PHOTONICS WEST '97
8-14 February 1997
San Jose, CA, United States
Infrared Photodetectors I
Proc. SPIE 2999, State of infrared photodetectors and materials, 0000 (15 April 1997); doi: 10.1117/12.271169
Proc. SPIE 2999, Radiative lifetime in semiconductors: influence of photon recycling, 0000 (15 April 1997); doi: 10.1117/12.271179
Proc. SPIE 2999, GaInAsSb and InAsSbP photodetectors for mid-infrared wavelengths, 0000 (15 April 1997); doi: 10.1117/12.271198
Proc. SPIE 2999, Isothermal vapor phase epitaxy as a versatile technology for infrared photodetectors, 0000 (15 April 1997); doi: 10.1117/12.271208
Infrared Photodetectors II
Proc. SPIE 2999, Sb-based infrared materials and photodetectors for the near-room-temperature applications, 0000 (15 April 1997); doi: 10.1117/12.271212
Photodiodes for Optical Communication I
Proc. SPIE 2999, Improvement of avalanche photodetectors through integration of InGaAs and Si, 0000 (15 April 1997); doi: 10.1117/12.271213
Proc. SPIE 2999, Techniques for the design and simulation of interdigitated MSM photodetectors, 0000 (15 April 1997); doi: 10.1117/12.271170
Proc. SPIE 2999, Equivalent circuit modeling of metal-semiconductor-metal photodiodes with transparent conductor electrodes, 0000 (15 April 1997); doi: 10.1117/12.271171
Poster Session
Proc. SPIE 2999, MSM-photodetectors with corrugated metal-semiconductor-interface based on III-V semiconductors, 0000 (15 April 1997); doi: 10.1117/12.271172
Proc. SPIE 2999, Comparative study of surface-plasma enhanced-grating coupled detectors, 0000 (15 April 1997); doi: 10.1117/12.271173
Proc. SPIE 2999, Monolithically integrated resonant-cavity photodetectors for measurement and feedback control of spontaneous and stimulated emission, 0000 (15 April 1997); doi: 10.1117/12.271174
Proc. SPIE 2999, High-performance guard ring p-i-n photodetectors for digital fiber optic communications, 0000 (15 April 1997); doi: 10.1117/12.271175
Proc. SPIE 2999, Time dependence of the magnetization in Ba2Sr2CaCu2Ox single crystal under zero field cooled condition, 0000 (15 April 1997); doi: 10.1117/12.271176
Proc. SPIE 2999, Normal-incidence infrared modulators based on InAs/GaSb/AlSb quantum wells grown by molecular beam epitaxy, 0000 (15 April 1997); doi: 10.1117/12.271177
Quantum Well Infrared Photodetectors I
Proc. SPIE 2999, Improved performance III-V quantum well IR photodetectors: review of current and potential focal plane technology, 0000 (15 April 1997); doi: 10.1117/12.271178
Proc. SPIE 2999, Optical coupling mechanisms in quantum well infrared photodetectors, 0000 (15 April 1997); doi: 10.1117/12.271180
Proc. SPIE 2999, Simplified quantum well infrared photodetectors, 0000 (15 April 1997); doi: 10.1117/12.271181
Proc. SPIE 2999, Dry etching processes for fabrication of QWIPs and other detector structures, 0000 (15 April 1997); doi: 10.1117/12.271182
Quantum Well Infrared Photodetectors II
Proc. SPIE 2999, Effect of compressive strain on the performance of p-type quantum well infrared photodetectors, 0000 (15 April 1997); doi: 10.1117/12.271183
Proc. SPIE 2999, Very long wavelength GaAs/GaInP quantum well infrared photodetectors, 0000 (15 April 1997); doi: 10.1117/12.271184
Infrared Photodetectors I
Proc. SPIE 2999, Pixelless infrared-imaging device concept, 0000 (15 April 1997); doi: 10.1117/12.271185
Quantum Well Infrared Photodetectors II
Proc. SPIE 2999, Can coupling with remote conduction bands cause a sufficient normal-incidence absorption in n-type direct-gap semiconductor quantum wells?, 0000 (15 April 1997); doi: 10.1117/12.271186
Photodiodes for Optical Communication II
Proc. SPIE 2999, High-efficiency high-speed (60-GHz) InGaAsP multimode waveguide photodetectors, 0000 (15 April 1997); doi: 10.1117/12.271187
Proc. SPIE 2999, InP photodetectors for millimeter wave applications based on edge-coupled heterojunction phototransistors, 0000 (15 April 1997); doi: 10.1117/12.271188
Proc. SPIE 2999, Wide-spectral response photodetectors based on microcrystalline hydrogenated silicon thin films, 0000 (15 April 1997); doi: 10.1117/12.271189
Proc. SPIE 2999, Noise analysis of the detection unit pixel a-Si:H, 0000 (15 April 1997); doi: 10.1117/12.271190
Near-Infrared Photodetectors
Proc. SPIE 2999, High-quantum-efficiency 2.2-um InGaAs MOCVD photodiodes, 0000 (15 April 1997); doi: 10.1117/12.271191
Proc. SPIE 2999, Monolithic InGaAs-on-silicon shortwave infrared detector arrays, 0000 (15 April 1997); doi: 10.1117/12.271192
Proc. SPIE 2999, Monolithic active pixel InGaAs focal plane arrays for near-infrared imaging, 0000 (15 April 1997); doi: 10.1117/12.271193
Proc. SPIE 2999, Photodetectors of slit and sandwich types based on CdS and CdS1-xSex films obtained using MOCVD method from dithiocarbamates, 0000 (15 April 1997); doi: 10.1117/12.271194
UV Photodetectors I
Proc. SPIE 2999, Requirements and design considerations of UV and x-ray detectors for astronomical purposes, 0000 (15 April 1997); doi: 10.1117/12.271195
Proc. SPIE 2999, AlGaN ultraviolet detectors, 0000 (15 April 1997); doi: 10.1117/12.271196
Proc. SPIE 2999, Advances in astronomical UV image sensors and associated technologies, 0000 (15 April 1997); doi: 10.1117/12.271197
UV Photodetectors II
Proc. SPIE 2999, Growth models of GaN thin films based on crystal chemistry: hexagonal and cubic GaN on Si substrates, 0000 (15 April 1997); doi: 10.1117/12.271199
UV Photodetectors I
Proc. SPIE 2999, Intrinsic AlxGa1-xN photodetectors for the entire compositional range, 0000 (15 April 1997); doi: 10.1117/12.271200
UV Photodetectors II
Proc. SPIE 2999, High-sensitivity photodetectors made with charge-transfer polymer blends, 0000 (15 April 1997); doi: 10.1117/12.271201
High-Temperature Superconductors I
Proc. SPIE 2999, Highly sensitive and wideband optical detector in patterned YBa2Cu3O7-d thin film, 0000 (15 April 1997); doi: 10.1117/12.271202
Proc. SPIE 2999, Wavelength-selective photodetectors based on dye-superconductor assemblies, 0000 (15 April 1997); doi: 10.1117/12.271203
Proc. SPIE 2999, Case for superconductivity associated primarily with charge-reservoirs rather than cuprate planes, 0000 (15 April 1997); doi: 10.1117/12.271204
Proc. SPIE 2999, Room-temperature operation of a YBaCuO microbolometer, 0000 (15 April 1997); doi: 10.1117/12.271205
High-Temperature Superconductors II
Proc. SPIE 2999, Terahertz radiation from high-Tc superconducting films excited by femtosecond optical pulses, 0000 (15 April 1997); doi: 10.1117/12.271206
Proc. SPIE 2999, Spectral-component monitoring and control of pulsed laser deposition of YBCO films, 0000 (15 April 1997); doi: 10.1117/12.271207
UV Photodetectors II
Proc. SPIE 2999, Growth of III-nitrides for photodetector applications, 0000 (15 April 1997); doi: 10.1117/12.271209
Quantum Well Infrared Photodetectors II
Proc. SPIE 2999, Nonlinear photoresponse of quantum well infrared photodetectors at high-excitation power, 0000 (15 April 1997); doi: 10.1117/12.271210
Infrared Photodetectors II
Proc. SPIE 2999, Design issues relating to low-temperature dark current in quantum well infrared photodetectors, 0000 (15 April 1997); doi: 10.1117/12.271211
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