PROCEEDINGS VOLUME 2780
METAL/NONMETAL MICROSYSTEMS: PHYSICS, TECHNOLOGY, AND APPLICATIONS | 11-14 SEPTEMBER 1995
Metal/Nonmetal Microsystems: Physics, Technology, and Applications
METAL/NONMETAL MICROSYSTEMS: PHYSICS, TECHNOLOGY, AND APPLICATIONS
11-14 September 1995
Polanica Zdroj, Poland
Cermets with organic and inorganic matrix-transport properties
Proc. SPIE 2780, Characteristics of screen-printed polymer thick films, 0000 (8 April 1996); doi: 10.1117/12.238121
Proc. SPIE 2780, Aging of metal/hard-carbon films, 0000 (8 April 1996); doi: 10.1117/12.238131
Proc. SPIE 2780, Description of fractal structure of discontinuous Mn films evaporated on quartz-glass substrates, 0000 (8 April 1996); doi: 10.1117/12.238142
Proc. SPIE 2780, Influence of microstructure on electrical properties of discontinuous Mn films, 0000 (8 April 1996); doi: 10.1117/12.238153
Proc. SPIE 2780, Polymer/conductive filler composites: chosen properties and application, 0000 (8 April 1996); doi: 10.1117/12.238164
Proc. SPIE 2780, Prospect and retrospect of thin films in electronics, 0000 (8 April 1996); doi: 10.1117/12.238175
Proc. SPIE 2780, Negative differential resistance in MIM devices from vacuum to atmospheric pressure, 0000 (8 April 1996); doi: 10.1117/12.238186
Proc. SPIE 2780, Morphological characteristics of thin metal films, 0000 (8 April 1996); doi: 10.1117/12.238197
Proc. SPIE 2780, AC conductivity and capacitance measurements on evaporated cadmium telluride thin films, 0000 (8 April 1996); doi: 10.1117/12.238200
Proc. SPIE 2780, Amorphous-to-superconducting transformation in bismuth-based high-Tc superconducting rods, 0000 (8 April 1996); doi: 10.1117/12.238122
Proc. SPIE 2780, Lithium-inserted vanadium dioxide (LixVO2) thin films, 0000 (8 April 1996); doi: 10.1117/12.238123
Proc. SPIE 2780, Influence of metallic clusters on conduction in granular metals, 0000 (8 April 1996); doi: 10.1117/12.238124
Proc. SPIE 2780, Electrical conduction in discontinuous metal thin films, 0000 (8 April 1996); doi: 10.1117/12.238125
Proc. SPIE 2780, Polyimide films prepared by electrophoretic deposition and their dielectric breakdown, 0000 (8 April 1996); doi: 10.1117/12.238126
Proc. SPIE 2780, Plasma formation of thin alumina films, 0000 (8 April 1996); doi: 10.1117/12.238127
Proc. SPIE 2780, Dependence of resistivity in evaporated cadmium selenide thin films on preparation conditions and temperature, 0000 (8 April 1996); doi: 10.1117/12.238128
Proc. SPIE 2780, Electrical noise in MIM structures, 0000 (8 April 1996); doi: 10.1117/12.238129
Proc. SPIE 2780, Polaronic conduction in electron-beam-evaporated Cu-GeO2 thin cermet films, 0000 (8 April 1996); doi: 10.1117/12.238306
Proc. SPIE 2780, Temperature dependence of resistance in percolation systems, 0000 (8 April 1996); doi: 10.1117/12.238130
Proc. SPIE 2780, 1/f noise in systems with exponentially wide spectrum of resistances, 0000 (8 April 1996); doi: 10.1117/12.238132
Diagnostics of solid state microsystems
Proc. SPIE 2780, Magnetic, structural, and transport properties of CuMnFeO4 compound, 0000 (8 April 1996); doi: 10.1117/12.238133
Proc. SPIE 2780, Pseudopotential method for band structure energy of liquid metals, 0000 (8 April 1996); doi: 10.1117/12.238134
Proc. SPIE 2780, Resistivity of liquid metals on Veljkovic-Slavic pseudopotential, 0000 (8 April 1996); doi: 10.1117/12.238135
Proc. SPIE 2780, RHEED study of oxygen ion implantation effects on GaAs surface, 0000 (8 April 1996); doi: 10.1117/12.238136
Proc. SPIE 2780, Equipment for investigation of electronic devices with voltage contrast technique in SEM, 0000 (8 April 1996); doi: 10.1117/12.238137
Proc. SPIE 2780, Methods of topography mode realization in scanning electron microscope, 0000 (8 April 1996); doi: 10.1117/12.238138
Proc. SPIE 2780, Deep localized state energy distribution in a-Se and a-Si:H layers, 0000 (8 April 1996); doi: 10.1117/12.238139
Proc. SPIE 2780, Digital analysis of photo-induced current transients in semi-insulating GaAs and InP, 0000 (8 April 1996); doi: 10.1117/12.238140
Proc. SPIE 2780, Electrically active defects in Ni-contaminated Cz-Si with oxygen precipitates, 0000 (8 April 1996); doi: 10.1117/12.238141
Proc. SPIE 2780, Photoreflectance spectroscopy for semiconductor structure investigations, 0000 (8 April 1996); doi: 10.1117/12.238143
Proc. SPIE 2780, LBIC investigation of the dynamic behavior of trapping-recombination centers, 0000 (8 April 1996); doi: 10.1117/12.238144
Proc. SPIE 2780, DLTS study in GaAs1-xSbx, 0000 (8 April 1996); doi: 10.1117/12.238145
Proc. SPIE 2780, Mixing in group-V sublattice of GaAs-related crystals, 0000 (8 April 1996); doi: 10.1117/12.238146
Proc. SPIE 2780, FTIR study of oxygen precipitation in high-pressure-treated Cz-Si contaminated by transition metals, 0000 (8 April 1996); doi: 10.1117/12.238147
Proc. SPIE 2780, Conductivity measurement of GaAs layers after oxygen ion bombardment, 0000 (8 April 1996); doi: 10.1117/12.238148
Proc. SPIE 2780, Application of galvanomagnetic measurements in temperature range 70-300 K to MBE GaAs layers characterization, 0000 (8 April 1996); doi: 10.1117/12.238149
Low-dimensional structures: superlattices and quantum dots
Proc. SPIE 2780, Mesoscopic phenomena in semimagnetic semiconductors, 0000 (8 April 1996); doi: 10.1117/12.238150
Proc. SPIE 2780, Magnetic ions in semiconductor quantum wells and superlattices, 0000 (8 April 1996); doi: 10.1117/12.238151
Proc. SPIE 2780, Angular dependence of the critical current density of Bi2Sr2CaCu2Ox/Bi2Sr2CuOy superlattices, 0000 (8 April 1996); doi: 10.1117/12.238152
Proc. SPIE 2780, Numerical studies of quantum dot electrical transport properties, 0000 (8 April 1996); doi: 10.1117/12.238154
Proc. SPIE 2780, Transport and relaxation properties in low-dimensional (TaSe4)2J crystals, 0000 (8 April 1996); doi: 10.1117/12.238155
Proc. SPIE 2780, Critical point for localization/delocalization transition in 3D metal-insulator systems, 0000 (8 April 1996); doi: 10.1117/12.238156
Proc. SPIE 2780, Magnetoelastic properties of magnetic superlattices, 0000 (8 April 1996); doi: 10.1117/12.238157
Microsensors: materials, devices, and technology
Proc. SPIE 2780, Thermoelectric properties of high-temperature recrystallized Ge films, 0000 (8 April 1996); doi: 10.1117/12.238158
Proc. SPIE 2780, Preparation and properties of ferroelectric thin PZT films, 0000 (8 April 1996); doi: 10.1117/12.238159
Proc. SPIE 2780, Artificial neural network approach for humidity-influenced methane sensor response processing, 0000 (8 April 1996); doi: 10.1117/12.238160
Proc. SPIE 2780, Computer model of thick film thermistor, 0000 (8 April 1996); doi: 10.1117/12.238161
Proc. SPIE 2780, Effects of hydrogen absorption on the electrical conduction of discontinuous palladium thin films, 0000 (8 April 1996); doi: 10.1117/12.238162
Proc. SPIE 2780, Pyroelectric effect in gas sensing, 0000 (8 April 1996); doi: 10.1117/12.238163
Proc. SPIE 2780, Influence of NH3 adsorption on electron transfer in polyaniline thin films, 0000 (8 April 1996); doi: 10.1117/12.238165
Proc. SPIE 2780, Biosensors based on SPR and optimization of their working parameters, 0000 (8 April 1996); doi: 10.1117/12.238166
Proc. SPIE 2780, Piezoelectric microsensors based on thin ferroelectric films, 0000 (8 April 1996); doi: 10.1117/12.238167
Proc. SPIE 2780, Screen-printed silicon solar cells with texturized and passivated emitter diffused from spin-on phosphorous source, 0000 (8 April 1996); doi: 10.1117/12.238168
Molecular electronics
Proc. SPIE 2780, Plasma polymer films for surface modification, 0000 (8 April 1996); doi: 10.1117/12.238169
Proc. SPIE 2780, Growth and pyroelectrical properties of thin films of alkali metal stearates obtained by vacuum deposition, 0000 (8 April 1996); doi: 10.1117/12.238170
Proc. SPIE 2780, Operation mechanisms of organic electroluminescent diodes based on commonly used low-molecular-weight materials, 0000 (8 April 1996); doi: 10.1117/12.238171
Proc. SPIE 2780, Electrical conductivity and light emission in a system of metal nanoparticles and organic molecules, 0000 (8 April 1996); doi: 10.1117/12.238172
Proc. SPIE 2780, Gold-chloroindium phthalocyanine (ClInPc)-metal sandwich structures, 0000 (8 April 1996); doi: 10.1117/12.238173
Proc. SPIE 2780, Organic electroluminescence: materials and devices, 0000 (8 April 1996); doi: 10.1117/12.238174