PROCEEDINGS VOLUME 2724
SPIE'S 1996 INTERNATIONAL SYMPOSIUM ON MICROLITHOGRAPHY | 10-15 MARCH 1996
Advances in Resist Technology and Processing XIII
SPIE'S 1996 INTERNATIONAL SYMPOSIUM ON MICROLITHOGRAPHY
10-15 March 1996
Santa Clara, CA, United States
Plenary Papers
Proc. SPIE 2724, Patterning ULSI Circuits, 0000 (14 June 1996); doi: 10.1117/12.241809
Proc. SPIE 2724, University-industry relations: what do we do now?, 0000 (14 June 1996); doi: 10.1117/12.241820
Proc. SPIE 2724, Science and technolgy policy in the 104th Congress, 0000 (14 June 1996); doi: 10.1117/12.241830
Deep-UV Resist Processing
Proc. SPIE 2724, Lithographic performance of an environmentally stable chemically amplified photoresist (ESCAP), 0000 (14 June 1996); doi: 10.1117/12.241840
Proc. SPIE 2724, PED-stabilized chemically amplified photoresist, 0000 (14 June 1996); doi: 10.1117/12.241851
Proc. SPIE 2724, Quarter- and subquarter-micron deep-UV lithography with chemically amplified positive resist, 0000 (14 June 1996); doi: 10.1117/12.241861
Proc. SPIE 2724, Undercut elimination in DUV negative systems: application to lithography and etching of metal levels, 0000 (14 June 1996); doi: 10.1117/12.241870
Proc. SPIE 2724, Reduction of substrate dependency of chemically amplified resist, 0000 (14 June 1996); doi: 10.1117/12.241877
Proc. SPIE 2724, Free volume variations during exposure and PEB of DUV positive resists: effect on dissolution properties, 0000 (14 June 1996); doi: 10.1117/12.241878
Proc. SPIE 2724, Postexposure bake characterization and parameter extraction for positive deep-UV resists through broad-area exposure experiments, 0000 (14 June 1996); doi: 10.1117/12.241810
Proc. SPIE 2724, Substrate effects of silicon nitride on i-line and deep-UV lithography, 0000 (14 June 1996); doi: 10.1117/12.241811
Proc. SPIE 2724, Substrate effect in chemically amplified resist, 0000 (14 June 1996); doi: 10.1117/12.241812
Proc. SPIE 2724, Stable process for chemically amplified resists using a new adhesion promotor, 0000 (14 June 1996); doi: 10.1117/12.241813
Proc. SPIE 2724, Method of comparing chemical contrast with resist contrast, 0000 (14 June 1996); doi: 10.1117/12.241814
Deep-UV Resist Materials and Fundamentals
Proc. SPIE 2724, Design of high performance chemically amplified resist, 0000 (14 June 1996); doi: 10.1117/12.241815
Proc. SPIE 2724, Application of photodecomposable base concept to two-component deep-UV chemically amplified resists, 0000 (14 June 1996); doi: 10.1117/12.241816
Proc. SPIE 2724, Synthesis and lithographic performance of highly branched polymers from hydroxyphenylmethylcarbinols, 0000 (14 June 1996); doi: 10.1117/12.241817
Proc. SPIE 2724, Effect of substituent groups of phenol-derivative dissolution inhibitors on inhibition efficiency, 0000 (14 June 1996); doi: 10.1117/12.241818
Proc. SPIE 2724, Halation reduction for single-layer DUV resist processing, 0000 (14 June 1996); doi: 10.1117/12.241819
Proc. SPIE 2724, Acetal-based three-component CARs: a versatile concept to tailor optical properties of resists, 0000 (14 June 1996); doi: 10.1117/12.241821
Proc. SPIE 2724, Manipulation of the thermal properties of positive DUV polymers, 0000 (14 June 1996); doi: 10.1117/12.241822
Proc. SPIE 2724, Narrow polydispersity polymers for microlithography: synthesis and properties, 0000 (14 June 1996); doi: 10.1117/12.241823
Proc. SPIE 2724, Characterization of Shipley's positive deep-UV experimental resists: deblocking studies, 0000 (14 June 1996); doi: 10.1117/12.241824
Proc. SPIE 2724, Photosensitization in dyed and undyed APEX-E DUV resist, 0000 (14 June 1996); doi: 10.1117/12.241825
Proc. SPIE 2724, Chemically amplified negative-tone deep-UV photoresist based on poly(alkoxy styrenes) containing acetal groups, 0000 (14 June 1996); doi: 10.1117/12.241826
Proc. SPIE 2724, Completely water-processable and other chemically amplified resists from maleic anhydride copolymers, 0000 (14 June 1996); doi: 10.1117/12.241827
Proc. SPIE 2724, Novel main chain scission positive-tone photoresists for 248-nm lithography with wide post-exposure processing latitude as an alternative to chemically amplified systems, 0000 (14 June 1996); doi: 10.1117/12.241828
Proc. SPIE 2724, Negative-tone resist system using vinyl cyclic acetal crosslinker, 0000 (14 June 1996); doi: 10.1117/12.241829
Proc. SPIE 2724, Design and properties of new deep-UV positive photoresist, 0000 (14 June 1996); doi: 10.1117/12.241831
Materials for 193-nm Photoresists
Proc. SPIE 2724, Bilayer resist approach for 193-nm lithography, 0000 (14 June 1996); doi: 10.1117/12.241833
Proc. SPIE 2724, Evaluation of cycloolefin-maleic anhydride alternating copolymers as single-layer photoresists for 193-nm photolithography, 0000 (14 June 1996); doi: 10.1117/12.241834
Proc. SPIE 2724, Limits to etch resistance for 193-nm single-layer resists, 0000 (14 June 1996); doi: 10.1117/12.241835
Proc. SPIE 2724, Novel alkaline-soluble alicyclic polymer poly(TCDMACOOH) for ArF chemically amplified positive resists, 0000 (14 June 1996); doi: 10.1117/12.241836
Proc. SPIE 2724, Dissolution behavior of alicyclic polymers designed for ArF excimer laser lithography, 0000 (14 June 1996); doi: 10.1117/12.241837
Proc. SPIE 2724, TSI process performance in a transformer-coupled plasma dry develop tool, 0000 (14 June 1996); doi: 10.1117/12.241838
Proc. SPIE 2724, Block and random copolymer resists designed for 193-nm lithography and environmentally friendly supercritical CO2 development, 0000 (14 June 1996); doi: 10.1117/12.241839
Novolac/DNQ Resist Materials and Fundamentals
Proc. SPIE 2724, Effect of low-molecular-weight dissolution-promoting compounds in DNQ-novolac positive resist, 0000 (14 June 1996); doi: 10.1117/12.241841
Proc. SPIE 2724, Contrast-boosted resist using a polarity-change reaction during aqueous base development, 0000 (14 June 1996); doi: 10.1117/12.241842
Proc. SPIE 2724, Novel class of highly selective divanillin-based PACs, 0000 (14 June 1996); doi: 10.1117/12.241843
Proc. SPIE 2724, Bake mechanisms in novolak-based photoresist films: investigation by contact angle measurements, 0000 (14 June 1996); doi: 10.1117/12.241844
Proc. SPIE 2724, Selectively esterified novolac resins: a study of resist properties as a function of novolac molecular weight and composition, 0000 (14 June 1996); doi: 10.1117/12.241845
Proc. SPIE 2724, Factors affecting the dissolution rate of novolac resins II: developer composition effects, 0000 (14 June 1996); doi: 10.1117/12.241846
Proc. SPIE 2724, Diffusion limitations in high-resolution lithography, 0000 (14 June 1996); doi: 10.1117/12.241847
Proc. SPIE 2724, Application of DNQ-based microlithography to patterning bioactive molecules and cells, 0000 (14 June 1996); doi: 10.1117/12.241848
Proc. SPIE 2724, Lithographic characterization of AZ 7800 high-resolution photoresist, 0000 (14 June 1996); doi: 10.1117/12.241849
Proc. SPIE 2724, Diazonaphthoquinone-5-sulfonate composition variants: synthesis and properties, 0000 (14 June 1996); doi: 10.1117/12.241850
Proc. SPIE 2724, Standing waves reducing additives, 0000 (14 June 1996); doi: 10.1117/12.241852
Proc. SPIE 2724, Isolation of novolak resin at low temperature, 0000 (14 June 1996); doi: 10.1117/12.241853
Proc. SPIE 2724, Dissolution behavior of novolak resins, 0000 (14 June 1996); doi: 10.1117/12.241854
Electron Beam Resist, Resist Stripping, and Resist Hardening
Proc. SPIE 2724, High-performance TSI process for e-beam using vapor-applied crosslinking silylating agents, 0000 (14 June 1996); doi: 10.1117/12.241855
Proc. SPIE 2724, Evaluation of the dry resist octavinylsilsesquioxan and its application to three-dimensional electron-beam lithography, 0000 (14 June 1996); doi: 10.1117/12.241856
Proc. SPIE 2724, Deep-UV hardening of deep-UV resists, 0000 (14 June 1996); doi: 10.1117/12.241857
Proc. SPIE 2724, Excimer laser photoresist stripping, 0000 (14 June 1996); doi: 10.1117/12.241858
Proc. SPIE 2724, Negative resists for electron-beam lithography utilizing acid-catalyzed intramolecular dehydration of phenylcarbinol, 0000 (14 June 1996); doi: 10.1117/12.241859
Proc. SPIE 2724, Exposing of surface layers of PMMA structures by low-energy (1000-6000 eV) electron irradiation, 0000 (14 June 1996); doi: 10.1117/12.241860
Proc. SPIE 2724, Photoresist stabilization for ion implant processing, 0000 (14 June 1996); doi: 10.1117/12.241862