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Plasma etching of Cr films in the fabrication of photomasks: II. a comparison of etch technologies and a first look at defects
Materials screening for attenuating embedded phase-shift photoblanks for DUV and 193-nm photolithography
Optimization of lithography and CD control using GHOST proximity correction with a MEBES 4500 system
Conducting poly(aniline-co-N-propanesulfonic acid aniline) (PAPSAH) as charge dissipation layer for e-beam lithography
Detectability and printability of programmed defects in the contact layer for 256-Mb-DRAM grade reticle