PROCEEDINGS VOLUME 3004
PHOTONICS WEST '97 | 8-14 FEBRUARY 1997
Fabrication, Testing, and Reliability of Semiconductor Lasers II
IN THIS VOLUME

0 Sessions, 18 Papers, 0 Presentations
PHOTONICS WEST '97
8-14 February 1997
San Jose, CA, United States
Novel Devices and Fabrication Processes
Proc. SPIE 3004, WDM laser arrays with 2-nm channel spacing fabricated using a grating phase mask, 0000 (1 May 1997); doi: 10.1117/12.273819
Proc. SPIE 3004, Highly efficient 808-nm-range Al-free lasers by gas source MBE, 0000 (1 May 1997); doi: 10.1117/12.273828
Proc. SPIE 3004, Strain-compensated InGaAs/GaAsP/InGaP laser, 0000 (1 May 1997); doi: 10.1117/12.273832
Proc. SPIE 3004, VCSELs for 640- to 1100-nm emission, 0000 (1 May 1997); doi: 10.1117/12.273833
Proc. SPIE 3004, Semiconductor optical amplifier for wavelength conversion in subcarrier multiplexed systems, 0000 (1 May 1997); doi: 10.1117/12.273834
Proc. SPIE 3004, Grating-coupled surface emitters with built-in beam control, 0000 (1 May 1997); doi: 10.1117/12.273835
Device Testing and Reliability I
Proc. SPIE 3004, Operational stability of 980-nm pump lasers at 200 mW and above, 0000 (1 May 1997); doi: 10.1117/12.273836
Proc. SPIE 3004, Some quality issues of low-cost 1300-nm laser diodes packaged in receptacles, 0000 (1 May 1997); doi: 10.1117/12.273820
Proc. SPIE 3004, Electrostatic discharge damage to pump lasers while operating, 0000 (1 May 1997); doi: 10.1117/12.273821
Proc. SPIE 3004, Vertical-cavity surface-emitting lasers: the applications, 0000 (1 May 1997); doi: 10.1117/12.273822
Proc. SPIE 3004, Reliability of a 1550-nm MQW DFB high-power laser source, 0000 (1 May 1997); doi: 10.1117/12.273823
Proc. SPIE 3004, Life testing and failure analysis of GaN/AlGaN/InGaN light-emitting diodes, 0000 (1 May 1997); doi: 10.1117/12.273824
Device Testing and Reliability II
Proc. SPIE 3004, Characteristics of VCSELs and VCSEL arrays for optical data links, 0000 (1 May 1997); doi: 10.1117/12.273825
Proc. SPIE 3004, Aging behavior of high-power laser arrays monitored by photocurrent spectroscopy, 0000 (1 May 1997); doi: 10.1117/12.273826
Proc. SPIE 3004, EBIC and TEM analysis of catastrophic optical damage in high-power GaAlAs/GaInAs lasers, 0000 (1 May 1997); doi: 10.1117/12.273827
Proc. SPIE 3004, High-speed characteristics of VCSELs, 0000 (1 May 1997); doi: 10.1117/12.273829
Proc. SPIE 3004, Longitudinally resolved measurements of carrier concentration and gain in 980-nm InGaAs/GaAs high-power quantum well lasers, 0000 (1 May 1997); doi: 10.1117/12.273830
Proc. SPIE 3004, Use of silicon Vee groove technology in the design and volume manufacture of optical devices, 0000 (1 May 1997); doi: 10.1117/12.273831
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