Growth and Characterization of OEICS
Proc. SPIE 3006, Laser devices by selective-area epitaxy, 0000 (22 January 1997); doi: 10.1117/12.264213
Proc. SPIE 3006, Al-based thermal oxides in vertical cavity surface emitting lasers, 0000 (22 January 1997); doi: 10.1117/12.264224
Proc. SPIE 3006, Wafer bonding technology and its optoelectronic applications, 0000 (22 January 1997); doi: 10.1117/12.264243
Avalanche and Metal-Semiconductor-Metal Photodetectors
Proc. SPIE 3006, Design of InGaAs/Si avalanche photodetectors for 400-GHz gain-bandwidth product, 0000 (22 January 1997); doi: 10.1117/12.264251
Proc. SPIE 3006, High-speed resonant-cavity avalanche photodiodes with separate absorption and multiplication regions, 0000 (22 January 1997); doi: 10.1117/12.264252
Proc. SPIE 3006, Engineering the Schottky barrier heights in InGaAs metal-semiconductor-metal photodetectors, 0000 (22 January 1997); doi: 10.1117/12.264253
Proc. SPIE 3006, Wavelength detector using monolithically integrated subwavelength metal-semiconductor-metal photodetectors, 0000 (22 January 1997); doi: 10.1117/12.264254
Proc. SPIE 3006, GaAs metal-semiconductor-metal photodector mixers for microwave single-sideband modulation, 0000 (22 January 1997); doi: 10.1117/12.264204
Proc. SPIE 3006, High-efficiency and high-speed metal-semiconductor-metal photodetectors on Si-on-insulator substrates with buried backside reflectors, 0000 (22 January 1997); doi: 10.1117/12.264205
Advanced Photodetectors for Fiber Optic Links
Proc. SPIE 3006, Progress in normal-incidence III-V quantum well infrared photodetectors, 0000 (22 January 1997); doi: 10.1117/12.264206
Proc. SPIE 3006, High-power high-speed velocity-matched distributed photodetectors, 0000 (22 January 1997); doi: 10.1117/12.264207
Optoelectronic Integrated Circuits I
Proc. SPIE 3006, Optoelectronic pseudomorphic high-electron-mobility transistors, 0000 (22 January 1997); doi: 10.1117/12.264208
Proc. SPIE 3006, Monolithic integration of heterojunction bipolar transistors and quantum well modulators on InP: growth optimization, 0000 (22 January 1997); doi: 10.1117/12.264209
Proc. SPIE 3006, Novel approach for integration of an AlGaAs/GaAs heterojunction bipolar transistor with an InGaAs quantum well laser, 0000 (22 January 1997); doi: 10.1117/12.264210
Proc. SPIE 3006, Monolithic multiwavelength lasers for WDM lightwave systems, 0000 (22 January 1997); doi: 10.1117/12.264211
Proc. SPIE 3006, 1.55-um multiple-quantum-well laser and heterojunction bipolar transistor fabricated from the same structure utilizing zinc diffusion, 0000 (22 January 1997); doi: 10.1117/12.264212
Optoelectronic Integrated Circuits II
Proc. SPIE 3006, Recent progress in AlGaN/GaN-based optoelectronic devices, 0000 (22 January 1997); doi: 10.1117/12.264214
Proc. SPIE 3006, Device structures and materials for organic light-emitting diodes, 0000 (22 January 1997); doi: 10.1117/12.264215
Proc. SPIE 3006, Monolithic InGaAs JFET active-pixel tunable image sensor (MAPTIS), 0000 (22 January 1997); doi: 10.1117/12.264216
Proc. SPIE 3006, Technologies for large scale InP-based optoelectronic integrated circuits, 0000 (22 January 1997); doi: 10.1117/12.264217
Integrated Laser-Modulators
Proc. SPIE 3006, Wavelength division multiplexed (WDM) electroabsorption modulated laser fabricated by selective area growth MOVPE techniques, 0000 (22 January 1997); doi: 10.1117/12.264218
Proc. SPIE 3006, Modeling and experiment of 1.55-um integrated electroabsorption modulator with distributed-feedback laser, 0000 (22 January 1997); doi: 10.1117/12.264219
Proc. SPIE 3006, Integration of GaAs/AlGaAs SQW laser and MQW modulator via a tapered waveguide interconnect without regrowth, 0000 (22 January 1997); doi: 10.1117/12.264220
Proc. SPIE 3006, Theoretical and experimental studies on large-bandwidth 1.55-um integrated InP-based strained MQW laser-modulators, 0000 (22 January 1997); doi: 10.1117/12.264221
Optoelectronic Transceivers and All-Optical Devices
Proc. SPIE 3006, Integrated coherent transceivers for broadband access networks, 0000 (22 January 1997); doi: 10.1117/12.264222
Proc. SPIE 3006, 1.55-um optical phase-locked loop operation with large loop delays and monolithically integrated p-i-n/HBT photoreceivers, 0000 (22 January 1997); doi: 10.1117/12.264223
Proc. SPIE 3006, Linearized optical transmitter with modified feedback technique, 0000 (22 January 1997); doi: 10.1117/12.264225
Proc. SPIE 3006, High-density broadband true-time-delay unit on a single substrate, 0000 (22 January 1997); doi: 10.1117/12.264226
Proc. SPIE 3006, All-optical devices realized by the post-growth processing of multiquantum-well structures, 0000 (22 January 1997); doi: 10.1117/12.264227
Proc. SPIE 3006, GaAs/AlGaAs traveling-wave electro-optic modulators, 0000 (22 January 1997); doi: 10.1117/12.264228
High-Speed Modulators
Proc. SPIE 3006, Ultrahigh-speed MQW electroabsorption modulators with integrated waveguides, 0000 (22 January 1997); doi: 10.1117/12.264229
Proc. SPIE 3006, Microwave structures for traveling-wave MQW electroabsorption modulators for wideband 1.3-um photonic links, 0000 (22 January 1997); doi: 10.1117/12.264230
Proc. SPIE 3006, Materials reliability for high-speed lithium niobate modulators, 0000 (22 January 1997); doi: 10.1117/12.264231
Proc. SPIE 3006, High-bandwidth polymer modulators, 0000 (22 January 1997); doi: 10.1117/12.264232
Polymer Characterization and Devices for Optical Systems
Proc. SPIE 3006, Cross-linked polyimides for integrated optics, 0000 (22 January 1997); doi: 10.1117/12.264233
Proc. SPIE 3006, Integrated-optical M x N (M=4, N=8) space switch consisting of phased array optical beam steering devices in electro-optic polymer, 0000 (22 January 1997); doi: 10.1117/12.264234
Proc. SPIE 3006, Advanced polymer systems for optoelectronic integrated circuit applications, 0000 (22 January 1997); doi: 10.1117/12.264235
Proc. SPIE 3006, Polymer fibers as optical device components, 0000 (22 January 1997); doi: 10.1117/12.264236
OEIC Modules: Design and Simulation
Proc. SPIE 3006, OE-Spice: a CAD tool for design and simulation of OEIC, 0000 (22 January 1997); doi: 10.1117/12.264237
Proc. SPIE 3006, Modeling and simulation of optoelectronic multichip modules using VHDL, 0000 (22 January 1997); doi: 10.1117/12.264238
Integrated Optical Waveguides: Fabrication and Characterization
Proc. SPIE 3006, Photoelastic waveguides formed on bulk GaAs or Si, 0000 (22 January 1997); doi: 10.1117/12.264239
Proc. SPIE 3006, Photoinscription of channel waveguides and grating couplers in azobenzene polymer thin films, 0000 (22 January 1997); doi: 10.1117/12.264240
Proc. SPIE 3006, Erbium-doped glass-ridge waveguides fabricated with a collimated magnetron sputter deposition process, 0000 (22 January 1997); doi: 10.1117/12.264241
Proc. SPIE 3006, Design and analysis of wide-angle Y-branch waveguide with low losses for integrated optics, 0000 (22 January 1997); doi: 10.1117/12.264242
Proc. SPIE 3006, Design considerations for connectors of integrated optical strip waveguides to single-mode fiber arrays, 0000 (22 January 1997); doi: 10.1117/12.264244
Proc. SPIE 3006, Inverse poling techniques in crosslinkable polymer electro-optic materials, 0000 (22 January 1997); doi: 10.1117/12.264245
Polymer Characterization and Devices for Optical Systems
Proc. SPIE 3006, High-performance electro-optic polymers and their applications in high-speed electro-optic switches and modulators, 0000 (22 January 1997); doi: 10.1117/12.264246
Proc. SPIE 3006, Preparation of chi(2)-inverted waveguides with poled polymers for efficient second-harmonic generation, 0000 (22 January 1997); doi: 10.1117/12.264247
Proc. SPIE 3006, High-performance electro-optic polymers for high-frequency modulators, 0000 (22 January 1997); doi: 10.1117/12.264248
Proc. SPIE 3006, Progress in optoelectronic polymers and devices, 0000 (22 January 1997); doi: 10.1117/12.264249
High-Speed Modulators
Proc. SPIE 3006, Novel high-frequency electroabsorption multiple-quantum-well waveguide modulator operating at 1.3 um on GaAs substrates, 0000 (22 January 1997); doi: 10.1117/12.264250
Back to Top