PROCEEDINGS VOLUME 2726
SPIE'S 1996 INTERNATIONAL SYMPOSIUM ON MICROLITHOGRAPHY | 10-15 MARCH 1996
Optical Microlithography IX
SPIE'S 1996 INTERNATIONAL SYMPOSIUM ON MICROLITHOGRAPHY
10-15 March 1996
Santa Clara, CA, United States
Plenary Session
Proc. SPIE 2726, Patterning ULSI circuits, 0000 (7 June 1996); doi: 10.1117/12.240903
Proc. SPIE 2726, University-industry relations: what do we do now?, 0000 (7 June 1996); doi: 10.1117/12.240913
Proc. SPIE 2726, Science and technology policy in the 104th Congress, 0000 (7 June 1996); doi: 10.1117/12.240923
Resolution Enhancement
Proc. SPIE 2726, Challenges to depth-of-focus enhancement with a practical super-resolution technique, 0000 (7 June 1996); doi: 10.1117/12.240934
Proc. SPIE 2726, Viability of conventional high-NA KrF imaging for sub-0.25-um lithography, 0000 (7 June 1996); doi: 10.1117/12.240943
Proc. SPIE 2726, Photolithography using the AERIAL illuminator in a variable-NA wafer stepper, 0000 (7 June 1996); doi: 10.1117/12.240954
Proc. SPIE 2726, Signamization, 0000 (7 June 1996); doi: 10.1117/12.240965
Circuit/Device Applications
Proc. SPIE 2726, Wafer and chip deformation caused by pattern transfer, 0000 (7 June 1996); doi: 10.1117/12.240975
Proc. SPIE 2726, Pattern transfer at k1=0.5: get 0.25-um lithography ready for manufacturing, 0000 (7 June 1996); doi: 10.1117/12.240904
Proc. SPIE 2726, Application of deep-UV resist for 0.25-um metal and poly processing, 0000 (7 June 1996); doi: 10.1117/12.240905
Lithography Simulation
Proc. SPIE 2726, Approximate models for resist processing effects, 0000 (7 June 1996); doi: 10.1117/12.240906
Proc. SPIE 2726, Mathematical and CAD framework for proximity correction, 0000 (7 June 1996); doi: 10.1117/12.240907
Proc. SPIE 2726, Lithography model tuning: matching simulation to experiment, 0000 (7 June 1996); doi: 10.1117/12.240908
Proc. SPIE 2726, Simulations and experiments with the phase-shift focus monitor, 0000 (7 June 1996); doi: 10.1117/12.240909
Pushing the Limits
Proc. SPIE 2726, Top-surface imaging and optical proximity correction: a way to 0.18-um lithography at 248 nm, 0000 (7 June 1996); doi: 10.1117/12.240910
Proc. SPIE 2726, Effects of radially nonsymmetric pupil filters and multiple-pupil exposure, 0000 (7 June 1996); doi: 10.1117/12.240911
Proc. SPIE 2726, How focus budgets are spent: limitations of advanced i-line lithography, 0000 (7 June 1996); doi: 10.1117/12.240912
Proc. SPIE 2726, Migrating deep-UV lithography to the 0.25-um regime: issues and outlook, 0000 (7 June 1996); doi: 10.1117/12.240914
Proc. SPIE 2726, Measurement of microlithography aerial image quality, 0000 (7 June 1996); doi: 10.1117/12.240915
Advanced Masks
Proc. SPIE 2726, Practical implementation of alternating PSM to memory device of sub-0.25-um technology, 0000 (7 June 1996); doi: 10.1117/12.240916
Proc. SPIE 2726, 0.2-um lithography using i-line and alternating phase-shift mask, 0000 (7 June 1996); doi: 10.1117/12.240917
Proc. SPIE 2726, Implementation of attenuated PSMs in DRAM production, 0000 (7 June 1996); doi: 10.1117/12.240918
Proc. SPIE 2726, Practical topography design for alternating phase-shifting mask, 0000 (7 June 1996); doi: 10.1117/12.240919
Proc. SPIE 2726, Development of a particle-detection system for phase-shifting masks, 0000 (7 June 1996); doi: 10.1117/12.240920
CD Control
Proc. SPIE 2726, Imaging parameter optimization for advanced lithography based on STELLA, 0000 (7 June 1996); doi: 10.1117/12.240921
Proc. SPIE 2726, Comprehensive focus-overlay-CD correlation to identify photolithographic performance, 0000 (7 June 1996); doi: 10.1117/12.240922
Proc. SPIE 2726, Characterization and optimization of CD control for 0.25-um CMOS applications, 0000 (7 June 1996); doi: 10.1117/12.240924
Proc. SPIE 2726, Novel optimization method for antireflection coating, 0000 (7 June 1996); doi: 10.1117/12.240925
Proc. SPIE 2726, Novel antireflection method with gradient photoabsorption for optical lithography, 0000 (7 June 1996); doi: 10.1117/12.240926
Optical Proximity Effects
Proc. SPIE 2726, Optical proximity effects and correction strategies for chemical-amplified DUV resists, 0000 (7 June 1996); doi: 10.1117/12.240927
Proc. SPIE 2726, Evaluation of proximity effects using three-dimensional optical lithography simulation, 0000 (7 June 1996); doi: 10.1117/12.240928
Proc. SPIE 2726, Fast and accurate optical proximity correction based on aerial image simulation, 0000 (7 June 1996); doi: 10.1117/12.240929
Proc. SPIE 2726, Customizing proximity correction for process-specific objectives, 0000 (7 June 1996); doi: 10.1117/12.240930
Proc. SPIE 2726, Optimization of stepper parameters and their influence on OPC, 0000 (7 June 1996); doi: 10.1117/12.240931
CD Control
Proc. SPIE 2726, Influence of process latitude on exposure characteristics, 0000 (7 June 1996); doi: 10.1117/12.240932
193-nm Lithography
Proc. SPIE 2726, ArF MicroStep for 193-nm process development, 0000 (7 June 1996); doi: 10.1117/12.240933
Proc. SPIE 2726, Material limitations to 193-nm lithographic system lifetimes, 0000 (7 June 1996); doi: 10.1117/12.240935
Advanced Exposure Systems
Proc. SPIE 2726, Step-and-scan and step-and-repeat: a technology comparison, 0000 (7 June 1996); doi: 10.1117/12.240936
Proc. SPIE 2726, Stepper exposure system for the quarter-micrometer age, 0000 (7 June 1996); doi: 10.1117/12.240937
Proc. SPIE 2726, KrF step-and-scan exposure system using higher-NA projection lens, 0000 (7 June 1996); doi: 10.1117/12.240938
Proc. SPIE 2726, Micrascan III: 0.25-um resolution step-and-scan system, 0000 (7 June 1996); doi: 10.1117/12.240939
Exposure Tool Subsystems
Proc. SPIE 2726, Lithographic lens testing: analysis of measured aerial images, interferometric data, and photoresist measurements, 0000 (7 June 1996); doi: 10.1117/12.240940
Proc. SPIE 2726, Focus and exposure dose determination using stepper alignment, 0000 (7 June 1996); doi: 10.1117/12.240941
Proc. SPIE 2726, Stepper overlay performance measurements using the air-turbulence-compensated interferometer, 0000 (7 June 1996); doi: 10.1117/12.240942
Proc. SPIE 2726, Extremely narrow-bandwidth high-repetition-rate laser for high-NA step-and-scan tools, 0000 (7 June 1996); doi: 10.1117/12.240944
Proc. SPIE 2726, High-power KrF excimer laser with a solid state switch for microlithography, 0000 (7 June 1996); doi: 10.1117/12.240945
Proc. SPIE 2726, Efficient all-solid state 213-nm laser source for microlithography, 0000 (7 June 1996); doi: 10.1117/12.240946
Advanced Masks
Proc. SPIE 2726, Improvement of resist pattern fidelity with partial attenuated phase-shift mask, 0000 (7 June 1996); doi: 10.1117/12.240947
Proc. SPIE 2726, Swing curve characteristics of halftone PSM with off-axis illumination for i-line lithography, 0000 (7 June 1996); doi: 10.1117/12.240948
Optical Proximity Effects
Proc. SPIE 2726, Optical proximity correction of bit line pattern in DRAM devices, 0000 (7 June 1996); doi: 10.1117/12.240949
Advanced Masks
Proc. SPIE 2726, Application of alternating phase-shifting masks to sub-quarter-micrometer contact holes, 0000 (7 June 1996); doi: 10.1117/12.240950
Circuit/Device Applications
Proc. SPIE 2726, Fabrication of single/double crown-shaped capacitors on DRAM cell using phase-shift mask technology, 0000 (7 June 1996); doi: 10.1117/12.240951
Resolution Enhancement
Proc. SPIE 2726, Resolution improvement of isolated line pattern in quarter-micrometer level by layout-optimized assistant pattern method, 0000 (7 June 1996); doi: 10.1117/12.240952
Proc. SPIE 2726, Sub-quarter-micrometer contact hole fabrication using annular illumination, 0000 (7 June 1996); doi: 10.1117/12.240953
Lithography Simulation
Proc. SPIE 2726, Integrated CAD framework linking VLSI layout editors and process simulators, 0000 (7 June 1996); doi: 10.1117/12.240955
Exposure Tool Subsystems
Proc. SPIE 2726, Improved method for the automated determination of E0 for lithography SPC, 0000 (7 June 1996); doi: 10.1117/12.240956
Proc. SPIE 2726, Method for measuring absorbed energy density in photoresist in a laser pattern generation, 0000 (7 June 1996); doi: 10.1117/12.240957
Circuit/Device Applications
Proc. SPIE 2726, Effects of complex illumination on lithography performance, 0000 (7 June 1996); doi: 10.1117/12.240958