PROCEEDINGS VOLUME 2877
MICROELECTRONIC MANUFACTURING 1996 | 16-18 OCTOBER 1996
Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing III
MICROELECTRONIC MANUFACTURING 1996
16-18 October 1996
Austin, TX, United States
Film Characterization
Proc. SPIE 2877, Determination of COP distribution after SC1 cleaning by a laser particle counter, 0000 (13 September 1996); doi: 10.1117/12.250919
Proc. SPIE 2877, Optical characterization of amorphous and polycrystalline silicon films, 0000 (13 September 1996); doi: 10.1117/12.250929
Proc. SPIE 2877, Optical field effect transistor with an indium tin oxide gate electrode, 0000 (13 September 1996); doi: 10.1117/12.250937
Proc. SPIE 2877, Study of cathodoluminescence spectroscopy of aluminum nitride, 0000 (13 September 1996); doi: 10.1117/12.250938
Proc. SPIE 2877, Morphology, composition, and properties of the amorphous hydrogenated carbon (C:H) films, 0000 (13 September 1996); doi: 10.1117/12.250939
Proc. SPIE 2877, Semiconductor surface superlattice symmetry type evaluation, 0000 (13 September 1996); doi: 10.1117/12.250940
Proc. SPIE 2877, Nematic thin layer self-organization caused by semiconductor surface superlattice, 0000 (13 September 1996); doi: 10.1117/12.250941
Substrate Characterization
Proc. SPIE 2877, Formation of oxygen-related donors during transition from thermal donors to new donors in CZ-silicon, 0000 (13 September 1996); doi: 10.1117/12.250920
Innovative Technologies
Proc. SPIE 2877, Thermal wave analysis of the formation of titanium disilicide on submicron lines, 0000 (13 September 1996); doi: 10.1117/12.250921
Proc. SPIE 2877, Low-temperature photoluminescence characterization of impurity-doped GaAs and silicides prepared by molecular beam epitaxy, high-energy ion implantation, and combined ion-beam and molecular beam epi, 0000 (13 September 1996); doi: 10.1117/12.250922
Proc. SPIE 2877, Automated visual inspection stations for next-generation semiconductor package quality control, 0000 (13 September 1996); doi: 10.1117/12.250923
Proc. SPIE 2877, Polymer waveguide-based 1-GHz clock signal distribution system, 0000 (13 September 1996); doi: 10.1117/12.250924
Proc. SPIE 2877, Grating-based surface-normal optoelectronic interconnects on Si substrate, 0000 (13 September 1996); doi: 10.1117/12.250925
Proc. SPIE 2877, Novel double-focus interferometer for scanning force microscope, 0000 (13 September 1996); doi: 10.1117/12.250926
Semiconductor Fabrication
Proc. SPIE 2877, Combined spectroscopic ellipsometry and reflectometry for advanced semiconductor fabrication metrology, 0000 (13 September 1996); doi: 10.1117/12.250927
Proc. SPIE 2877, Stark effect: a novel method of characterization of low-dimensional heterostructure semiconductor lasers, 0000 (13 September 1996); doi: 10.1117/12.250928
Proc. SPIE 2877, Mode structure laser radiation influence on the periodical surface structures intracavity production, 0000 (13 September 1996); doi: 10.1117/12.250930
Surface Charging and Diffusion Length Measurements
Proc. SPIE 2877, Metal-induced charge and growth rate of ultrathin thermal oxide films grown on Al or Fe contaminated Si (100) surfaces, 0000 (13 September 1996); doi: 10.1117/12.250931
Proc. SPIE 2877, Implementing surface photo-voltage in manufacturing, 0000 (13 September 1996); doi: 10.1117/12.250932
Proc. SPIE 2877, Electron emission phenomena controlled by a transverse electric field in compound emitters, 0000 (13 September 1996); doi: 10.1117/12.250933
Proc. SPIE 2877, Real-time preparation-free imaging of mobile charge in SiO2, 0000 (13 September 1996); doi: 10.1117/12.250934
Semiconductor Fabrication
Proc. SPIE 2877, Spectrophotometry and beam profile reflectometry measurement of six layers in an SOI film stack, 0000 (13 September 1996); doi: 10.1117/12.250935
Plenary Paper
Proc. SPIE 2877, Productivity improvement through industrial engineering in the semiconductor industry, 0000 (13 September 1996); doi: 10.1117/12.250936
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