PROCEEDINGS VOLUME 2685
PHOTONICS WEST '96 | 27 JANUARY - 2 FEBRUARY 1996
Photodetectors: Materials and Devices
PHOTONICS WEST '96
27 January - 2 February 1996
San Jose, CA, United States
HgCdTe Infrared Detectors
Proc. SPIE 2685, HgCdTe material properties and their influence on IR FPA performance, 0000 (12 April 1996); doi: 10.1117/12.237700
Proc. SPIE 2685, MBE-grown HgCdTe heterojunction structures for IR FPAs, 0000 (12 April 1996); doi: 10.1117/12.237708
Proc. SPIE 2685, Heteroepitaxy of CdTe on Si substrates in view of infrared and x-ray detection, 0000 (12 April 1996); doi: 10.1117/12.237710
Proc. SPIE 2685, Peculiarities of electrically active states generation in HgCdTe, 0000 (12 April 1996); doi: 10.1117/12.237711
Superlattice and Quantum Well Infrared Detectors
Proc. SPIE 2685, Superlattice IR detectors: a theoretical view, 0000 (12 April 1996); doi: 10.1117/12.237712
Proc. SPIE 2685, Optical absorption and photoresponse in fully quaternary p-type quantum well detectors, 0000 (12 April 1996); doi: 10.1117/12.237713
Uncooled Detectors
Proc. SPIE 2685, Advances in uncooled LWIR thermal sensors, 0000 (12 April 1996); doi: 10.1117/12.237691
Proc. SPIE 2685, 320 x 240 microbolometer focal plane array for uncooled applications, 0000 (12 April 1996); doi: 10.1117/12.237692
Proc. SPIE 2685, Sol-gel-derived lead and calcium lead titanate pyroelectric detectors on silicon MEMS structures, 0000 (12 April 1996); doi: 10.1117/12.237693
Proc. SPIE 2685, Sb-based infrared materials and photodetectors for the 3-5 and 8-12 um range, 0000 (12 April 1996); doi: 10.1117/12.237694
UV Photodectors
Proc. SPIE 2685, Semiconductor ultraviolet detectors, 0000 (12 April 1996); doi: 10.1117/12.237695
Proc. SPIE 2685, GaN, GaAlN, and AlN for use in UV detectors for astrophysics: an update, 0000 (12 April 1996); doi: 10.1117/12.237696
Proc. SPIE 2685, UV photodetectors based on AlxGa1-xN grown by MOCVD, 0000 (12 April 1996); doi: 10.1117/12.237697
Proc. SPIE 2685, UV/VIS photodetectors in wide-bandgap semiconductors: GaAs and polycrystalline diamond, 0000 (12 April 1996); doi: 10.1117/12.237698
MSM Photodectectors
Proc. SPIE 2685, Fabrication and performance characteristics of high-speed ion-implanted Si metal-semiconductor-metal photodetectors, 0000 (12 April 1996); doi: 10.1117/12.237699
Proc. SPIE 2685, Modeling high-speed MSM photodetectors, 0000 (12 April 1996); doi: 10.1117/12.237701
Proc. SPIE 2685, High-performance GaAs metal-semiconductor-metal photodetectors grown at intermediate temperatures, 0000 (12 April 1996); doi: 10.1117/12.237702
Proc. SPIE 2685, Liquid-phase epitaxial growth process of InGaAs on InP with rare-earth treatment, 0000 (12 April 1996); doi: 10.1117/12.237703
Novel Infrared Detectors
Proc. SPIE 2685, Suspended YBaCuO microstructures on CeO2/YSZ membranes for sensitive bolometers, 0000 (12 April 1996); doi: 10.1117/12.237704
Proc. SPIE 2685, Silicon-based resonant cavity detectors for long-wave infrared imaging, 0000 (12 April 1996); doi: 10.1117/12.237705
Other Concepts and Applications
Proc. SPIE 2685, Quantum well intersubband heterodyne infrared detection up to 82 GHz, 0000 (12 April 1996); doi: 10.1117/12.237706
Proc. SPIE 2685, Submillimeter spectroscopy of residual photoconductivity and magnetoresistance in PbSnTe(In), 0000 (12 April 1996); doi: 10.1117/12.237707
Proc. SPIE 2685, Simple computer analysis of InP and GaAs avalanche photodetectors using different ionization rate data, 0000 (12 April 1996); doi: 10.1117/12.237709
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