PROCEEDINGS VOLUME 2884
16TH ANNUAL BACUS SYMPOSIUM ON PHOTOMASK TECHNOLOGY AND MANAGEMENT | 18-20 SEPTEMBER 1996
16th Annual BACUS Symposium on Photomask Technology and Management
16TH ANNUAL BACUS SYMPOSIUM ON PHOTOMASK TECHNOLOGY AND MANAGEMENT
18-20 September 1996
Redwood City, CA, United States
Keynote Address
Proc. SPIE 2884, History and future of mask making, 0000 (27 December 1996); doi: 10.1117/12.262794
Photomask Patterning
Proc. SPIE 2884, Investigation of multiphase printing writing modes on mask performance in MEBES 4500, 0000 (27 December 1996); doi: 10.1117/12.262805
Proc. SPIE 2884, Benchmark study of mask writer lithography systems, 0000 (27 December 1996); doi: 10.1117/12.262813
Proc. SPIE 2884, Evaluation criteria for e-beam mask writing systems, 0000 (27 December 1996); doi: 10.1117/12.262822
Proc. SPIE 2884, On-product metrology results from MEBES 4-TFE System, 0000 (27 December 1996); doi: 10.1117/12.262832
Photomask Resist and Process
Proc. SPIE 2884, Improved PBS process for e-beam photomask lithography, 0000 (27 December 1996); doi: 10.1117/12.262846
Proc. SPIE 2884, Process optimization for thin resists for advanced e-beam reticle fabrication, 0000 (27 December 1996); doi: 10.1117/12.262847
Proc. SPIE 2884, Chemically amplified resist process for 0.25-um-generation photomasks, 0000 (27 December 1996); doi: 10.1117/12.262795
Proc. SPIE 2884, Plasma etching of Cr films in the fabrication of photomasks: II. a comparison of etch technologies and a first look at defects, 0000 (27 December 1996); doi: 10.1117/12.262796
Inspection and Repair
Proc. SPIE 2884, Pinhole defect detection and printability prediction, 0000 (27 December 1996); doi: 10.1117/12.262797
Proc. SPIE 2884, Contamination removal from photomasks using a dry laser-assisted cleaning technology, 0000 (27 December 1996); doi: 10.1117/12.262798
Proc. SPIE 2884, Performance of gas-assisted FIB repair for opaque defects, 0000 (27 December 1996); doi: 10.1117/12.262799
Proc. SPIE 2884, Mask inspection and real-time linewidth measurements, 0000 (27 December 1996); doi: 10.1117/12.262800
Proc. SPIE 2884, Subhalf-micron mask defect detectability and printability at 1X reticle magnification, 0000 (27 December 1996); doi: 10.1117/12.262801
Mask Metrology
Proc. SPIE 2884, 1996 mask industry quality assessment, 0000 (27 December 1996); doi: 10.1117/12.262802
Proc. SPIE 2884, Through pellicle coordinate metrology, 0000 (27 December 1996); doi: 10.1117/12.262803
Proc. SPIE 2884, Evaluation of a new photomask CD metrology tool, 0000 (27 December 1996); doi: 10.1117/12.262804
Proc. SPIE 2884, Critical dimension photomask metrology tool requirements for 0.25 um and future microlithography, 0000 (27 December 1996); doi: 10.1117/12.262806
Proc. SPIE 2884, Phase measurement using Hg-Xe lamp and KrF excimer laser, 0000 (27 December 1996); doi: 10.1117/12.262807
Advanced Mask Technologies
Proc. SPIE 2884, Application of alternating phase-shifting masks to 200-nm contact holes, 0000 (27 December 1996); doi: 10.1117/12.262808
Proc. SPIE 2884, Materials screening for attenuating embedded phase-shift photoblanks for DUV and 193-nm photolithography, 0000 (27 December 1996); doi: 10.1117/12.262809
Proc. SPIE 2884, Patterning of membrane masks for projection e-beam lithography, 0000 (27 December 1996); doi: 10.1117/12.262810
Data, Write and Processing Techniques for OPC Reticles
Proc. SPIE 2884, 4X reticles with 3% linewidth control for the development of 0.18-um lithography, 0000 (27 December 1996); doi: 10.1117/12.262811
Proc. SPIE 2884, Optimization of lithography and CD control using GHOST proximity correction with a MEBES 4500 system, 0000 (27 December 1996); doi: 10.1117/12.262812
Proc. SPIE 2884, Mask fabrication rules for proximity-corrected patterns, 0000 (27 December 1996); doi: 10.1117/12.262815
Poster Session
Proc. SPIE 2884, Application of direct-write electron-beam lithography for deep-submicron fabrication, 0000 (27 December 1996); doi: 10.1117/12.262816
Proc. SPIE 2884, Improved pattern placement in membrane mask making, 0000 (27 December 1996); doi: 10.1117/12.262817
Proc. SPIE 2884, Data-processing improvements for photomask pattern generators, 0000 (27 December 1996); doi: 10.1117/12.262818
Proc. SPIE 2884, Performance data obtained on a new mask metrology tool, 0000 (27 December 1996); doi: 10.1117/12.262819
Proc. SPIE 2884, Comparison of reticle placement performance using two-point and multipoint fitting algorithms, 0000 (27 December 1996); doi: 10.1117/12.262820
Proc. SPIE 2884, Overlay can be improved by self-calibrated XY measuring instrument: a lattice perspective, 0000 (27 December 1996); doi: 10.1117/12.262821
Proc. SPIE 2884, Application of deep-UV attenuated PSM to 0.2-um contact hole patterning technology, 0000 (27 December 1996); doi: 10.1117/12.262823
Advanced Mask Technologies
Proc. SPIE 2884, Low-cost mask for excimer laser projection ablation, 0000 (27 December 1996); doi: 10.1117/12.262824
Poster Session
Proc. SPIE 2884, Development of deep-UV MoSi-based embedded phase-shifting mask (EPSM) blanks, 0000 (27 December 1996); doi: 10.1117/12.262825
Proc. SPIE 2884, Evaluation of a fast and flexible OPC package: OPTISSIMO, 0000 (27 December 1996); doi: 10.1117/12.262826
Proc. SPIE 2884, Efficiency analysis of mask fabrication with 1-Gb-DRAM storage node layer, 0000 (27 December 1996); doi: 10.1117/12.262827
Proc. SPIE 2884, Advances in process matching for rules-based optical proximity correction, 0000 (27 December 1996); doi: 10.1117/12.262828
Proc. SPIE 2884, SELID: a new 3D simulator for e-beam lithography, 0000 (27 December 1996); doi: 10.1117/12.262829
Proc. SPIE 2884, FIB repair of opaque defects for 64-Mb-DRAM-level binary masks, 0000 (27 December 1996); doi: 10.1117/12.262830
Proc. SPIE 2884, Conducting poly(aniline-co-N-propanesulfonic acid aniline) (PAPSAH) as charge dissipation layer for e-beam lithography, 0000 (27 December 1996); doi: 10.1117/12.262831
Proc. SPIE 2884, Correction method for radial effect caused by spin process, 0000 (27 December 1996); doi: 10.1117/12.262833
Proc. SPIE 2884, Improvement of CD uniformity with PBS by optimizing the crossover development step, 0000 (27 December 1996); doi: 10.1117/12.262834
Advanced Mask Technologies
Proc. SPIE 2884, Development of the halftone phase-shift mask for DUV exposure, 0000 (27 December 1996); doi: 10.1117/12.262835
Poster Session
Proc. SPIE 2884, Digital interface to photomask vendors, 0000 (27 December 1996); doi: 10.1117/12.262836
Proc. SPIE 2884, Soft-defect inspection equipment based on DIC technique, 0000 (27 December 1996); doi: 10.1117/12.262837
Proc. SPIE 2884, Photolithography challenges for the micromachining industry, 0000 (27 December 1996); doi: 10.1117/12.262838
BACUS '96 Special Focus Program: Defects
Proc. SPIE 2884, Review of defect round table at Photomask Japan '96, 0000 (27 December 1996); doi: 10.1117/12.262839
Proc. SPIE 2884, Detectability and printability of programmed defects in the contact layer for 256-Mb-DRAM grade reticle, 0000 (27 December 1996); doi: 10.1117/12.262840
Proc. SPIE 2884, Mask specifications for 193-nm lithography, 0000 (27 December 1996); doi: 10.1117/12.262841
Proc. SPIE 2884, Reticle cleanliness and handling issues in submicron wafer fabrication, 0000 (27 December 1996); doi: 10.1117/12.262842
Poster Session
Proc. SPIE 2884, Alternating phase-shift generation for complex circuit designs, 0000 (27 December 1996); doi: 10.1117/12.262843
Proc. SPIE 2884, Advanced model for resist heating effect simulation in electron-beam lithography, 0000 (27 December 1996); doi: 10.1117/12.262844
Proc. SPIE 2884, Exposure of the OCG895i resist at the visible 413-nm Kr-ion line in a laser maskwriter, 0000 (27 December 1996); doi: 10.1117/12.262845
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