Determination of polarizability and surface concentration of biomolecules using surface plasmon resonance experiment, 0000 (3 November 1995); doi: 10.1117/12.226151
Proc. SPIE 2648, Optical constants of semiconductors above the fundamental edge, 0000 (3 November 1995); doi: 10.1117/12.226152
Proc. SPIE 2648, Optical properties and structure of ion-implanted metal films on crystalline lithium niobate, 0000 (3 November 1995); doi: 10.1117/12.226153
Proc. SPIE 2648, Far-infrared spectroscopy of polar semiconductor superlattices (GaAs-GaPxAs1-x), 0000 (3 November 1995); doi: 10.1117/12.226155
Proc. SPIE 2648, Application of surface plasmon resonance for the investigation of ultrathin metal films, 0000 (3 November 1995); doi: 10.1117/12.226156
Proc. SPIE 2648, Inverse problem solution in ellipsometry, 0000 (3 November 1995); doi: 10.1117/12.226157
Proc. SPIE 2648, Excitonic spectra of ternary compounds on the basis of AgI, 0000 (3 November 1995); doi: 10.1117/12.226158
Proc. SPIE 2648, Investigation of thin films of high- and low-absorbing substances by the method of spectroellipsometry with excitation of surface polaritons, 0000 (3 November 1995); doi: 10.1117/12.226159
Proc. SPIE 2648, Optical characterization of the structure of SIPOS layers, 0000 (3 November 1995); doi: 10.1117/12.226160
Proc. SPIE 2648, Complex method for the determination of thin absorptive film parameters, 0000 (3 November 1995); doi: 10.1117/12.226161
Proc. SPIE 2648, Intracavity titanium laser spectroscopy with controlled sensitivity, 0000 (3 November 1995); doi: 10.1117/12.226162
Proc. SPIE 2648, Investigation of photolysis and photochemical transformations in metal layer halides with optical methods, 0000 (3 November 1995); doi: 10.1117/12.226163
Proc. SPIE 2648, Optical test method of HTSC structures for creating miniature elements and devices for the optical-instrument-building industry, 0000 (3 November 1995); doi: 10.1117/12.226164
Proc. SPIE 2648, Kramers-Kronig relations failure in the presence of additional light waves, 0000 (3 November 1995); doi: 10.1117/12.226166
Interferometry and Nonlinear Optics Methods
Proc. SPIE 2648, Application of laser-induced gratings for heat-transfer study of solids, 0000 (3 November 1995); doi: 10.1117/12.226167
Proc. SPIE 2648, Enhancement of light diffraction efficiency in semiconductors by microwave electric field: experiment and calculations, 0000 (3 November 1995); doi: 10.1117/12.226168
Proc. SPIE 2648, Determination of profile parameters of planar waveguides, 0000 (3 November 1995); doi: 10.1117/12.226169
Proc. SPIE 2648, Nonlinear absorption of laser pulses in amorphous and crystalline As2S3 thin films, 0000 (3 November 1995); doi: 10.1117/12.226170
Proc. SPIE 2648, Nondestructive characterization of porous silicon structures by transient grating technique, 0000 (3 November 1995); doi: 10.1117/12.226171
Proc. SPIE 2648, Optical nonlinearities in GaAs at EL2 quenching by short laser pulses, 0000 (3 November 1995); doi: 10.1117/12.226172
Proc. SPIE 2648, Nonlinear and interferometric optical methods of diagnostics of semiconductors, 0000 (3 November 1995); doi: 10.1117/12.226173
Proc. SPIE 2648, Displacement interferometer of cylindrical information carrier, 0000 (3 November 1995); doi: 10.1117/12.226174
Proc. SPIE 2648, Determination of temperature changes of refractive index and thickness of material in one optical interference experiment, 0000 (3 November 1995); doi: 10.1117/12.226175
Proc. SPIE 2648, Diagnostics of glassy semiconductors by nonlinear absorptive methods, 0000 (3 November 1995); doi: 10.1117/12.226177
Proc. SPIE 2648, Four-wave mixing due to ionization of vapor, 0000 (3 November 1995); doi: 10.1117/12.226178
Proc. SPIE 2648, Utilization of noncritical phase matchings for creation of nonlinear optical frequency converters, 0000 (3 November 1995); doi: 10.1117/12.226179
Luminescent Methods
Proc. SPIE 2648, Photoluminescence diagnostic of semi-insulating materials for ion-implanted and quantum-size structures on gallium-arsenide-based micro-, opto-, and quantum electronics devices, 0000 (3 November 1995); doi: 10.1117/12.226180
Proc. SPIE 2648, Anomalies of light and sound generation in photoexcited porous silicon, 0000 (3 November 1995); doi: 10.1117/12.226181
Proc. SPIE 2648, Pecularities of recombination processes in injection lasers based on (In,Ga)As quantum dots leading to the single longitudinal mode operation at room temperature, 0000 (3 November 1995); doi: 10.1117/12.226182
Proc. SPIE 2648, Application of the polarized photoluminescence method to the characterization of superlattice corrugations, 0000 (3 November 1995); doi: 10.1117/12.226183
Proc. SPIE 2648, New method and calculation program to determine life-time of inhomogeneously broadened transitions, 0000 (3 November 1995); doi: 10.1117/12.226184
Proc. SPIE 2648, Photoluminescent and infrared Fourier diagnostics of porous silicon exposed to HF destructive etching, 0000 (3 November 1995); doi: 10.1117/12.226185
Proc. SPIE 2648, Structural morphology features and photoluminescence spectroscopy of IR-photosensitive HgCdTe/CdTe, 0000 (3 November 1995); doi: 10.1117/12.226186
Proc. SPIE 2648, Ultra-short-pulse nature of superradiation in injection emitters, 0000 (3 November 1995); doi: 10.1117/12.226188
Proc. SPIE 2648, Photoluminescence and x-ray studies of thin layers down to single quantum wells, 0000 (3 November 1995); doi: 10.1117/12.226189
Proc. SPIE 2648, Photoluminescence controls as-grown porous silicon-air interaction, 0000 (3 November 1995); doi: 10.1117/12.226190
Proc. SPIE 2648, Cathodoluminescent characteristics and light technical parameters of thin-film screens based on oxides and oxysulfides of rare-earth elements, 0000 (3 November 1995); doi: 10.1117/12.226191
Proc. SPIE 2648, Establishment of admixtures of heavy and rare-earth elements in cadmium tungstate on luminescence spectra, 0000 (3 November 1995); doi: 10.1117/12.226192
Proc. SPIE 2648, Influence of impurities and thermal treatment temperature on the spectral properties of the chromate luminophors, 0000 (3 November 1995); doi: 10.1117/12.226193
Proc. SPIE 2648, Luminescent express method for diagnostics of inhomogeneities in semiconductors, 0000 (3 November 1995); doi: 10.1117/12.226194
Proc. SPIE 2648, Quantum-well-laser mirror degradation investigated by microprobe optical spectroscopy, 0000 (3 November 1995); doi: 10.1117/12.226195
Proc. SPIE 2648, Anomalies of photoacoustic response in CdS/Y-zeolite system, 0000 (3 November 1995); doi: 10.1117/12.226196
Proc. SPIE 2648, Complex diagnostic of CdTe after under-threshold laser irradiation by photoluminescence, photoconductivity, and electrophysical methods, 0000 (3 November 1995); doi: 10.1117/12.226197