PROCEEDINGS VOLUME 2694
PHOTONICS WEST '96 | JAN 27 - FEB 2 1996
Quantum Well and Superlattice Physics VI
PHOTONICS WEST '96
Jan 27 - Feb 2 1996
San Jose, CA, United States
Novel Infrared Laser Structures and Intersubband Relaxation Mechanisms
Proc. SPIE 2694, GaInSb/InAs superlattice-based infrared lasers, 0000 (19 April 1996); doi: 10.1117/12.238382
Proc. SPIE 2694, Novel quantum cascade lasers based on type-II multiple quantum well heterostructures, 0000 (19 April 1996); doi: 10.1117/12.238392
Proc. SPIE 2694, Population inversion in asymmetrical step quantum wells and infrared intersubband lasers, 0000 (19 April 1996); doi: 10.1117/12.238403
Proc. SPIE 2694, Modeling of multiple quantum well lasers and study of the coupling effects between wells, 0000 (19 April 1996); doi: 10.1117/12.238404
Proc. SPIE 2694, Bandfilling and bandgap shrinkage in the femtosecond spectroscopyof GaAs, 0000 (19 April 1996); doi: 10.1117/12.238405
Strained Quantum Well Optoelectronics and Microcavities
Proc. SPIE 2694, Strain-engineered semiconductor heterostructures for novel optoelectronic devices, 0000 (19 April 1996); doi: 10.1117/12.238383
Proc. SPIE 2694, Spin relaxation in GaAs multiple quantum wells: well-width dependence, 0000 (19 April 1996); doi: 10.1117/12.238384
Proc. SPIE 2694, High-wafer yield high-performance vertical cavity surface-emitting lasers, 0000 (19 April 1996); doi: 10.1117/12.238385
Proc. SPIE 2694, Tuning of the exciton-photon coupling in semiconductor quantum microcavities by external electric and magnetic fields, 0000 (19 April 1996); doi: 10.1117/12.238386
Proc. SPIE 2694, Waveguide effect in quantum well infrared photodetectors, 0000 (19 April 1996); doi: 10.1117/12.238387
Resonant Tunneling Devices
Proc. SPIE 2694, Resonant tunneling devices and circuits, 0000 (19 April 1996); doi: 10.1117/12.238388
Proc. SPIE 2694, Influence of double-barrier quantum well asymmetry on RTD switching time, 0000 (19 April 1996); doi: 10.1117/12.238389
Proc. SPIE 2694, Modeling of optically switched resonant tunneling diodes, 0000 (19 April 1996); doi: 10.1117/12.238390
Proc. SPIE 2694, Photocurrent anomaly in double-barrier quantum well structures, 0000 (19 April 1996); doi: 10.1117/12.238391
Proc. SPIE 2694, Impact of lattice mismatch on the electrical properties of AlAs/InGaAs/InAs resonant tunneling diodes, 0000 (19 April 1996); doi: 10.1117/12.238393
Proc. SPIE 2694, Transfer efficiency of guided electron waves in coupled quantum wells, 0000 (19 April 1996); doi: 10.1117/12.238394
Modulators and Quantum Dots
Proc. SPIE 2694, Optoelectronic integration of quantum well intersubband photodetectors for two-dimensional array fabrication, 0000 (19 April 1996); doi: 10.1117/12.238395
Proc. SPIE 2694, Fast electro-optic modulation with selectively contacted n-i-p-i structures, 0000 (19 April 1996); doi: 10.1117/12.238396
Proc. SPIE 2694, Fast MSM modulators based on the two-dimensional Franz-Keldysh effect in MQW structures, 0000 (19 April 1996); doi: 10.1117/12.238397
Proc. SPIE 2694, AlxGa1-xAs/AlyGa1-yAs multiple quantum well structures for visible wavelength optical modulator applications, 0000 (19 April 1996); doi: 10.1117/12.238398
Proc. SPIE 2694, Infrared photodetectors based on n-i-p-i InAs structures grown by MOCVD, 0000 (19 April 1996); doi: 10.1117/12.238399
Proc. SPIE 2694, Excited states in InAs self-assembled quantum dots, 0000 (19 April 1996); doi: 10.1117/12.238400
Proc. SPIE 2694, Interfacial chemistry in ZnS/Si and ZnSe/Si superlattices, 0000 (19 April 1996); doi: 10.1117/12.238401
Proc. SPIE 2694, Nonlinear effects in 2D electron gas in GaAs/GaAlAs heterostructures in millimeter range, 0000 (19 April 1996); doi: 10.1117/12.238402
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