PROCEEDINGS VOLUME 2874
MICROELECTRONIC MANUFACTURING 1996 | 16-18 OCTOBER 1996
Microelectronic Manufacturing Yield, Reliability, and Failure Analysis II
MICROELECTRONIC MANUFACTURING 1996
16-18 October 1996
Austin, TX, United States
Statistical Metrology and In-Process Control
Proc. SPIE 2874, Statistical metrology: understanding spatial variation in semiconductor manufacturing, 0000 (12 September 1996); doi: 10.1117/12.250817
Proc. SPIE 2874, Inter- and intra-die polysilicon critical dimension variation, 0000 (12 September 1996); doi: 10.1117/12.250826
Proc. SPIE 2874, Real-time determination of interconnect metrology, 0000 (12 September 1996); doi: 10.1117/12.250836
Proc. SPIE 2874, Metrology automation reliability, 0000 (12 September 1996); doi: 10.1117/12.250846
Proc. SPIE 2874, Determination of critical process steps for enhanced yield improvement, 0000 (12 September 1996); doi: 10.1117/12.250852
Yield Monitoring and In-Line Process Control
Proc. SPIE 2874, Correlation between particle defects and electrical faults determined with laser scattering systems and digital measurements on checkerboard test structures, 0000 (12 September 1996); doi: 10.1117/12.250853
Proc. SPIE 2874, Accurate prediction of kill ratios based on KLA defect inspection and critical area analysis, 0000 (12 September 1996); doi: 10.1117/12.250854
Proc. SPIE 2874, Fast failure analysis and yield enhancement: an integrated approach, 0000 (12 September 1996); doi: 10.1117/12.250818
Proc. SPIE 2874, Role of RIE in microchip bond pad corrosion, 0000 (12 September 1996); doi: 10.1117/12.250819
Device Reliability
Proc. SPIE 2874, Characterization of intrinsic thin silicon dioxide breakdown under static and dynamic stress, 0000 (12 September 1996); doi: 10.1117/12.250820
Proc. SPIE 2874, Plasma-etching-induced oxide degradation: effects upon device performance and circuit yield, 0000 (12 September 1996); doi: 10.1117/12.250821
Proc. SPIE 2874, Time reduction of MCM-D prototype realization by process control and modeling, 0000 (12 September 1996); doi: 10.1117/12.250822
Design and Test for Yield and Quality Improvements: An Integration of Process Technology with Design Technology
Proc. SPIE 2874, Using IDD to analyze analog faults and development of a sensor, 0000 (12 September 1996); doi: 10.1117/12.250823
Proc. SPIE 2874, Built-in self-test for high-speed integrated circuits, 0000 (12 September 1996); doi: 10.1117/12.250824
Proc. SPIE 2874, Design of the UltraSPARC-I microprocessor for manufacturing performance, 0000 (12 September 1996); doi: 10.1117/12.250825
Proc. SPIE 2874, Defect mapping and repair in UltraSPARC-I microprocessor memories, 0000 (12 September 1996); doi: 10.1117/12.250827
Yield Modeling and Improvement
Proc. SPIE 2874, Sampling-based yield prediction for ULSI, 0000 (12 September 1996); doi: 10.1117/12.250828
Proc. SPIE 2874, SAS: a yield/failure analysis software tool, 0000 (12 September 1996); doi: 10.1117/12.250829
Proc. SPIE 2874, Advanced software system for yield improvement on manufacturing fab, 0000 (12 September 1996); doi: 10.1117/12.250830
Failure Analysis
Proc. SPIE 2874, Source drain leakage: a potential problem in submicron CMOS devices, 0000 (12 September 1996); doi: 10.1117/12.250831
Proc. SPIE 2874, Back side emission microscopy for failure analysis, 0000 (12 September 1996); doi: 10.1117/12.250832
Proc. SPIE 2874, Analysis of stress-driven delamination in contact vias, 0000 (12 September 1996); doi: 10.1117/12.250833
Proc. SPIE 2874, Rapid integrated circuit delayering without grass, 0000 (12 September 1996); doi: 10.1117/12.250834
Proc. SPIE 2874, Laser chemical vapor deposition of Cu and Ni in integrated circuit repair, 0000 (12 September 1996); doi: 10.1117/12.250835
Proc. SPIE 2874, Reliability issue on pipeline defects in CMOS memory devices, 0000 (12 September 1996); doi: 10.1117/12.250837
Proc. SPIE 2874, Fault isolation with fanin tree technique, 0000 (12 September 1996); doi: 10.1117/12.250838
Design and Test for Yield and Quality Improvements: An Integration of Process Technology with Design Technology
Proc. SPIE 2874, Rapid debug of yield and performance bottlenecks within the UltraSPARC-I microprocessor, 0000 (12 September 1996); doi: 10.1117/12.250839
Posters--Wednesday
Proc. SPIE 2874, Automated collection of yield and performance analysis data during UltraSPARC-I microprocessor production test, 0000 (12 September 1996); doi: 10.1117/12.250840
Proc. SPIE 2874, UltraSPARC-I microprocessor yield and performance analysis, 0000 (12 September 1996); doi: 10.1117/12.250841
Proc. SPIE 2874, Defect analysis and classification in process control using an SEM and EDX review station, 0000 (12 September 1996); doi: 10.1117/12.250842
Proc. SPIE 2874, Plasma-induced oxide contamination in a 0.35-um CMOS process, 0000 (12 September 1996); doi: 10.1117/12.250843
Proc. SPIE 2874, Defect detection and control in an analog CMOS process, 0000 (12 September 1996); doi: 10.1117/12.250844
Proc. SPIE 2874, Multifractal point defect clusters in subsurface damaged layer of semiconductor wafers, 0000 (12 September 1996); doi: 10.1117/12.250845
Proc. SPIE 2874, Modern concept of focused ion beam techniques for reliability analysis in VLSI manufacturing, 0000 (12 September 1996); doi: 10.1117/12.250847
Plenary Paper
Proc. SPIE 2874, Productivity improvement through industrial engineering in the semiconductor industry, 0000 (12 September 1996); doi: 10.1117/12.250849
Yield Monitoring and In-Line Process Control
Proc. SPIE 2874, Wire length and via reduction for yield enhancement, 0000 (12 September 1996); doi: 10.1117/12.250850
Posters--Wednesday
Proc. SPIE 2874, High contact resistance heavily doped silicided p+ junctions, 0000 (12 September 1996); doi: 10.1117/12.250851
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