PROCEEDINGS VOLUME 2886
PHOTONICS CHINA '96 | 4-7 NOVEMBER 1996
Semiconductor Lasers II
PHOTONICS CHINA '96
4-7 November 1996
Beijing, China
Mid-IR Semiconductor Lasers
Proc. SPIE 2886, Optically pumped intersubband electron Raman lasers, 0000 (24 September 1996); doi: 10.1117/12.251875
Poster Session
Proc. SPIE 2886, Intersubband lasing in silicon-based multiple quantum wells, 0000 (24 September 1996); doi: 10.1117/12.251876
Proc. SPIE 2886, Investigation of the dynamic emission spectra of high-frequency pulsed laser diodes for LDA applications, 0000 (24 September 1996); doi: 10.1117/12.251877
Reliability of Semiconductor Lasers
Proc. SPIE 2886, Highly reliable 808-nm laser diodes with AlInGaAs strained quantum well grown by MOCVD, 0000 (24 September 1996); doi: 10.1117/12.251878
Proc. SPIE 2886, Evaluations of As-fabricated GaN-based light-emitting diodes, 0000 (24 September 1996); doi: 10.1117/12.251879
Fundamental and Dynamic Properties of Semiconductor Lasers
Proc. SPIE 2886, Interdiffusion effect on the gain of InGaAs/InP quantum well laser, 0000 (24 September 1996); doi: 10.1117/12.251880
Proc. SPIE 2886, Effect of carriers on the optical properties of AlGaAs/GaAs interdiffused quantum well lasers, 0000 (24 September 1996); doi: 10.1117/12.251881
Semiconductor Lasers and Applications
Proc. SPIE 2886, OICETS optical link communications experiment in space, 0000 (24 September 1996); doi: 10.1117/12.251882
Poster Session
Proc. SPIE 2886, New coupled mode analysis of gain coupled DFB lasers, 0000 (24 September 1996); doi: 10.1117/12.251883
Single-Mode Semiconductor Lasers
Proc. SPIE 2886, Coupled mode analysis of second order loss-coupled DFB lasers, 0000 (24 September 1996); doi: 10.1117/12.251884
Fundamental and Dynamic Properties of Semiconductor Lasers
Proc. SPIE 2886, Dynamical and coherent characteristics of semiconductor lasers with external optical feedback, 0000 (24 September 1996); doi: 10.1117/12.251885
Proc. SPIE 2886, Cellular automata analysis of the structure of carrier lifetime and its multicausal nonlinear dependence in semiconductor lasers, 0000 (24 September 1996); doi: 10.1117/12.251886
Reliability of Semiconductor Lasers
Proc. SPIE 2886, Reliability of high-power AlGaAs/GaAs QW laser diodes, 0000 (24 September 1996); doi: 10.1117/12.251887
Poster Session
Proc. SPIE 2886, Semiconductor lasers in China, 0000 (24 September 1996); doi: 10.1117/12.251888
Vertical Cavity Surface Emitting Lasers
Proc. SPIE 2886, Far-field control of vertical cavity surface emitting lasers, 0000 (24 September 1996); doi: 10.1117/12.251889
Poster Session
Proc. SPIE 2886, Generation of transform-limited picosecond pulses from active mode-locked laser diodes with an external Fabry-Perot interferometer, 0000 (24 September 1996); doi: 10.1117/12.251890
Proc. SPIE 2886, Iterative solution for laser simulator range, 0000 (24 September 1996); doi: 10.1117/12.251891
Semiconductor Lasers and Applications
Proc. SPIE 2886, Laser diode in combination with position-sensitive device forms a new model of liquid concentration sensor, 0000 (24 September 1996); doi: 10.1117/12.251892
Poster Session
Proc. SPIE 2886, Visible photo- and electro-luminescence from laser-crystallized a-Si:H and its based multilayers, 0000 (24 September 1996); doi: 10.1117/12.251893
Visible Diodes
Proc. SPIE 2886, Blue light emission from hydrogenated amorphous silicon carbide produced by organic source, 0000 (24 September 1996); doi: 10.1117/12.251894
Vertical Cavity Surface Emitting Lasers
Proc. SPIE 2886, VCSEL array fabricated by selective etching and selective oxidation, 0000 (24 September 1996); doi: 10.1117/12.251895
Single-Mode Semiconductor Lasers
Proc. SPIE 2886, Design and fabrication of a novel complex-coupled MQW-DFB laser by way of modulated distribution of injection current, 0000 (24 September 1996); doi: 10.1117/12.251896
Poster Session
Proc. SPIE 2886, Temperature dependence of upconversion luminescence from Pr3+,Er3+, and Yb3+ codoped ZBLAN glass pumped by laser diode, 0000 (24 September 1996); doi: 10.1117/12.251897
Proc. SPIE 2886, Binary optics for elliptical Gaussian beam to circular flattop beam transformation, 0000 (24 September 1996); doi: 10.1117/12.251898
High-Power Lasers
Proc. SPIE 2886, High-power GRIN-SCH lasers with low-threshold-current density and high efficiency, 0000 (24 September 1996); doi: 10.1117/12.251899
Mid-IR Semiconductor Lasers
Proc. SPIE 2886, Self-aligned processing techniques for semiconductor stripe lasers, 0000 (24 September 1996); doi: 10.1117/12.251900
Poster Session
Proc. SPIE 2886, Design and fabrication of 980-nm InGaAs/A1GaAs quantum well lasers with low beam divergence, 0000 (24 September 1996); doi: 10.1117/12.251901
Vertical Cavity Surface Emitting Lasers
Proc. SPIE 2886, Low-threshold-current InGaAs vertical cavity surface emitting laser with reverse mesa structure, 0000 (24 September 1996); doi: 10.1117/12.251902
Poster Session
Proc. SPIE 2886, Experimental investigation of the doping profile and structure of InGaAsP/InP multiple quantum wells after rapid thermal annealing, 0000 (24 September 1996); doi: 10.1117/12.251903
Proc. SPIE 2886, Strained InGaAs ridge quantum wires structure grown by molecular beam epitaxy on nonplanar substrate, 0000 (24 September 1996); doi: 10.1117/12.251904
Proc. SPIE 2886, MBE growth of low-threshold-current InGaAs VCSEL structure, 0000 (24 September 1996); doi: 10.1117/12.251905
Proc. SPIE 2886, Stimulated emission, laser oscillation, and its transient time relation in Zn0.8Cd0.2Se-ZnSe strained layer superlattice, 0000 (24 September 1996); doi: 10.1117/12.251906
Visible Diodes
Proc. SPIE 2886, Optically pumped ZnSe-ZnS MQWs blue vertical cavity surface emitting lasers, 0000 (24 September 1996); doi: 10.1117/12.251907
High-Power Lasers
Proc. SPIE 2886, LPE growth of high-power InGaAsP/GaAs SCH SQW lasers, 0000 (24 September 1996); doi: 10.1117/12.251908
Poster Session
Proc. SPIE 2886, Wafer bonding technique for fabricating 1.5-um InGaAs/InGaAsP pillar-free microdisk lasers, 0000 (24 September 1996); doi: 10.1117/12.251909
High-Power Lasers
Proc. SPIE 2886, Operating characteristics of Al-free InGaAsP/GaAs single quantum well high-power laser, 0000 (24 September 1996); doi: 10.1117/12.251910
Semiconductor Lasers and Applications
Proc. SPIE 2886, Laser diode in a coherent resolved interferometer, 0000 (24 September 1996); doi: 10.1117/12.251911
Poster Session
Proc. SPIE 2886, Optimizing operation of phase conpensation using semiconductor optical amplifiers, 0000 (24 September 1996); doi: 10.1117/12.251912
Proc. SPIE 2886, AlInGaAs/AlGaAs strained material and strained quantum well lasers grown by MBE, 0000 (24 September 1996); doi: 10.1117/12.251913
Semiconductor Lasers and Applications
Proc. SPIE 2886, Measuring of object vibration using sinusoidal-modulation laser-diode active interferometer, 0000 (24 September 1996); doi: 10.1117/12.251914
Poster Session
Proc. SPIE 2886, Lock frequency of LD by grating in frequency-doubled blue lasers, 0000 (24 September 1996); doi: 10.1117/12.251915
Proc. SPIE 2886, 1.48-um InGaAs/InGaAsP separated confinement strained layer multiple quantum well lasers, 0000 (24 September 1996); doi: 10.1117/12.251916
Single-Mode Semiconductor Lasers
Proc. SPIE 2886, High-performance 1.3-um laser diode by LP-MOVPE, 0000 (24 September 1996); doi: 10.1117/12.251917
Poster Session
Proc. SPIE 2886, Beam shape and extinction function for laser simulators, 0000 (24 September 1996); doi: 10.1117/12.251918
Proc. SPIE 2886, Investigation of quantum well lasers which have superlattice buffer layer, 0000 (24 September 1996); doi: 10.1117/12.251919
Proc. SPIE 2886, Application of Zn diffusion in reducing the series resistance of the P-distributed Bragg reflector in GaAs/GaA1As vertical cavity surface emitting lasers, 0000 (24 September 1996); doi: 10.1117/12.251920
Proc. SPIE 2886, MBE growth of high-quality GaAs heterostructures for optoelectronic devices, 0000 (24 September 1996); doi: 10.1117/12.251921
Proc. SPIE 2886, 0.808-um InGaAsP/GaAs SCH lasers, 0000 (24 September 1996); doi: 10.1117/12.251922
Proc. SPIE 2886, Deep levels in HgCdTe photodetectors, 0000 (24 September 1996); doi: 10.1117/12.251923
Proc. SPIE 2886, High-power 980-nm strained InGaAs/AlGaAs/GaAs quantum well laser, 0000 (24 September 1996); doi: 10.1117/12.251924
Fundamental and Dynamic Properties of Semiconductor Lasers
Proc. SPIE 2886, Studies of self-locking high-speed double photon switch, 0000 (24 September 1996); doi: 10.1117/12.251925
Poster Session
Proc. SPIE 2886, Effects of increasing absorption and amplification in semiconductor optical bistable system, 0000 (24 September 1996); doi: 10.1117/12.251926
Proc. SPIE 2886, Simulation of fiber communication systems with semiconductor microcavity lasers as light transmitters, 0000 (24 September 1996); doi: 10.1117/12.251927
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