PROCEEDINGS VOLUME 3175
THIRD INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS | 15-17 APRIL 1997
Third International Conference on Thin Film Physics and Applications
THIRD INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS
15-17 April 1997
Shanghai, China
Plenary Session
Proc. SPIE 3175, Spectroscopic investigation of near-surface and surface quantum well structures of semiconductors, 0000 (20 February 1998); doi: 10.1117/12.300637
Proc. SPIE 3175, New developments in ophthalmic coatings on plastic lenses, 0000 (20 February 1998); doi: 10.1117/12.300648
Proc. SPIE 3175, Ion implantation in dielectric thin films for passive and active components, 0000 (20 February 1998); doi: 10.1117/12.300659
Proc. SPIE 3175, Thin film technologies for optoelectronic components in fiber optic communication, 0000 (20 February 1998); doi: 10.1117/12.300670
Structure of Films
Proc. SPIE 3175, Preparation and characterization of the quantum dot quantum well system CdS/CuS/CdS, 0000 (20 February 1998); doi: 10.1117/12.300681
Proc. SPIE 3175, Luminescent Ge nanocrystallites embedded in a-SiO2 films, 0000 (20 February 1998); doi: 10.1117/12.300692
Proc. SPIE 3175, Preparation and physical properties of MoO3 thin films, 0000 (20 February 1998); doi: 10.1117/12.300703
Proc. SPIE 3175, Microstructural observation of short-wavelength recorded spots of phase-change thin film by atomic force microscopy, 0000 (20 February 1998); doi: 10.1117/12.300714
Proc. SPIE 3175, Electric potential distribution of metal-metal junction, 0000 (20 February 1998); doi: 10.1117/12.300725
Proc. SPIE 3175, Influence of H2O on structure of base-catalyzed porous SiO2 antireflective coatings, 0000 (20 February 1998); doi: 10.1117/12.300638
Application of Films
Proc. SPIE 3175, Thin film technologies for micro-opto-electro-mechanical system applications, 0000 (20 February 1998); doi: 10.1117/12.300639
Proc. SPIE 3175, Intelligent sensors for the next century, 0000 (20 February 1998); doi: 10.1117/12.300640
Proc. SPIE 3175, Optical gas sensing of hematin Langmuir-Blodgett films, 0000 (20 February 1998); doi: 10.1117/12.300641
Proc. SPIE 3175, N2H4 gas detection using Langmuir-Blodgett films of a dithiolene complex on chemiresistor sensors, 0000 (20 February 1998); doi: 10.1117/12.300642
Proc. SPIE 3175, "Optical matching system" of space silicon solar cells, 0000 (20 February 1998); doi: 10.1117/12.300643
Proc. SPIE 3175, Evaluation of diamond-coated tool adhesion by indentation test, 0000 (20 February 1998); doi: 10.1117/12.300644
Proc. SPIE 3175, Protective coatings for large-sized KDP crystals, 0000 (20 February 1998); doi: 10.1117/12.300645
Proc. SPIE 3175, Transition radiation effect in film or foil stack and short-wavelength free-electron lasers (FEL), 0000 (20 February 1998); doi: 10.1117/12.300646
Proc. SPIE 3175, Room-temperature visible photoluminescence from C clusters embedded in thin SiO2 films, 0000 (20 February 1998); doi: 10.1117/12.300647
Optical and Nonlinear Properties
Proc. SPIE 3175, Optical nonlinearity of the films from hybrid and nanocomposite materials, 0000 (20 February 1998); doi: 10.1117/12.300649
Proc. SPIE 3175, Optical nonlinearities of poly(p-phenylene vinylene) (PPV) thin film waveguide, 0000 (20 February 1998); doi: 10.1117/12.300650
Proc. SPIE 3175, Enhancement of the picosecond and femtosecond third harmonic generation from poly(N-vinylcarbazole)/fullerene combination films, 0000 (20 February 1998); doi: 10.1117/12.300651
Proc. SPIE 3175, Optics coatings by magnetron sputtering deposition, 0000 (20 February 1998); doi: 10.1117/12.300652
Proc. SPIE 3175, Characteristic of surface layer of periodic segment proton-exchanged and annealed LiTaO3, 0000 (20 February 1998); doi: 10.1117/12.300653
Proc. SPIE 3175, Temperature dependence of porous silica antireflective (AR) coating, 0000 (20 February 1998); doi: 10.1117/12.300654
Proc. SPIE 3175, Voltage-tunable-color triple-layer organic light emitting diodes, 0000 (20 February 1998); doi: 10.1117/12.300655
Superlattice, Interface, and Surface
Proc. SPIE 3175, Exchange coupling in magnetic superlattices, 0000 (20 February 1998); doi: 10.1117/12.300656
Proc. SPIE 3175, Stimulated and spontaneous emissions in Zd0.8Cd0.2Se-ZnSe strained layer superlattice with Fabry-Perot cavity, 0000 (20 February 1998); doi: 10.1117/12.300657
Proc. SPIE 3175, Surface treatment effects on Si(111) and (100) surface structures and Si/SiO2 interface state, 0000 (20 February 1998); doi: 10.1117/12.300658
Proc. SPIE 3175, General one-dimensional computation formula and application to donor binding energy in GaAs-Ga1-xAlxAs superlattice, 0000 (20 February 1998); doi: 10.1117/12.300660
Proc. SPIE 3175, Interface adhesion comparison of ZnS, SiO2 and Ag thin films deposited by vacuum coating method, 0000 (20 February 1998); doi: 10.1117/12.300661
Proc. SPIE 3175, Iron oxide films in tribological surfaces of alloy steel, 0000 (20 February 1998); doi: 10.1117/12.300662
Proc. SPIE 3175, Photoreflectance spectroscopy of Si surface delta doping on GaAs (001), 0000 (20 February 1998); doi: 10.1117/12.300663
Proc. SPIE 3175, Interface electrical characteristics of passivation films on HgCdTe, 0000 (20 February 1998); doi: 10.1117/12.300664
Superconductor and Diamondlike Films
Proc. SPIE 3175, Diamond film improvement on WC-Co substrate by sputtering interface, 0000 (20 February 1998); doi: 10.1117/12.300665
Proc. SPIE 3175, Synthesis of ultrathin diamond film on fused silica substrate, 0000 (20 February 1998); doi: 10.1117/12.300666
Proc. SPIE 3175, Deposition of YBCO thin film with buffer layer by unbalanced magnetron sputtering, 0000 (20 February 1998); doi: 10.1117/12.300667
Proc. SPIE 3175, Spiral growth pattern of high-Tc superconducting thin films by laser deposition, 0000 (20 February 1998); doi: 10.1117/12.300668
Proc. SPIE 3175, Preparation and properties of Nb2O5-Fe2O3 sol-gel optical films, 0000 (20 February 1998); doi: 10.1117/12.300669
Proc. SPIE 3175, Pulsed laser scanning deposition of diamondlike thin films, 0000 (20 February 1998); doi: 10.1117/12.300671
Preparation of Films I
Proc. SPIE 3175, Stimulated emission under photopumping in ZnSe-based MQWs grown by AP-MOCVD, 0000 (20 February 1998); doi: 10.1117/12.300672
Proc. SPIE 3175, Crystalline state of InSb epilayers on GaAs substrates by metalorganic chemical vapor deposition, 0000 (20 February 1998); doi: 10.1117/12.300673
Proc. SPIE 3175, Sol-gel preparation of PZT thin films with BaTiO3 seeds, 0000 (20 February 1998); doi: 10.1117/12.300674
Proc. SPIE 3175, Simulation and testing of a vertical organometallic vapor phase epitaxy reactor, 0000 (20 February 1998); doi: 10.1117/12.300675
Proc. SPIE 3175, Porous alumina membranes obtained by sol-gel techniques, 0000 (20 February 1998); doi: 10.1117/12.300676
Proc. SPIE 3175, Preparation of TiO2 nanoparticle thin film with sol-gel process, 0000 (20 February 1998); doi: 10.1117/12.300677
Proc. SPIE 3175, Phosphorous-doped hydrogenated nanocrystalline silicon film prepared by PECVD, 0000 (20 February 1998); doi: 10.1117/12.300678
Proc. SPIE 3175, TiO2-doped MoO3 electrochromic thin films via sol-gel method, 0000 (20 February 1998); doi: 10.1117/12.300679
Proc. SPIE 3175, Preparation and properties of Ti(OC4H9)4-GPTMS-MMA derived titania-silica sol-gel optical coatings, 0000 (20 February 1998); doi: 10.1117/12.300680
Properties of Films
Proc. SPIE 3175, Pyroelectric IR sensor based on oxide heterostructures on Si(100) and LaAlO3(100) substrates, 0000 (20 February 1998); doi: 10.1117/12.300682
Proc. SPIE 3175, Recent progress of multilayer ceramic capacitors, 0000 (20 February 1998); doi: 10.1117/12.300683
Proc. SPIE 3175, Photoluminescence and photoconductivity of polymer/C60 combination films, 0000 (20 February 1998); doi: 10.1117/12.300684
Proc. SPIE 3175, Electromigration performance improvement of Al-Si-Cu/TiN/Ti/n+Si contact, 0000 (20 February 1998); doi: 10.1117/12.300685
Proc. SPIE 3175, Poole-Frenkel conduction in antimony-doped tin selenide thin films, 0000 (20 February 1998); doi: 10.1117/12.300686
Proc. SPIE 3175, Field electron emission from carbon-containing thin films, 0000 (20 February 1998); doi: 10.1117/12.300687
Proc. SPIE 3175, Crystalline and electrical properties of SrBi2Ta2O9 thin films prepared by laser ablation, 0000 (20 February 1998); doi: 10.1117/12.300688
Proc. SPIE 3175, Optical absorption in tin selenide thin films, 0000 (20 February 1998); doi: 10.1117/12.300689
Proc. SPIE 3175, Electrical transport properties of a diode consisting of hydrogenated nanocrystalline silicon film, 0000 (20 February 1998); doi: 10.1117/12.300690