PROCEEDINGS VOLUME 3002
PHOTONICS WEST '97 | 8-14 FEBRUARY 1997
Light-Emitting Diodes: Research, Manufacturing, and Applications
IN THIS VOLUME

0 Sessions, 25 Papers, 0 Presentations
Organic LEDs  (4)
PHOTONICS WEST '97
8-14 February 1997
San Jose, CA, United States
Wide-Gap Emitters
Proc. SPIE 3002, Nitride-based emitters on SiC substrates, 0000 (4 April 1997); doi: 10.1117/12.271027
Proc. SPIE 3002, Pulsed electrochemical etching of InGaN/GaN LED material, 0000 (4 April 1997); doi: 10.1117/12.271037
Proc. SPIE 3002, Current transport and emission mechanisms in high-brightness green InGaN/AlGaN/GaN single-quantum-well light-emitting diodes, 0000 (4 April 1997); doi: 10.1117/12.271044
Proc. SPIE 3002, Present performance of InGaN-based blue/green/yellow LEDs, 0000 (4 April 1997); doi: 10.1117/12.271048
Proc. SPIE 3002, Relevance of the GaN yellow luminescence for light-emitting diodes, 0000 (4 April 1997); doi: 10.1117/12.271049
Resonant Cavity LEDs
Proc. SPIE 3002, Resonant cavity light-emitting diodes, 0000 (4 April 1997); doi: 10.1117/12.271050
Proc. SPIE 3002, Resonant cavity LEDs by lateral epitaxy, 0000 (4 April 1997); doi: 10.1117/12.271051
Organic LEDs
Proc. SPIE 3002, Materials and modeling for organic light-emitting diodes, 0000 (4 April 1997); doi: 10.1117/12.271028
Proc. SPIE 3002, Efficiency enhancements of microcavity organic light-emitting diodes, 0000 (4 April 1997); doi: 10.1117/12.271029
Proc. SPIE 3002, Channel-type electroluminescent polymer device, 0000 (4 April 1997); doi: 10.1117/12.271030
Proc. SPIE 3002, Electrode interface effects on ITO/polymer/metal light emitting diodes, 0000 (4 April 1997); doi: 10.1117/12.271031
Semiconductor LEDs I
Proc. SPIE 3002, Light-emitting diode extraction efficiency, 0000 (4 April 1997); doi: 10.1117/12.271033
Proc. SPIE 3002, Epitaxial growth technologies for HB-LED manufacturing, 0000 (4 April 1997); doi: 10.1117/12.271034
Proc. SPIE 3002, Light-emitting diodes for the 1.7-2.4 um wavelengths, 0000 (4 April 1997); doi: 10.1117/12.271035
Semiconductor LEDs II
Proc. SPIE 3002, High-luminance LEDs replace incandescent lamps in new applications, 0000 (4 April 1997); doi: 10.1117/12.271036
Communication LEDs
Proc. SPIE 3002, Free-space optical interconnect and processing demonstrators with arrays of light-emitting thyristors, 0000 (4 April 1997); doi: 10.1117/12.271038
Proc. SPIE 3002, High-speed surface-light-emitting diodes for data communication applications, 0000 (4 April 1997); doi: 10.1117/12.271039
Proc. SPIE 3002, Confocal imaging with diffractive optics and broadband light sources, 0000 (4 April 1997); doi: 10.1117/12.271040
Er-doped LEDs
Proc. SPIE 3002, Silicon for photonics, 0000 (4 April 1997); doi: 10.1117/12.271041
Proc. SPIE 3002, Influence of impurities on luminescence of Er-doped silicon structures, 0000 (4 April 1997); doi: 10.1117/12.271042
Resonant Cavity LEDs
Proc. SPIE 3002, Photonic crystal light-emitting diodes, 0000 (4 April 1997); doi: 10.1117/12.271043
Communication LEDs
Proc. SPIE 3002, Monolithic OEICs using GaAs VLSI technology, 0000 (4 April 1997); doi: 10.1117/12.271045
Wide-Gap Emitters
Proc. SPIE 3002, GaInN/GaN multiple quantum wells green LEDs, 0000 (4 April 1997); doi: 10.1117/12.271046
Resonant Cavity LEDs
Proc. SPIE 3002, Planar substrate-emitting-microcavity light-emitting diodes with 20% external QE, 0000 (4 April 1997); doi: 10.1117/12.271047
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