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Effect of p-dopant positioning in low-threshold, InGaAs/GaAs/AlGaAs, MQW GRINSCH lasers with GaAs etch-stop layer for multiwavelength applications
Advanced epitaxial growth and device processing techniques for ultrahigh-speed (>40 GHz) directly modulated semiconductor lasers
Physics and materials issues behind the lifetime problem in semiconductor lasers and light-emitting diodes
InGaAs/Ga(Al)As and Al-free 980-nm pump laser diodes: electro-optical properties and reliability issues