PROCEEDINGS VOLUME 2793
SYMPOSIUM ON PHOTOMASK AND X-RAY MASK TECHNOLOGY | 18-19 APRIL 1996
Photomask and X-Ray Mask Technology III
IN THIS VOLUME

0 Sessions, 53 Papers, 0 Presentations
Equipment  (9)
Metrology  (2)
SYMPOSIUM ON PHOTOMASK AND X-RAY MASK TECHNOLOGY
18-19 April 1996
Kawasaki City, Japan
Photomask Process and Materials
Proc. SPIE 2793, Bilevel resist process for 1-Gb DRAM reticles, 0000 (24 July 1996); doi: 10.1117/12.245208
Proc. SPIE 2793, Manufacturing feasibility of OPC masks for 0.25-um rule devices, 0000 (24 July 1996); doi: 10.1117/12.245218
Phase-Shift Mask
Proc. SPIE 2793, Fabrication of dense contact patterns using halftone phase-shifting mask with off-axis illumination, 0000 (24 July 1996); doi: 10.1117/12.245224
Photomask Process and Materials
Proc. SPIE 2793, Mask technology for 0.18-um device generation, 0000 (24 July 1996); doi: 10.1117/12.245234
Phase-Shift Mask
Proc. SPIE 2793, Development of advanced process for halftone phase-shift mask fabrication with electron-beam exposure systems, 0000 (24 July 1996); doi: 10.1117/12.245245
Proc. SPIE 2793, Evaluation of phase and transmittance error on deep-UV halftone phase-shift mask, 0000 (24 July 1996); doi: 10.1117/12.245248
Photomask Process and Materials
Proc. SPIE 2793, Chemically amplified resist process for 0.25-um generation photomasks, 0000 (24 July 1996); doi: 10.1117/12.245249
Masks for X-Ray and E-Beam
Proc. SPIE 2793, Current status of x-ray mask manufacturing at the Microlithographic Mask Development Center, 0000 (24 July 1996); doi: 10.1117/12.245250
Proc. SPIE 2793, Highly stiff x-ray mask blank with heat resistance and inertness to chemicals, 0000 (24 July 1996); doi: 10.1117/12.245198
Proc. SPIE 2793, Cleaning process for x-ray masks, 0000 (24 July 1996); doi: 10.1117/12.245199
Proc. SPIE 2793, Study on x-ray irradiation stability of absorber materials for x-ray masks by stress measurement, 0000 (24 July 1996); doi: 10.1117/12.245200
Proc. SPIE 2793, Defect printability analysis in electron-beam cell projection lithography, 0000 (24 July 1996); doi: 10.1117/12.245201
Photomask Process and Materials
Proc. SPIE 2793, DOF enhancement effect of attenuated assist feature, 0000 (24 July 1996); doi: 10.1117/12.245202
Proc. SPIE 2793, Pattern shift error induced by coating and developing, 0000 (24 July 1996); doi: 10.1117/12.245203
Phase-Shift Mask
Proc. SPIE 2793, Investigation on application of chromium-based materials to attenuated phase-shift masks for DUV exposure, 0000 (24 July 1996); doi: 10.1117/12.245204
Photomask Process and Materials
Proc. SPIE 2793, Resolution enhancement with thin Cr for chrome mask making, 0000 (24 July 1996); doi: 10.1117/12.245205
Proc. SPIE 2793, PBS process optimization for bow-wake phenomena, 0000 (24 July 1996); doi: 10.1117/12.245206
Proc. SPIE 2793, New concept for negative-tone electron-beam resist, 0000 (24 July 1996); doi: 10.1117/12.245207
Proc. SPIE 2793, Photomask blanks enhancement by optimizing resist baking and coating for advanced e-beam reticle fabrication, 0000 (24 July 1996); doi: 10.1117/12.245209
Phase-Shift Mask
Proc. SPIE 2793, Evaluation of performance of attenuated phase-shift mask using simulation, 0000 (24 July 1996); doi: 10.1117/12.245210
Proc. SPIE 2793, (LaNiO3)x(Ta2O5)1-x oxide thin films for attenuated phase-shifting mask blank, 0000 (24 July 1996); doi: 10.1117/12.245211
Proc. SPIE 2793, Ta-Si-O absorptive shifter for the attenuated phase-shifting mask, 0000 (24 July 1996); doi: 10.1117/12.245212
Proc. SPIE 2793, Subquarter-micron lithography with dual-trench-type alternating PSM, 0000 (24 July 1996); doi: 10.1117/12.245213
Masks for X-Ray and E-Beam
Proc. SPIE 2793, Simulation of x-ray mask displacement by absorber and membrane stress, 0000 (24 July 1996); doi: 10.1117/12.245214
Proc. SPIE 2793, Characteristics of Ta4B/SiC x-ray mask blanks, 0000 (24 July 1996); doi: 10.1117/12.245215
Proc. SPIE 2793, Diamond membrane for x-ray lithography, 0000 (24 July 1996); doi: 10.1117/12.245216
Design Automation
Proc. SPIE 2793, Pattern-data preparation method to enchance high-throughput mask fabrication in variable-shaped e-beam writing system, 0000 (24 July 1996); doi: 10.1117/12.245217
Proc. SPIE 2793, Geometrical library recognition for mask data compression, 0000 (24 July 1996); doi: 10.1117/12.245219
Proc. SPIE 2793, Parallel photomask pattern data conversion and verification system, 0000 (24 July 1996); doi: 10.1117/12.245220
Inspection and Repair
Proc. SPIE 2793, Recent progress in repair accuracy of the focused ion-beam mask repair system, 0000 (24 July 1996); doi: 10.1117/12.245221
Proc. SPIE 2793, Focused ion-beam imaging of defects on deep-UV single-layer halftone masks, 0000 (24 July 1996); doi: 10.1117/12.245222
Proc. SPIE 2793, Detectability and printability of programmed defect reticle for 256-Mb DRAM, 0000 (24 July 1996); doi: 10.1117/12.245223
Proc. SPIE 2793, DUV printability of laser repairs on binary and attenuated phase-shift masks, 0000 (24 July 1996); doi: 10.1117/12.245225
Equipment
Proc. SPIE 2793, Transmittance measurement with interferometer system, 0000 (24 July 1996); doi: 10.1117/12.245226
Proc. SPIE 2793, Performance of i- and g-line phase-shift measurement system MPM-100, 0000 (24 July 1996); doi: 10.1117/12.245227
Proc. SPIE 2793, CD metrology microscope SiSCAN 7325TQ for back-side measurement, 0000 (24 July 1996); doi: 10.1117/12.245228
Proc. SPIE 2793, Improvement of pattern position accuracy with the LMS2020, 0000 (24 July 1996); doi: 10.1117/12.245229
Design Automation
Proc. SPIE 2793, New figure-fracturing algorithm for high-quality variable-shaped e-beam exposure data generation, 0000 (24 July 1996); doi: 10.1117/12.245230
Pelliclization
Proc. SPIE 2793, Development of deep-UV and excimer pellicle (membrane longevity), 0000 (24 July 1996); doi: 10.1117/12.245231
Proc. SPIE 2793, Evaluation of light resistance of pellicle membrane in the environment with solvent, 0000 (24 July 1996); doi: 10.1117/12.245232
Equipment
Proc. SPIE 2793, Evaluation of the MEBES 4500 reticle writer to commercial requirements of 250-nm design rule IC devices, 0000 (24 July 1996); doi: 10.1117/12.245233
Proc. SPIE 2793, Electron-beam mask writing system for 0.25-um device generation, 0000 (24 July 1996); doi: 10.1117/12.245235
Proc. SPIE 2793, Exposure of 895i resist using a vector scan Gaussian electron-beam lithography system, 0000 (24 July 1996); doi: 10.1117/12.245236
Proc. SPIE 2793, Laser mask repair technology for 256-Mb DRAM reticle, 0000 (24 July 1996); doi: 10.1117/12.245237
Proc. SPIE 2793, High-resolution deep-UV laser mask repair based on near-field optical technology, 0000 (24 July 1996); doi: 10.1117/12.245238
Metrology
Proc. SPIE 2793, Reticle consideration for 0.30-um design rules: between aspiration and actuality, 0000 (24 July 1996); doi: 10.1117/12.245239
Proc. SPIE 2793, New approach to phase metrology for manufacturing 248-nm lithography-based embedded attenuated phase-shifting mask, 0000 (24 July 1996); doi: 10.1117/12.245240
Inspection and Repair
Proc. SPIE 2793, Investigation of phase-shift mask shifter defect printability and inspection techniques, 0000 (24 July 1996); doi: 10.1117/12.245241
Proc. SPIE 2793, Direct phase-shift measurement with transmitted deep-UV illumination, 0000 (24 July 1996); doi: 10.1117/12.245242
Proc. SPIE 2793, Die-to-database inspection of 256-Mb DRAM reticles, 0000 (24 July 1996); doi: 10.1117/12.245243
Proc. SPIE 2793, Detection and printability of random and programmed pinholes on Cr photomasks, 0000 (24 July 1996); doi: 10.1117/12.245244
Proc. SPIE 2793, Automatic photomask defect classification method, 0000 (24 July 1996); doi: 10.1117/12.245246
Proc. SPIE 2793, Application of phase-sensitive optical system for soft defect detection, 0000 (24 July 1996); doi: 10.1117/12.245247
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