PROCEEDINGS VOLUME 3051
MICROLITHOGRAPHY '97 | 10-14 MARCH 1997
Optical Microlithography X
MICROLITHOGRAPHY '97
10-14 March 1997
Santa Clara, CA, United States
Resolution Enhancement
Proc. SPIE 3051, Durability of experimental fused silicas to 193-nm induced compaction, 0000 (7 July 1997); doi: 10.1117/12.275966
Proc. SPIE 3051, Pattern deformation induced from intensity-unbalanced off-axis illumination, 0000 (7 July 1997); doi: 10.1117/12.275980
Proc. SPIE 3051, Optical proximity effect of a next-generation superresolution technique, 0000 (7 July 1997); doi: 10.1117/12.275993
Proc. SPIE 3051, Reduction of mask-error effect utilizing pupil filter in alternative phase-shift lithography, 0000 (7 July 1997); doi: 10.1117/12.276004
Critical Dimension Control
Proc. SPIE 3051, Understanding across chip line width variation: the first step toward optical proximity correction, 0000 (7 July 1997); doi: 10.1117/12.276015
Proc. SPIE 3051, Full-field CD control for sub-0.20-um patterning, 0000 (7 July 1997); doi: 10.1117/12.276024
Proc. SPIE 3051, Phase shifting and optical proximity corrections to improve CD control on logic devices in manufacturing for sub-0.35-um i-line, 0000 (7 July 1997); doi: 10.1117/12.276034
Proc. SPIE 3051, Characteristics of Ge-based ARL for DUV lithography, 0000 (7 July 1997); doi: 10.1117/12.276042
Advanced Masks
Proc. SPIE 3051, Effects of excimer laser radiation on attenuated phase-shift masking materials, 0000 (7 July 1997); doi: 10.1117/12.276051
Proc. SPIE 3051, DOF enhancement of isolated line patterns by newly developed assistant pattern method, 0000 (7 July 1997); doi: 10.1117/12.275967
Proc. SPIE 3051, Process latitude and CD bias evaluation of attenuated PSM, 0000 (7 July 1997); doi: 10.1117/12.275971
Proc. SPIE 3051, Yield management and reticle defects, 0000 (7 July 1997); doi: 10.1117/12.275972
Process and Manufacturing Optimization
Proc. SPIE 3051, NA/sigma optimization strategies for an advanced DUV stepper applied to 0.25- and sub-0.25-um critical levels, 0000 (7 July 1997); doi: 10.1117/12.275973
Proc. SPIE 3051, Challenge of 1-Gb DRAM development when using optical lithography, 0000 (7 July 1997); doi: 10.1117/12.275974
Proc. SPIE 3051, Application of alternating phase-shifting mask to 0.16 um CMOS logic gate patterns, 0000 (7 July 1997); doi: 10.1117/12.275975
Proc. SPIE 3051, 0.25-um multilevel interconnect with DUV processing, 0000 (7 July 1997); doi: 10.1117/12.275976
Lithography Simulation
Proc. SPIE 3051, Experimental results on optical proximity correction with variable-threshold resist model, 0000 (7 July 1997); doi: 10.1117/12.275977
Proc. SPIE 3051, Spatial-filter models to describe IC lithographic behavior, 0000 (7 July 1997); doi: 10.1117/12.275978
Proc. SPIE 3051, Effect of the partial coherence on reflective notching, 0000 (7 July 1997); doi: 10.1117/12.275979
Proc. SPIE 3051, Process-specific tuning of lithography simulation tools, 0000 (7 July 1997); doi: 10.1117/12.275981
Proc. SPIE 3051, Practical method of evaluating two-dimensional resist features for lithographic DRC, 0000 (7 July 1997); doi: 10.1117/12.275985
Image Quality
Proc. SPIE 3051, Potential causes of across field CD variation, 0000 (7 July 1997); doi: 10.1117/12.275986
Proc. SPIE 3051, Toward a comprehensive control of full-field image quality in optical photolithography, 0000 (7 July 1997); doi: 10.1117/12.275987
Proc. SPIE 3051, Overlay error of fine patterns by lens aberration using modified illumination, 0000 (7 July 1997); doi: 10.1117/12.275988
Proc. SPIE 3051, Photolithographic lens characterization of critical dimension variation using empirical focal-plane modeling, 0000 (7 July 1997); doi: 10.1117/12.275989
Optical Proximity Effects
Proc. SPIE 3051, Optical proximity effects correction at 0.25 um incorporating process variations in lithography, 0000 (7 July 1997); doi: 10.1117/12.275990
Proc. SPIE 3051, Comparison between optical proximity effect of positive and negative tone patterns in KrF lithography, 0000 (7 July 1997); doi: 10.1117/12.275991
Proc. SPIE 3051, Optical proximity correction of alternating phase-shift masks for 0.18-um KrF lithography, 0000 (7 July 1997); doi: 10.1117/12.275992
Proc. SPIE 3051, Optical proximity correction in DRAM cell using a new statistical methodology, 0000 (7 July 1997); doi: 10.1117/12.275994
Proc. SPIE 3051, Application of a simple resist model to fast optical proximity correction, 0000 (7 July 1997); doi: 10.1117/12.275995
Process and Manufacturing Optimization
Proc. SPIE 3051, Minimization of total overlay errors on product wafers using an advanced optimization scheme, 0000 (7 July 1997); doi: 10.1117/12.275996
Proc. SPIE 3051, Control and uniformity of 280-nm features in i-line lithography using optical proximity corrections and off-axis illumination, 0000 (7 July 1997); doi: 10.1117/12.275997
Proc. SPIE 3051, Use of exposure compensation to improve device performance for speed and binning based on electrical parametric feedback into fabrication design, 0000 (7 July 1997); doi: 10.1117/12.275998
Proc. SPIE 3051, Manufacturing optimization strategies for 0.35-um design rules, 0000 (7 July 1997); doi: 10.1117/12.275999
Proc. SPIE 3051, Characterization of positive DUV resists at 0.25-um polygate using organic and inorganic antireflection schemes, 0000 (7 July 1997); doi: 10.1117/12.276000
Exposure Tools and Subsystems
Proc. SPIE 3051, Micrascan III: performance of a third-generation catadioptric step-and-scan lithographic tool, 0000 (7 July 1997); doi: 10.1117/12.276001
Proc. SPIE 3051, Performance of a step-and-scan system for DUV lithography, 0000 (7 July 1997); doi: 10.1117/12.276002
Proc. SPIE 3051, Alignment strategies for planarizing technologies, 0000 (7 July 1997); doi: 10.1117/12.276003
Proc. SPIE 3051, Alignment sensor corrections for tool-induced shift (TIS), 0000 (7 July 1997); doi: 10.1117/12.276005
Proc. SPIE 3051, Six degrees of freedom Mag-Lev stage development, 0000 (7 July 1997); doi: 10.1117/12.276006
Proc. SPIE 3051, ArF excimer laser for 193-nm lithography, 0000 (7 July 1997); doi: 10.1117/12.276007
Proc. SPIE 3051, Performance of excimer lasers as light sources for 193-nm lithography, 0000 (7 July 1997); doi: 10.1117/12.276008
Proc. SPIE 3051, Solid state lasers for 193-nm photolithography, 0000 (7 July 1997); doi: 10.1117/12.276009
Proc. SPIE 3051, Subpicometer ArF excimer laser for 193-nm lithography, 0000 (7 July 1997); doi: 10.1117/12.276010
Proc. SPIE 3051, ArF excimer laser lithography using monochromatic projection lens coupled with narrowed-bandwidth laser, 0000 (7 July 1997); doi: 10.1117/12.276011
Resolution Enhancement
Proc. SPIE 3051, Experimental study on nonlinear multiple-exposure method, 0000 (7 July 1997); doi: 10.1117/12.276012
Proc. SPIE 3051, New optical imaging method for lithography and high-resolution inspections, 0000 (7 July 1997); doi: 10.1117/12.276013
Proc. SPIE 3051, Analysis of nonlinear overlay errors by aperture mixing related with pattern asymmetry, 0000 (7 July 1997); doi: 10.1117/12.276014
Critical Dimension Control
Proc. SPIE 3051, Mask CD control requirement at 0.18-um design rules for 193-nm lithography, 0000 (7 July 1997); doi: 10.1117/12.276016
Proc. SPIE 3051, Process optimization by reducing I-D bias for 0.25-um logic devices, 0000 (7 July 1997); doi: 10.1117/12.276017
Proc. SPIE 3051, Minimization of DUV multi-interference effect in 0.25-um device fabrication, 0000 (7 July 1997); doi: 10.1117/12.276018
Proc. SPIE 3051, Planarizing BARC 0.32-um i-line lithography process for the reduction of intradie CD variation, 0000 (7 July 1997); doi: 10.1117/12.276019
Proc. SPIE 3051, Process and resolution enhancement using a new inorganic bottom antireflective layer for i-line lithography, 0000 (7 July 1997); doi: 10.1117/12.276020
Proc. SPIE 3051, Line-width variation with different sublayers for 0.25-um minimum feature size in DUV lithography, 0000 (7 July 1997); doi: 10.1117/12.276021
Advanced Masks
Proc. SPIE 3051, Focused-ion-beam repair of embedded phase-shift masks, 0000 (7 July 1997); doi: 10.1117/12.276022
Proc. SPIE 3051, Simulation and optimization of phase-shift masks for dense contact patterns with i-line illumination, 0000 (7 July 1997); doi: 10.1117/12.276023
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