PROCEEDINGS VOLUME 3014
ELECTRONIC IMAGING '97 | 8-14 FEBRUARY 1997
Active Matrix Liquid Crystal Displays Technology and Applications
ELECTRONIC IMAGING '97
8-14 February 1997
San Jose, CA, United States
Substrate and Equipment Development for AMLCDs
Proc. SPIE 3014, Glass substrates for AMLCD applications: properties and implications, 0000 (10 April 1997); doi: 10.1117/12.270278
Proc. SPIE 3014, Pure aluminum process solution for advanced LCDs, 0000 (10 April 1997); doi: 10.1117/12.270287
Proc. SPIE 3014, Single-shot excimer laser annealing: a new tool for poly-AMLCD combined with spectroscopic ellipsometry, 0000 (10 April 1997); doi: 10.1117/12.270295
Proc. SPIE 3014, Low-temperature poly-Si TFT mass production system: CMD-450 poly, 0000 (10 April 1997); doi: 10.1117/12.270296
Proc. SPIE 3014, Ion shower doping system for TFT-LCDs, 0000 (10 April 1997); doi: 10.1117/12.270297
Liquid Crystal and a-Si TFT Technology
Proc. SPIE 3014, Performance optimization of in-plane switching AM-LCDs by using systematic device simulations, 0000 (10 April 1997); doi: 10.1117/12.270298
Proc. SPIE 3014, Optimization of UV-light-modified multidomain cell for large-size TFT-LCDs, 0000 (10 April 1997); doi: 10.1117/12.270299
Proc. SPIE 3014, Anomalous interface degradation of a-Si:H TFTs during LCD lifetime, 0000 (10 April 1997); doi: 10.1117/12.270300
Proc. SPIE 3014, Self-passivated copper gates for amorphous silicon thin film transistors, 0000 (10 April 1997); doi: 10.1117/12.270301
Proc. SPIE 3014, Gated four-probe TFT structure: a new technique to measure the intrinsic performance of a-Si:H TFT, 0000 (10 April 1997); doi: 10.1117/12.270279
System Requirements and Prospects of AMLCDs
Proc. SPIE 3014, Technical requirements for next-generation TFT-LCDs, 0000 (10 April 1997); doi: 10.1117/12.270280
Proc. SPIE 3014, AMLCD applications and issues: beyond laptops and camcorders, 0000 (10 April 1997); doi: 10.1117/12.270281
Proc. SPIE 3014, Display requirements for the InfoPad: a wireless multimedia terminal, 0000 (10 April 1997); doi: 10.1117/12.270282
Proc. SPIE 3014, Projection system design: display device and system performance trade-offs, 0000 (10 April 1997); doi: 10.1117/12.270283
Low-Temperature Poly-Si Materials and Processes
Proc. SPIE 3014, Characteristics of excimer-laser-annealed polysilicon films for application in polysilicon thin film transistor devices, 0000 (10 April 1997); doi: 10.1117/12.270284
Proc. SPIE 3014, Low-temperature activation method of poly-Si films using rapid thermal annealing, 0000 (10 April 1997); doi: 10.1117/12.270285
Proc. SPIE 3014, Response surface optimization for high-performance solid-phase crystallized silicon-germanium thin film transistors, 0000 (10 April 1997); doi: 10.1117/12.270286
Proc. SPIE 3014, Effect of a silicon interlayer in low-temperature poly-SiGe thin film transistors, 0000 (10 April 1997); doi: 10.1117/12.270288
Proc. SPIE 3014, Silicides for polysilicon TFT-LCD applications, 0000 (10 April 1997); doi: 10.1117/12.270289
Polysilicon Materials and Devices Technology
Proc. SPIE 3014, High-electric-field phenomena in polycrystalline silicon thin film transistors, 0000 (10 April 1997); doi: 10.1117/12.270290
Proc. SPIE 3014, Cost modeling of low-temperature large-area polysilicon thin film transistor liquid crystal display manufacturing, 0000 (10 April 1997); doi: 10.1117/12.270291
Proc. SPIE 3014, Effect of barrier layer thickness on the performance of thin film transistors on glass substrates, 0000 (10 April 1997); doi: 10.1117/12.270292
Proc. SPIE 3014, Polysilicon TFTs for AMLCD applications with gate oxides grown in a low-temperature N2O plasma, 0000 (10 April 1997); doi: 10.1117/12.270293
Proc. SPIE 3014, Enhanced hydrogenation in polycrystalline Si thin films using ultrasound treatment, 0000 (10 April 1997); doi: 10.1117/12.270294
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