PROCEEDINGS VOLUME 2725
SPIE'S 1996 INTERNATIONAL SYMPOSIUM ON MICROLITHOGRAPHY | 10-15 MARCH 1996
Metrology, Inspection, and Process Control for Microlithography X
SPIE'S 1996 INTERNATIONAL SYMPOSIUM ON MICROLITHOGRAPHY
10-15 March 1996
Santa Clara, CA, United States
Modeling for Submicron Metrology
Proc. SPIE 2725, Patterning ULSI circuits, 0000 (21 May 1996); doi: 10.1117/12.240078
Proc. SPIE 2725, University-industry relations: what do we do now?, 0000 (21 May 1996); doi: 10.1117/12.240088
Proc. SPIE 2725, Science and technology policy in the 104th Congress, 0000 (21 May 1996); doi: 10.1117/12.240099
Proc. SPIE 2725, Resist metrology for lithography simulation, part I: exposure parameter measurements, 0000 (21 May 1996); doi: 10.1117/12.240109
Proc. SPIE 2725, Resist metrology for lithography simulation, part 2: development parameter measurements, 0000 (21 May 1996); doi: 10.1117/12.240120
Proc. SPIE 2725, Minimizing optical proximity effect at subhalf-micron resolution by the variation of stepper lens operating conditions at i-line, 248-nm, and 193-nm wavelengths, 0000 (21 May 1996); doi: 10.1117/12.240130
Standards and Calibration Methods for Critical Dimension Metrology
Proc. SPIE 2725, International comparison of photomask linewidth standards: United States (NIST) and United Kingdom (NPL), 0000 (21 May 1996); doi: 10.1117/12.240148
Proc. SPIE 2725, Self-calibration in two dimensions: the experiment, 0000 (21 May 1996); doi: 10.1117/12.240149
Proc. SPIE 2725, New algorithm for the measurement of pitch in metrology instruments, 0000 (21 May 1996); doi: 10.1117/12.240079
Proc. SPIE 2725, Linewidth measurement of wafers using SEM and its uncertainty evaluation, 0000 (21 May 1996); doi: 10.1117/12.240080
Proc. SPIE 2725, SEM characterization of etch and develop contributions to poly-CD error, 0000 (21 May 1996); doi: 10.1117/12.240081
Particle and Defect Metrology
Proc. SPIE 2725, Practical and precise method for mask defect size measurement, 0000 (21 May 1996); doi: 10.1117/12.240082
Proc. SPIE 2725, Comparison of particle measurement tools for use with photoresist: film surface versus liquid techniques, 0000 (21 May 1996); doi: 10.1117/12.240083
Proc. SPIE 2725, Image paradigm for semiconductor defect data reduction, 0000 (21 May 1996); doi: 10.1117/12.240084
Proc. SPIE 2725, Real-time on-wafer evaluation of contaminant-induced defects from resist processing, 0000 (21 May 1996); doi: 10.1117/12.240085
Proc. SPIE 2725, Using optical pattern filtering defect inspection tools and process-induced defects per wafer pass for process defect control, 0000 (21 May 1996); doi: 10.1117/12.240086
Proc. SPIE 2725, Defect detection methodology on the back-end process: a case study, 0000 (21 May 1996); doi: 10.1117/12.240087
Environmentally Responsible Process Control and Material Development
Proc. SPIE 2725, Managing environmentally benign semiconductor manufacturing research, 0000 (21 May 1996); doi: 10.1117/12.240089
Proc. SPIE 2725, Supercritical fluid processing: opportunities for new resist materials and processes, 0000 (21 May 1996); doi: 10.1117/12.240090
Proc. SPIE 2725, Removal of process-generated organic impurities from recycled water in semiconductor fabs, 0000 (21 May 1996); doi: 10.1117/12.240091
Proc. SPIE 2725, Water-soluble resist for environmentally friendly lithography, 0000 (21 May 1996); doi: 10.1117/12.240092
Registration and Overlay Metrology
Proc. SPIE 2725, High-accuracy overlay measurements, 0000 (21 May 1996); doi: 10.1117/12.240093
Proc. SPIE 2725, In-line overlay measurements for advanced photolithography, 0000 (21 May 1996); doi: 10.1117/12.240094
Proc. SPIE 2725, Improved overlay measurement of CMP processed layers, 0000 (21 May 1996); doi: 10.1117/12.240095
Proc. SPIE 2725, Improved overlay reading on MLR structures, 0000 (21 May 1996); doi: 10.1117/12.240096
Proc. SPIE 2725, Compensation of intrafield registration error caused by process properties in optical lithography, 0000 (21 May 1996); doi: 10.1117/12.240097
Proc. SPIE 2725, Accurate overlay control for 0.30-um i-line lithography, 0000 (21 May 1996); doi: 10.1117/12.240098
Proc. SPIE 2725, Real-time overlay modeling in a sub-0.50 um production environment using the IVS-100 optical metrology system, 0000 (21 May 1996); doi: 10.1117/12.240100
Proc. SPIE 2725, Efficient overlay optimization of stepper correctables, 0000 (21 May 1996); doi: 10.1117/12.240101
Proc. SPIE 2725, Effect of variable sigma aperture on lens distortion and its pattern size dependence, 0000 (21 May 1996); doi: 10.1117/12.240102
Particle and Defect Metrology
Proc. SPIE 2725, Rapid and accurate measurements of photoresist refractive index dispersion using the prism coupling method, 0000 (21 May 1996); doi: 10.1117/12.240103
Thin Film Analysis and Measurement
Proc. SPIE 2725, Optical characterization of ITO films used in flat panel displays, 0000 (21 May 1996); doi: 10.1117/12.240104
Scanning Probe Metrology
Proc. SPIE 2725, Improving SEM linewidth metrology by two-dimensional scanning force microscopy, 0000 (21 May 1996); doi: 10.1117/12.240106
Proc. SPIE 2725, SEM performance evaluation using the sharpness criterion, 0000 (21 May 1996); doi: 10.1117/12.240107
Proc. SPIE 2725, High-accuracy critical-dimension metrology using a scanning electron microscope, 0000 (21 May 1996); doi: 10.1117/12.240108
Proc. SPIE 2725, Nanometer-scale dimensional metrology with noncontact atomic force microscopy, 0000 (21 May 1996); doi: 10.1117/12.240110
Proc. SPIE 2725, Sub-0.35-um critical dimension metrology using atomic force microscopy, 0000 (21 May 1996); doi: 10.1117/12.240111
Proc. SPIE 2725, Critical dimension atomic force microscopy for 0.25-um process development, 0000 (21 May 1996); doi: 10.1117/12.240112
Proc. SPIE 2725, Measurement of a CD and sidewall angle artifact with two-dimensional CD AFM metrology, 0000 (21 May 1996); doi: 10.1117/12.240113
Optical and Electrical Linewidth Measurements
Proc. SPIE 2725, Application of a develop end point detector as a timely and cost-effective alternative to using an SEM for CD measurement in production photolithography, 0000 (21 May 1996); doi: 10.1117/12.240114
Proc. SPIE 2725, Linesize effects on UV reflectance spectra, 0000 (21 May 1996); doi: 10.1117/12.240115
Proc. SPIE 2725, Scanning optical microscope integrated in a wafer stepper for image sensing, 0000 (21 May 1996); doi: 10.1117/12.240116
Proc. SPIE 2725, Electrical test structures replicated in silicon-on-insulator material, 0000 (21 May 1996); doi: 10.1117/12.240117
Scatterometry for Versatile Applications
Proc. SPIE 2725, Photoresist metrology based on light scattering, 0000 (21 May 1996); doi: 10.1117/12.240118
Proc. SPIE 2725, Prediction of light scattering characteristics of particles and structures on surfaces by the coupled-dipole method, 0000 (21 May 1996); doi: 10.1117/12.240119
Proc. SPIE 2725, Multiparameter CD measurements using scatterometry, 0000 (21 May 1996); doi: 10.1117/12.240121
Proc. SPIE 2725, Scatterometric sensor for PEB process control, 0000 (21 May 1996); doi: 10.1117/12.240122
Lithographic Process Control/Process Monitoring
Proc. SPIE 2725, Lithography applications of the new Tencor Surfscan AIT laser-based defect inspection system, 0000 (21 May 1996); doi: 10.1117/12.240123
Proc. SPIE 2725, Improved mask metrology system for 1-Gb DRAM, 0000 (21 May 1996); doi: 10.1117/12.240124
Proc. SPIE 2725, Spectroscopic multilayer film thickness measurement system, 0000 (21 May 1996); doi: 10.1117/12.240125
Proc. SPIE 2725, Automated technique for optimizing stepper focus control, 0000 (21 May 1996); doi: 10.1117/12.240126
Proc. SPIE 2725, Performance data obtained on a next-generation mask metrology tool, 0000 (21 May 1996); doi: 10.1117/12.240127
Proc. SPIE 2725, Depth-of-focus increase based on detector pixel size in optical microscopes, 0000 (21 May 1996); doi: 10.1117/12.240128
Proc. SPIE 2725, Benefits applications and data analysis techniques for linewidth multilevel experimental design, 0000 (21 May 1996); doi: 10.1117/12.240129
Scanning Probe Metrology
Proc. SPIE 2725, Toward accurate linewidth metrology using atomic force microscopy and tip characterization, 0000 (21 May 1996); doi: 10.1117/12.240131
Proc. SPIE 2725, Process improvement and cost reduction utilizing a fully automated CD SEM for thin film head pole 2 resist measurements, 0000 (21 May 1996); doi: 10.1117/12.240132
Scatterometry for Versatile Applications