PROCEEDINGS VOLUME 3050
MICROLITHOGRAPHY '97 | 10-14 MARCH 1997
Metrology, Inspection, and Process Control for Microlithography XI
MICROLITHOGRAPHY '97
10-14 March 1997
Santa Clara, CA, United States
Scanning Probe Metrology I
Proc. SPIE 3050, Application of statistical metrology to reduce total uncertainty in the CD SEM measurement of across-chip linewidth variation, 0000 (7 July 1997); doi: 10.1117/12.275907
Proc. SPIE 3050, Fourier transform feedback tool for scanning electron microscopes used in semiconductor metrology, 0000 (7 July 1997); doi: 10.1117/12.275917
Proc. SPIE 3050, Survey of scanning electron microscopes using quantitative resolution evaluation, 0000 (7 July 1997); doi: 10.1117/12.275930
Proc. SPIE 3050, Statistical verification of multiple CD-SEM matching, 0000 (7 July 1997); doi: 10.1117/12.275941
Registration and Overlay I
Proc. SPIE 3050, Effect of processing on the overlay performance of a wafer stepper, 0000 (7 July 1997); doi: 10.1117/12.275950
Proc. SPIE 3050, Improving metrology signal-to-noise on grainy overlay features, 0000 (7 July 1997); doi: 10.1117/12.275960
Proc. SPIE 3050, Improving the accuracy of overlay measurements through reduction in tool- and wafer-induced shifts, 0000 (7 July 1997); doi: 10.1117/12.275963
Proc. SPIE 3050, Improvement of alignment accuracy for scaled exposure field, 0000 (7 July 1997); doi: 10.1117/12.275964
Proc. SPIE 3050, Method to characterize overlay tool misalignments and distortions, 0000 (7 July 1997); doi: 10.1117/12.275965
Keynote Address
Proc. SPIE 3050, Thinking small: challenges for metrology at century's end, 0000 (7 July 1997); doi: 10.1117/12.275908
Poster Session
Proc. SPIE 3050, Effect of reticle bias on isofocal process performance at subhalfmicron resolution, 0000 (7 July 1997); doi: 10.1117/12.275909
Defect Monitoring and Modeling
Proc. SPIE 3050, Simulation of subhalfmicron-mask defect printability at 1X reticle magnification, 0000 (7 July 1997); doi: 10.1117/12.275910
Process Control and Optimization
Proc. SPIE 3050, Simulating photomask edge roughness and corner rounding, 0000 (7 July 1997); doi: 10.1117/12.275911
Scanning Probe Metrology II
Proc. SPIE 3050, Investigation of the effects of charging in SEM-based CD metrology, 0000 (7 July 1997); doi: 10.1117/12.275912
Proc. SPIE 3050, High-precision calibration of a scanning probe microscope (SPM) for pitch and overlay measurements, 0000 (7 July 1997); doi: 10.1117/12.275913
Proc. SPIE 3050, Dimensional metrology at the nanometer level: combined SEM and PPM, 0000 (7 July 1997); doi: 10.1117/12.275914
Process Control and Optimization
Proc. SPIE 3050, Scatterometric process monitor for silylation, 0000 (7 July 1997); doi: 10.1117/12.275915
Metrology Issues for Chemical Mechanical Planarization (CMP)
Proc. SPIE 3050, Importance of wafer flatness for CMP and lithography, 0000 (7 July 1997); doi: 10.1117/12.275916
Process Control and Optimization
Proc. SPIE 3050, Plasma antireflective coating optimization using enhanced reflectivity modeling, 0000 (7 July 1997); doi: 10.1117/12.275918
Defect Monitoring and Modeling
Proc. SPIE 3050, Characterization of real particle size for the process particle monitor using laser surface scanners, 0000 (7 July 1997); doi: 10.1117/12.275922
Proc. SPIE 3050, Characterization of defect detection schemes using rigorous 3D EM field simulation, 0000 (7 July 1997); doi: 10.1117/12.275923
Proc. SPIE 3050, Application of rigorous topography simulation for modeling of defect propagation/growth in VLSI fabrication, 0000 (7 July 1997); doi: 10.1117/12.275924
Optical and Electrical Metrology
Proc. SPIE 3050, Optimizing inline defect monitoring using correlation with electrical failures, 0000 (7 July 1997); doi: 10.1117/12.275925
Registration and Overlay II
Proc. SPIE 3050, Comparisons of six different intrafield control paradigms in an advanced mix-and-match environment, 0000 (7 July 1997); doi: 10.1117/12.275926
Proc. SPIE 3050, Characterizing overlay registration of concentric 5X and 1X stepper exposure fields using interfield data, 0000 (7 July 1997); doi: 10.1117/12.275927
Proc. SPIE 3050, Overlay measurements and edge detection methods, 0000 (7 July 1997); doi: 10.1117/12.275928
Proc. SPIE 3050, Basic challenges of optical overlay measurements, 0000 (7 July 1997); doi: 10.1117/12.275929
Metrology Issues for Chemical Mechanical Planarization (CMP)
Proc. SPIE 3050, Characteristics of overlay accuracy after metal CMP process, 0000 (7 July 1997); doi: 10.1117/12.275931
Scanning Probe Metrology III
Proc. SPIE 3050, Stability of glass probe tips for critical dimension measurement, 0000 (7 July 1997); doi: 10.1117/12.275932
Proc. SPIE 3050, Unique approach to high-performance magnification calibration, 0000 (7 July 1997); doi: 10.1117/12.275933
Proc. SPIE 3050, Novel near-field optical probe for 100-nm critical dimension measurements, 0000 (7 July 1997); doi: 10.1117/12.275934
Proc. SPIE 3050, Statistical measure for the sharpness of SEM images, 0000 (7 July 1997); doi: 10.1117/12.275935
Defect Detection and Analysis
Proc. SPIE 3050, Automatic classification of spatial signatures on semiconductor wafer maps, 0000 (7 July 1997); doi: 10.1117/12.275936
Proc. SPIE 3050, Advanced inspection for 0.25-um-generation semiconductor manufacturing, 0000 (7 July 1997); doi: 10.1117/12.275937
Proc. SPIE 3050, Improved defect detection performance at metal and contact etch levels using a new optical-comparison segmented-autothreshold technology, 0000 (7 July 1997); doi: 10.1117/12.275938
Proc. SPIE 3050, Detecting lithography's variations: new types of defects for automatic inspection machines, 0000 (7 July 1997); doi: 10.1117/12.275939
Poster Session
Proc. SPIE 3050, Optical characterization of attenuated phase shifters, 0000 (7 July 1997); doi: 10.1117/12.275940
Proc. SPIE 3050, Optical diffraction tomography for latent image metrology, 0000 (7 July 1997); doi: 10.1117/12.275942
Proc. SPIE 3050, Monte Carlo simulation of charging effects on linewidth metrology, 0000 (7 July 1997); doi: 10.1117/12.275943
Optical and Electrical Metrology
Proc. SPIE 3050, Resist and etched line profile characterization using scatterometry, 0000 (7 July 1997); doi: 10.1117/12.275944
Poster Session
Proc. SPIE 3050, Highly accurate CD measurement with a micro standard, 0000 (7 July 1997); doi: 10.1117/12.275945
Proc. SPIE 3050, Advanced FTIR techniques for photoresist process characterization, 0000 (7 July 1997); doi: 10.1117/12.275946
Metrology Issues for Chemical Mechanical Planarization (CMP)
Proc. SPIE 3050, CMP overlay metrology: robust performance through signal and noise improvements, 0000 (7 July 1997); doi: 10.1117/12.275947
Poster Session
Proc. SPIE 3050, Alternative method for monitoring an in-line CD SEM, 0000 (7 July 1997); doi: 10.1117/12.275948
Proc. SPIE 3050, E-beam-induced distortions on SiN x-ray mask membrane, 0000 (7 July 1997); doi: 10.1117/12.275949
Proc. SPIE 3050, Single-feature metrology by means of light scatter analysis, 0000 (7 July 1997); doi: 10.1117/12.275951
Proc. SPIE 3050, Novel approach for defect detection and reduction techniques for submicron lithography, 0000 (7 July 1997); doi: 10.1117/12.275952
Proc. SPIE 3050, Monitoring optical properties and thickness of PECVD SiON antireflective layer by spectroscopic ellipsometry, 0000 (7 July 1997); doi: 10.1117/12.275953
Proc. SPIE 3050, 3D imaging of VLSI wafer surfaces using a multiple-detector SEM, 0000 (7 July 1997); doi: 10.1117/12.275954
Scanning Probe Metrology III
Proc. SPIE 3050, Offline programming of CD-SEM systems enhances wafer fab productivity, 0000 (7 July 1997); doi: 10.1117/12.275955
Poster Session
Proc. SPIE 3050, Error estimation for lattice methods of stage self-calibration, 0000 (7 July 1997); doi: 10.1117/12.275956
Proc. SPIE 3050, Innovations in monitoring for sub-half-micron production, 0000 (7 July 1997); doi: 10.1117/12.275957
Metrology Issues for Chemical Mechanical Planarization (CMP)
Proc. SPIE 3050, CMP-compatible alignment strategy, 0000 (7 July 1997); doi: 10.1117/12.275958
Registration and Overlay I
Proc. SPIE 3050, Complementary alignment metrology: a visual technique for alignment monitoring, 0000 (7 July 1997); doi: 10.1117/12.275959
Process Control and Optimization
Proc. SPIE 3050, Precise measurement of ARC optical indices in the deep-UV range by variable-angle spectroscopic ellipsometry, 0000 (7 July 1997); doi: 10.1117/12.275961
Registration and Overlay I
Proc. SPIE 3050, Contact holes: a challenge for signal collection efficiency and measurement algorithms, 0000 (7 July 1997); doi: 10.1117/12.275962
Plenary Session
Proc. SPIE 3050, Wavefront engineering from 500-nm to 100-nm CD, 0000 (7 July 1997); doi: 10.1117/12.275919