Mechanistic and Materials Aspects of 193-nm Resists
Proc. SPIE 3049, Role of photoacid structure on the performance of 193-nm resists, 0000 (7 July 1997); doi: 10.1117/12.275811
Proc. SPIE 3049, Function-integrated alicyclic polymer for ArF chemically amplified resists, 0000 (7 July 1997); doi: 10.1117/12.275822
Proc. SPIE 3049, Practical resists for 193-nm lithography using 2.38% TMAH: physicochemical influences on resist performance, 0000 (7 July 1997); doi: 10.1117/12.275836
Proc. SPIE 3049, Acid amplification of chemically amplified resists for 193-nm lithography, 0000 (7 July 1997); doi: 10.1117/12.275847
Lithographic Materials for 193-nm Lithography
Proc. SPIE 3049, Recent advances in 193-nm single-layer photoresists based on alternating copolymers of cycloolefins, 0000 (7 July 1997); doi: 10.1117/12.275856
Proc. SPIE 3049, New single-layer positive photoresists for 193-nm photolithography, 0000 (7 July 1997); doi: 10.1117/12.275867
Proc. SPIE 3049, Novel single-layer chemically amplified resist for 193-nm lithography, 0000 (7 July 1997); doi: 10.1117/12.275878
Proc. SPIE 3049, Novel functional nortricyclene polymers and copolymers for 248- and 193-nm chemically amplified resists, 0000 (7 July 1997); doi: 10.1117/12.275888
Poster Session: Chemically Amplified Systems
Proc. SPIE 3049, Terpolymer of maleic anhydride and cycloolefin derivatives as an ArF photoresist, 0000 (7 July 1997); doi: 10.1117/12.275898
Characterization Methods for Chemically Amplified Resists
Proc. SPIE 3049, Effect of polymer structure on dissolution-rate characteristics in carboxylated alicyclic polymers for 193-nm lithography, 0000 (7 July 1997); doi: 10.1117/12.275812
Proc. SPIE 3049, Probing the environmental stability and bake latitudes of acetal vs. ketal protected polyvinylphenol DUV resist systems, 0000 (7 July 1997); doi: 10.1117/12.275813
Proc. SPIE 3049, High-sensitivity silylation process for 193-nm lithography, 0000 (7 July 1997); doi: 10.1117/12.275814
Proc. SPIE 3049, Process techniques for improving post-exposure delay stability in chemically amplified resists, 0000 (7 July 1997); doi: 10.1117/12.275815
Proc. SPIE 3049, Modulated-temperature DSC (MT-DSC): a new technique for the extensive thermal characterization of complex chemically amplified systems, 0000 (7 July 1997); doi: 10.1117/12.275816
Modeling Aspects of Chemically Amplified Resists
Proc. SPIE 3049, Time-dependent simulation of acid and product distributions in chemically amplified resist, 0000 (7 July 1997); doi: 10.1117/12.275817
Proc. SPIE 3049, Enhancing the development-rate model for optimum simulation capability in the subhalf-micron regime, 0000 (7 July 1997); doi: 10.1117/12.275818
Proc. SPIE 3049, Photoresist development modeling based on continuity equations, 0000 (7 July 1997); doi: 10.1117/12.275819
Proc. SPIE 3049, Photoresist characterization for lithography simulation: IV. Processing effects on resist parameters, 0000 (7 July 1997); doi: 10.1117/12.275820
Materials Aspects of Chemically Amplified Resists
Proc. SPIE 3049, Non-chemically amplified 248-nm resist materials, 0000 (7 July 1997); doi: 10.1117/12.275821
Proc. SPIE 3049, Environmentally stable chemically amplified resist, 0000 (7 July 1997); doi: 10.1117/12.275823
Proc. SPIE 3049, Acid evaporation property in chemically amplified resists, 0000 (7 July 1997); doi: 10.1117/12.275827
Proc. SPIE 3049, Application of a general reaction/diffusion resist model to emerging materials with extension to nonactinic exposure, 0000 (7 July 1997); doi: 10.1117/12.275828
Proc. SPIE 3049, Deblocking reaction of chemically amplified positive DUV resists, 0000 (7 July 1997); doi: 10.1117/12.275829
Process Development of Chemically Amplified Resists
Proc. SPIE 3049, DUV resist strategy for applications of next-generation devices, 0000 (7 July 1997); doi: 10.1117/12.275831
Proc. SPIE 3049, Characterization and optimization of positive-tone DUV resists on TiN substrates, 0000 (7 July 1997); doi: 10.1117/12.275832
Proc. SPIE 3049, Design and process of a new DUV ARCH3 resist, 0000 (7 July 1997); doi: 10.1117/12.275833
Poster Session: Dissolution Inhibition Systems
Proc. SPIE 3049, Effect of salt on the dissolution of novolac in base, 0000 (7 July 1997); doi: 10.1117/12.275834
Mechanistic Aspects of Novolac/DNQ Resists
Proc. SPIE 3049, New approach to PEB mechanisms in novolac-DNQ resists: influence of physical and viscoelastic properties, 0000 (7 July 1997); doi: 10.1117/12.275835
Poster Session: New Materials and Characterization Methods
Proc. SPIE 3049, Diffusivity measurements in polymers: IV. Acid diffusion in chemically amplified resists, 0000 (7 July 1997); doi: 10.1117/12.275837
Mechanistic Aspects of Novolac/DNQ Resists
Proc. SPIE 3049, Robust i-line resist engineering using neural network and statistical design applications, 0000 (7 July 1997); doi: 10.1117/12.275838
Proc. SPIE 3049, PHS with inert blocking groups for DUV negative resist, 0000 (7 July 1997); doi: 10.1117/12.275839
Processes Using Antireflective Layers/Top-Surface Imaging
Proc. SPIE 3049, Prediction of lithographic performance of resist/BARC bilayers in topographic situations: application to organic and inorganic BARCs, 0000 (7 July 1997); doi: 10.1117/12.275840
Proc. SPIE 3049, Process effects resulting from an increased BARC thickness, 0000 (7 July 1997); doi: 10.1117/12.275841
Proc. SPIE 3049, Optimal design of antireflective layer for DUV lithography and experimental results, 0000 (7 July 1997); doi: 10.1117/12.275842
Proc. SPIE 3049, Practical implementation of top-surface imaging process by silylation to sub-0.20-um lithography, 0000 (7 July 1997); doi: 10.1117/12.275843
Poster Session: Chemically Amplified Systems
Proc. SPIE 3049, Design of a positive-tone water-soluble resist, 0000 (7 July 1997); doi: 10.1117/12.275844
Proc. SPIE 3049, Acid diffusion control in chemical amplification positive resists by exchange reaction of conjugate bases, 0000 (7 July 1997); doi: 10.1117/12.275845
Proc. SPIE 3049, High-contrast chemically amplified resist for SR lithography, 0000 (7 July 1997); doi: 10.1117/12.275846
Proc. SPIE 3049, Overview of photoacid generator design for acetal resist systems, 0000 (7 July 1997); doi: 10.1117/12.275848
Proc. SPIE 3049, Complex triarylsulfonium salts as photoacid generators for deep-UV microlithography: synthesis, identification, and lithographic characterization of key individual components, 0000 (7 July 1997); doi: 10.1117/12.275849
Proc. SPIE 3049, ArF photoresist system using alicyclic polymer, 0000 (7 July 1997); doi: 10.1117/12.275850
Proc. SPIE 3049, Reactivity and kinetic parameters for UVIIHS, 0000 (7 July 1997); doi: 10.1117/12.275851
Proc. SPIE 3049, Environmentally stable chemically amplified positive resist containing vinyllactam terpolymers, 0000 (7 July 1997); doi: 10.1117/12.275852
Proc. SPIE 3049, Laser-specific photochemistry and lithography of DNQ-4-sulfonic-acid-ester-based photoresists, 0000 (7 July 1997); doi: 10.1117/12.275853
Mechanistic Aspects of Novolac/DNQ Resists
Proc. SPIE 3049, Dissolution promotion in novolac-diazoquinone resists, 0000 (7 July 1997); doi: 10.1117/12.275854
Poster Session: Dissolution Inhibition Systems
Proc. SPIE 3049, Measurement of trace acid levels in diazonaphthoquinone photoactive compounds (PACs), 0000 (7 July 1997); doi: 10.1117/12.275855
Proc. SPIE 3049, Predicting photoactive compound (PAC) decomposition tendencies in resists, 0000 (7 July 1997); doi: 10.1117/12.275857
Proc. SPIE 3049, Evaluation of an on-site developer blending system on the variability of developer concentration, 0000 (7 July 1997); doi: 10.1117/12.275858
Proc. SPIE 3049, Synthesis of novolac resin by acid removal after condensation (ARAC) process, 0000 (7 July 1997); doi: 10.1117/12.275859
Proc. SPIE 3049, Dissolution behavior of phenolic resins and resists as studied by quartz crystal microbalance, 0000 (7 July 1997); doi: 10.1117/12.275860
Proc. SPIE 3049, Bleaching-induced changes in the dispersion curves of DNQ photoresists, 0000 (7 July 1997); doi: 10.1117/12.275861
Proc. SPIE 3049, Structure and property relationships of fractionated novolac resins, 0000 (7 July 1997); doi: 10.1117/12.275862
Proc. SPIE 3049, Novel process of isolating novolac resin fractions, 0000 (7 July 1997); doi: 10.1117/12.275863
Proc. SPIE 3049, Thermal stability of naphthodiazoquinone sensitizers, 0000 (7 July 1997); doi: 10.1117/12.275864
Poster Session: Electron-Beam/X-Ray Resists Applications
Proc. SPIE 3049, Surface tension and adhesion of photo- and electron-beam resists, 0000 (7 July 1997); doi: 10.1117/12.275865