PROCEEDINGS VOLUME 3007
PHOTONICS WEST '97 | 8-14 FEBRUARY 1997
Silicon-Based Monolithic and Hybrid Optoelectronic Devices
IN THIS VOLUME

0 Sessions, 22 Papers, 0 Presentations
PHOTONICS WEST '97
8-14 February 1997
San Jose, CA, United States
Modulators and Switches
Proc. SPIE 3007, Using the ASOC optoelectronic IC process through foundry services, 0000 (25 April 1997); doi: 10.1117/12.273837
Proc. SPIE 3007, Coupling, switching, and modulation in silicon-based optoelectronic structures, 0000 (25 April 1997); doi: 10.1117/12.273847
Proc. SPIE 3007, Silicon-on-insulator guided-wave structures for thermo-optic switching applications, 0000 (25 April 1997); doi: 10.1117/12.273853
Proc. SPIE 3007, Theoretical and experimental investigation of optical couplers in SOI, 0000 (25 April 1997); doi: 10.1117/12.273854
Proc. SPIE 3007, Simulation and analysis of silicon electro-optic modulator utilizing a three-terminal active device and integrated in a silicon-on-insulator low-loss single-mode waveguide, 0000 (25 April 1997); doi: 10.1117/12.273855
Proc. SPIE 3007, Band-gap tuning of SiGe/Si multi-quantum wells for waveguides and photodetectors, 0000 (25 April 1997); doi: 10.1117/12.273856
Photodetectors
Proc. SPIE 3007, Silicon-on-insulator integrated optic transceivers, 0000 (25 April 1997); doi: 10.1117/12.273857
Proc. SPIE 3007, Epitaxial SiGeC photodiode grown on Si substrate with response in the 1.3- to 1.55-um wavelength range, 0000 (25 April 1997); doi: 10.1117/12.273858
Proc. SPIE 3007, Si0.5Ge0.5 relaxed buffer photodetectors and low-loss polycrystalline silicon waveguides for integrated optical interconnects at L=1.3 um, 0000 (25 April 1997); doi: 10.1117/12.273838
Proc. SPIE 3007, Controlled growth of long-wavelength SiGe/Si multiple quantum well resonant-cavity photodetectors, 0000 (25 April 1997); doi: 10.1117/12.273839
Sensors, MEMS, and Novel Devices
Proc. SPIE 3007, Distributed micromachined sensor networks, 0000 (25 April 1997); doi: 10.1117/12.273840
Proc. SPIE 3007, Ultralow-cost surface-micromachined tunneling sensor, 0000 (25 April 1997); doi: 10.1117/12.273841
Proc. SPIE 3007, Planar phased-array wavelength multiplexers based on multimode interference couplers, 0000 (25 April 1997); doi: 10.1117/12.273842
Proc. SPIE 3007, Small radius bends and large angle splitters in SOI waveguides, 0000 (25 April 1997); doi: 10.1117/12.273843
Materials and Processing
Proc. SPIE 3007, Photolithography of integrated optical devices in porous glasses, 0000 (25 April 1997); doi: 10.1117/12.273844
Proc. SPIE 3007, Integrated optics in silicon: coming of age, 0000 (25 April 1997); doi: 10.1117/12.273845
Proc. SPIE 3007, Fabrication of high-quality cross-linked LD-3 nonlinear optical polymer waveguide films, 0000 (25 April 1997); doi: 10.1117/12.273846
Proc. SPIE 3007, Electrical study of crystalline silicon coimplanted with erbium and oxygen, 0000 (25 April 1997); doi: 10.1117/12.273848
Proc. SPIE 3007, Optical constants of B- and P-doped Ge1-yCy alloys on Si substrates, 0000 (25 April 1997); doi: 10.1117/12.273849
Proc. SPIE 3007, Ge1-xCx/Si heterojunction photodiode, 0000 (25 April 1997); doi: 10.1117/12.273850
Proc. SPIE 3007, Lattice modification and luminescence of dry-etched Si-Si1-xGex quantum dots, 0000 (25 April 1997); doi: 10.1117/12.273851
Proc. SPIE 3007, Fabrication of Si/Si1-xGex waveguide WDM components, 0000 (25 April 1997); doi: 10.1117/12.273852
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