Growth and Characterization of Wide-Band-Gap Structures
Proc. SPIE 2693, Rapid growth of II-VI laser structures by compound-source molecular beam epitaxy, 0000 (1 May 1996); doi: 10.1117/12.238951
Proc. SPIE 2693, Growth of pseudomorphic ZnSSe on Te-terminated GaAs, 0000 (1 May 1996); doi: 10.1117/12.238958
Proc. SPIE 2693, Investigation of electrical properties and thermal stability of ohmic contacts to n-ZnSe for planar contacts on blue-green laser diodes, 0000 (1 May 1996); doi: 10.1117/12.238969
Proc. SPIE 2693, Electrical characterization of p-type Zn(Se,Te):N semiconductor layers, 0000 (1 May 1996); doi: 10.1117/12.238979
Wide-Band-Gap Semiconductor Devices
Proc. SPIE 2693, High-efficiency ZnCdSe/ZnSSe/ZnMgSSe green and blue light-emitting diodes, 0000 (1 May 1996); doi: 10.1117/12.238989
Proc. SPIE 2693, High-brightness blue/green LEDs and first III-V nitride-based laser diodes, 0000 (1 May 1996); doi: 10.1117/12.239000
Proc. SPIE 2693, Recent progress in AlGaN/GaN laser structures on 6H-SiC, 0000 (1 May 1996); doi: 10.1117/12.239007
Proc. SPIE 2693, Life tests and failure analysis of AlGaN/InGaN/GaN blue light-emitting diodes, 0000 (1 May 1996); doi: 10.1117/12.239012
Proc. SPIE 2693, Modeling and characterization of high-frequency high-power GaN/SiC HBTs operating at high temperature, 0000 (1 May 1996); doi: 10.1117/12.238942
Optical Properties of Wide-Band-Gap Semiconductors
Proc. SPIE 2693, Optical studies of epitaxial GaN-based materials, 0000 (1 May 1996); doi: 10.1117/12.238943
Proc. SPIE 2693, Analysis of impurity-related blue emission in Zn-doped GaN/InGaN/AlGaN double heterostructure, 0000 (1 May 1996); doi: 10.1117/12.238944
Proc. SPIE 2693, Optimization of active-layer and cavity design parameters for low-threshold GaN/AlGaN double-heterostructure diode lasers, 0000 (1 May 1996); doi: 10.1117/12.238945
Proc. SPIE 2693, Optical gain in ZnCdSe-ZnSe quantum well structures, 0000 (1 May 1996); doi: 10.1117/12.238946
Proc. SPIE 2693, Room temperature photo-pumped lasing action of ZnCdSe/ZnSe/ZnMgSSe double heterostructure grown by metal-organic chemical vapor deposition, 0000 (1 May 1996); doi: 10.1117/12.238947
New Developments in VCSEL Structures
Proc. SPIE 2693, Dynamic properties and performance of vertical cavity surface-emitting lasers in polarization-selective free-space optical links, 0000 (1 May 1996); doi: 10.1117/12.238948
Proc. SPIE 2693, Modeling and optimization of 1.54 um double-fused VCSELs for cw operation above room temperature, 0000 (1 May 1996); doi: 10.1117/12.238949
Physics of Microcavity Devices
Proc. SPIE 2693, Semiconductor microcavities in the strong coupling regime, 0000 (1 May 1996); doi: 10.1117/12.238950
Proc. SPIE 2693, High-Q photonic band gap resonant cavities: from mm-wave to optical regime, 0000 (1 May 1996); doi: 10.1117/12.238952
Proc. SPIE 2693, Role of carrier diffusion in semiconductor microdisc lasers, 0000 (1 May 1996); doi: 10.1117/12.238953
Proc. SPIE 2693, Quantum electrodynamic theory and modeling of light emission in vertical cavity devices, 0000 (1 May 1996); doi: 10.1117/12.238954
Optical and Electronic Properties of VCSELs
Proc. SPIE 2693, Transverse anisotropy and mode structure in VCSELs, 0000 (1 May 1996); doi: 10.1117/12.238955
Proc. SPIE 2693, Polarization state selection and switching in VCSELs, 0000 (1 May 1996); doi: 10.1117/12.238956
Quantum Effects in Nanostructures
Proc. SPIE 2693, Excitons, biexcitons, and stimulated emission in wide gap II-VI quantum wells, 0000 (1 May 1996); doi: 10.1117/12.238957
Proc. SPIE 2693, Quantum dots in the strong confinement regime: a model system for gain in quasi-zero-dimensional semiconductors, 0000 (1 May 1996); doi: 10.1117/12.238959
Proc. SPIE 2693, Propagation effects in semiconductor multiple quantum well structures, 0000 (1 May 1996); doi: 10.1117/12.238960
Optical Nonlinearities and Many-Body Effects I
Proc. SPIE 2693, Theory of non-Markovian optical gain in excited semiconductors, 0000 (1 May 1996); doi: 10.1117/12.238961
Proc. SPIE 2693, Observation of spectral hole sidebands in the gain region of an inverted semiconductor, 0000 (1 May 1996); doi: 10.1117/12.238962
Proc. SPIE 2693, Gain and propagation in quantum well amplifiers, 0000 (1 May 1996); doi: 10.1117/12.238963
Proc. SPIE 2693, Highly nondegenerate four-wave mixing in semiconductor laser amplifiers, 0000 (1 May 1996); doi: 10.1117/12.238964
Optical Nonlinearities and Many-Body Effects II
Proc. SPIE 2693, Energy loss by hot carriers in polar semiconductors, 0000 (1 May 1996); doi: 10.1117/12.238965
Proc. SPIE 2693, Exciton tunneling in wide-bandgap semiconductors, 0000 (1 May 1996); doi: 10.1117/12.238966
Proc. SPIE 2693, Ultrashort dynamic response of vertical cavity surface-emitting quantum well lasers, 0000 (1 May 1996); doi: 10.1117/12.238967
Proc. SPIE 2693, Greens functions theory for semiconductor quantum well laser spectra, 0000 (1 May 1996); doi: 10.1117/12.238968
Proc. SPIE 2693, Monte Carlo simulation of exciton states in spatially separated electron-hole system, 0000 (1 May 1996); doi: 10.1117/12.238970
Dynamics of Lasers and Laser Arrays
Proc. SPIE 2693, Carrier and photon dynamics in transversally asymmetric high-speed AlGaAs/InP MQW lasers, 0000 (1 May 1996); doi: 10.1117/12.238971
Proc. SPIE 2693, Spatiotemporal dynamics of gain-guided semiconductor laser arrays and broad-area arrays, 0000 (1 May 1996); doi: 10.1117/12.238972
Proc. SPIE 2693, Simulating carrier dynamics in quantum well lasers, 0000 (1 May 1996); doi: 10.1117/12.238973
Proc. SPIE 2693, Cavity length limitation of the crosscoupled mode bistability in a semiconductor laser, 0000 (1 May 1996); doi: 10.1117/12.238974
Proc. SPIE 2693, Numerical study of the effect of the nonlinear gain compression on the dynamic behavior of directly modulated semiconductor lasers, 0000 (1 May 1996); doi: 10.1117/12.238975
Physics and Simulation of Quantum-Confined Lasers
Proc. SPIE 2693, Optimization of semiconductor lasers for UHF modulation, 0000 (1 May 1996); doi: 10.1117/12.238976
Proc. SPIE 2693, Simulation of single-mode high-power semiconductor lasers, 0000 (1 May 1996); doi: 10.1117/12.238977
Proc. SPIE 2693, Modeling of optical spectra for characterization of multiquantum well InGaAsP-based lasers, 0000 (1 May 1996); doi: 10.1117/12.238978
New Techniques and Structures
Proc. SPIE 2693, Critical issues in laser diode calculations, 0000 (1 May 1996); doi: 10.1117/12.238980
Proc. SPIE 2693, Room-temperature contactless electromodulation investigation of wafer-sized quantum well laser structures, 0000 (1 May 1996); doi: 10.1117/12.238981
Proc. SPIE 2693, Polarization-dependent amplification in planar waveguides, 0000 (1 May 1996); doi: 10.1117/12.238982
Proc. SPIE 2693, Modeling and characterization of colliding pulse mode-locked (CPM) quantum well lasers, 0000 (1 May 1996); doi: 10.1117/12.238983
Passive Devices
Proc. SPIE 2693, Computer-aided engineering for integrated optics, 0000 (1 May 1996); doi: 10.1117/12.238984
Proc. SPIE 2693, Some recent advances in field propagation techniques, 0000 (1 May 1996); doi: 10.1117/12.238985
Proc. SPIE 2693, Analysis of stresses in GaAs waveguides integrated with ZnO thin films, 0000 (1 May 1996); doi: 10.1117/12.238986
Proc. SPIE 2693, Nonlinear optical waveguides based on polymeric films doped with phthalocyanines, 0000 (1 May 1996); doi: 10.1117/12.238987
High-Speed Semiconductor Lasers
Proc. SPIE 2693, Three-terminal laser structures for high-speed modulation using variable carrier heating, 0000 (1 May 1996); doi: 10.1117/12.238988
Proc. SPIE 2693, Monolithic passively mode-locked semiconductor lasers: theory and experiment, 0000 (1 May 1996); doi: 10.1117/12.238990
Proc. SPIE 2693, Ultrahigh-repetition frequency pulse generation in DFB lasers by cw light injection for long-haul OTDM fiber transmission, 0000 (1 May 1996); doi: 10.1117/12.238991
Proc. SPIE 2693, Suppression of multiple pulse formation in mode-locked laser diodes by gain quenching, 0000 (1 May 1996); doi: 10.1117/12.238992
Proc. SPIE 2693, Accurate modeling of relaxation oscillation in mixed-coupled distributed-feedback semiconductor lasers, 0000 (1 May 1996); doi: 10.1117/12.238993
Lasers for Optical Communications I
Proc. SPIE 2693, Influence of auger recombination on the temperature sensitivity of bulk and strained quantum well 1.3-um semiconductor lasers, 0000 (1 May 1996); doi: 10.1117/12.238994
Proc. SPIE 2693, Real-world distributed-feedback lasers: measured, modeled, and applied to CATV, 0000 (1 May 1996); doi: 10.1117/12.238995
Proc. SPIE 2693, Effect of p-doping profile on performance of strained multiquantum well InGaAsP/InP lasers, 0000 (1 May 1996); doi: 10.1117/12.238996