PROCEEDINGS VOLUME 3096
PHOTOMASK JAPAN '97 | 17-18 APRIL 1997
Photomask and X-Ray Mask Technology IV
PHOTOMASK JAPAN '97
17-18 April 1997
Kawasaki City, Japan
Photomask Process and Materials
Proc. SPIE 3096, Lithography strategies for 180-nm CMOS device fabrication, 0000 (28 July 1997); doi: 10.1117/12.277248
Proc. SPIE 3096, Plasma etching of Cr photomasks: parametric comparisons of plasma sources and process conditions, 0000 (28 July 1997); doi: 10.1117/12.277267
Proc. SPIE 3096, Thin resist performance comparison for advanced e-beam reticle fabrication, 0000 (28 July 1997); doi: 10.1117/12.277277
Equipment, Cleaning, and Pelliclization
Proc. SPIE 3096, Development of an in-situ cleaning system for an e-beam reticle writer, 0000 (28 July 1997); doi: 10.1117/12.277287
Proc. SPIE 3096, Performance improvement in e-beam reticle writer HL-800M, 0000 (28 July 1997); doi: 10.1117/12.277297
Proc. SPIE 3096, Cleaning technology of PSM for sub-quarter-micron devices, 0000 (28 July 1997); doi: 10.1117/12.277298
Proc. SPIE 3096, Development of a pellicle for use with an ArF excimer laser, 0000 (28 July 1997); doi: 10.1117/12.277299
Design Automation
Proc. SPIE 3096, Automated OPC for application in advanced lithography, 0000 (28 July 1997); doi: 10.1117/12.277300
Proc. SPIE 3096, Fast chip-level OPC system on mask database, 0000 (28 July 1997); doi: 10.1117/12.277249
Proc. SPIE 3096, Hierarchical mask data design system (PROPHET) for aerial image simulation, automatic phase-shifter placement, and subpeak overlap checking, 0000 (28 July 1997); doi: 10.1117/12.277250
Advanced Optical Lithography and Next-Generation Reticle Format
Proc. SPIE 3096, Prospects and challenges of ArF excimer laser lithography, 0000 (28 July 1997); doi: 10.1117/12.277251
Proc. SPIE 3096, Evaluating next-generation reticle demands on lithography equipment, 0000 (28 July 1997); doi: 10.1117/12.277252
Proc. SPIE 3096, Photomask fabrication feasibility for next-generation reticle format, 0000 (28 July 1997); doi: 10.1117/12.277253
Proc. SPIE 3096, Dry etching with consideration to thicker reticle size, 0000 (28 July 1997); doi: 10.1117/12.277254
Proc. SPIE 3096, Development of a new pellicle for use with the new generation reticle, 0000 (28 July 1997); doi: 10.1117/12.277255
Mask for X Ray and E-Beam
Proc. SPIE 3096, Current status of the SR stepper development, 0000 (28 July 1997); doi: 10.1117/12.277256
Proc. SPIE 3096, Antireflection and opaque coating film materials for Ta/SiC x-ray masks, 0000 (28 July 1997); doi: 10.1117/12.277257
Proc. SPIE 3096, Improving stress stability of Ta film for x-ray mask absorbers, 0000 (28 July 1997); doi: 10.1117/12.277258
Proc. SPIE 3096, Silicon projection mask-making technology for e-beam lithography, 0000 (28 July 1997); doi: 10.1117/12.277259
Phase-Shift Mask and Repair
Proc. SPIE 3096, ArF excimer-laser exposure durability of chromium-fluoride-attenuated phase-shift masks, 0000 (28 July 1997); doi: 10.1117/12.277260
Proc. SPIE 3096, Stability of CrFx films for phase-shifting mask, 0000 (28 July 1997); doi: 10.1117/12.277261
Proc. SPIE 3096, Effect of lens aberration on hole pattern fabrication using halftone phase-shifting masks, 0000 (28 July 1997); doi: 10.1117/12.277262
Proc. SPIE 3096, Development of focused-ion-beam repair for quartz defects on alternating phase-shift masks, 0000 (28 July 1997); doi: 10.1117/12.277263
Proc. SPIE 3096, Chemically enhanced focused-ion-beam (FIB) repair of opaque defects on chrome photomasks, 0000 (28 July 1997); doi: 10.1117/12.277264
Inspection and Metrology
Proc. SPIE 3096, Performance of cell-shift defect inspection technique, 0000 (28 July 1997); doi: 10.1117/12.277265
Proc. SPIE 3096, New die-to-database mask inspection system with i-line optics for 256-Mbit and 1-Gbit DRAMs, 0000 (28 July 1997); doi: 10.1117/12.277266
Proc. SPIE 3096, Application of image-processing software to characterize the photomask key parameters for future technologies, 0000 (28 July 1997); doi: 10.1117/12.277268
Proc. SPIE 3096, Advanced mask metrology system for up to 4-Gbit DRAM, 0000 (28 July 1997); doi: 10.1117/12.277269
Photomask Process and Materials
Proc. SPIE 3096, Application of charge-dispersing layer to reticle fabrication, 0000 (28 July 1997); doi: 10.1117/12.277270
Proc. SPIE 3096, CD variation sources of photomask, 0000 (28 July 1997); doi: 10.1117/12.277271
Proc. SPIE 3096, Improvement of ZEN 4100, 0000 (28 July 1997); doi: 10.1117/12.277272
Proc. SPIE 3096, Post apply bake optimization for 6025 masks, 0000 (28 July 1997); doi: 10.1117/12.277273
Mask for X Ray and E-Beam
Proc. SPIE 3096, Analysis of x-ray mask distortion, 0000 (28 July 1997); doi: 10.1117/12.277274
Proc. SPIE 3096, Repairing Ta absorber x-ray masks with gas-assisted focused-ion-beam etching, 0000 (28 July 1997); doi: 10.1117/12.277275
Proc. SPIE 3096, Mask bias effects in e-beam cell projection lithography, 0000 (28 July 1997); doi: 10.1117/12.277276
Phase-Shift Mask and Repair
Proc. SPIE 3096, Large assist feature phase-shift mask for sub-quarter-micrometer window pattern formation, 0000 (28 July 1997); doi: 10.1117/12.277278
Proc. SPIE 3096, Leaking light through embedded shifter-type opaque ring for attenuated phase-shift mask, 0000 (28 July 1997); doi: 10.1117/12.277279
Proc. SPIE 3096, Zr-based films for attenuated phase-shift mask, 0000 (28 July 1997); doi: 10.1117/12.277280
Proc. SPIE 3096, Proposal for pattern layout rule in application of alternating phase-shift mask, 0000 (28 July 1997); doi: 10.1117/12.277281
Proc. SPIE 3096, Effect of phase error on 180-nm and 250-nm grouped-line KrF lithography using an alternating phase-shift mask, 0000 (28 July 1997); doi: 10.1117/12.277282
Proc. SPIE 3096, 0.35-um i-line attenuated phase-shift mask (PSM) repair by focused-ion-beam technology, 0000 (28 July 1997); doi: 10.1117/12.277283
Proc. SPIE 3096, Focused-ion-beam (FIB) etching of quartz and carbon for Levenson mask repair, 0000 (28 July 1997); doi: 10.1117/12.277284
Inspection and Metrology
Proc. SPIE 3096, Characterization of an advanced performance reticle defect inspection algorithm, 0000 (28 July 1997); doi: 10.1117/12.277285
Proc. SPIE 3096, Image sensing method and defect detection algorithm for a 256-Mbit and 1-Gbit DRAM mask inspection system, 0000 (28 July 1997); doi: 10.1117/12.277286
Proc. SPIE 3096, Database inspection capability for the high-grade device, 0000 (28 July 1997); doi: 10.1117/12.277288
Proc. SPIE 3096, Real-time line-width measurements: a new feature for reticle inspection systems, 0000 (28 July 1997); doi: 10.1117/12.277289
Proc. SPIE 3096, Evaluation results of the novel reticle pattern defect inspection system for 1-Gbit device, 0000 (28 July 1997); doi: 10.1117/12.277290
Design Automation
Proc. SPIE 3096, Proximity effect correction for reticle fabrication, 0000 (28 July 1997); doi: 10.1117/12.277291
Proc. SPIE 3096, Automated method to check sidelobe overlap projected by adjacent apertures in attenuated phase-shift masks, 0000 (28 July 1997); doi: 10.1117/12.277292
Proc. SPIE 3096, New mask data processing system for ULSI fabrication, 0000 (28 July 1997); doi: 10.1117/12.277293
Equipment, Cleaning, and Pelliclization
Proc. SPIE 3096, Correcting method for mechanical vibration in electron-beam lithography system, 0000 (28 July 1997); doi: 10.1117/12.277294
Proc. SPIE 3096, Multipass gray printing for the new MEBES 4500S mask lithography system, 0000 (28 July 1997); doi: 10.1117/12.277295
Proc. SPIE 3096, Development of an electron-beam optical column for the mask lithography system, 0000 (28 July 1997); doi: 10.1117/12.277296
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