PROCEEDINGS VOLUME 3179
XII CONFERENCE ON SOLID STATE CRYSTALS: MATERIALS SCIENCE AND APPLICATIONS | 7-11 OCTOBER 1996
Solid State Crystals in Optoelectronics and Semiconductor Technology
XII CONFERENCE ON SOLID STATE CRYSTALS: MATERIALS SCIENCE AND APPLICATIONS
7-11 October 1996
Zakopane, Poland
Crystalline Nanostructures and Films, Their Formation and Properties
Proc. SPIE 3179, Recent advances in III-nitride materials, characterization and device applications, 0000 (13 June 1997); doi: 10.1117/12.276195
Proc. SPIE 3179, Growth physics of silicon-based heterostructures in MBE processes, 0000 (13 June 1997); doi: 10.1117/12.276206
Proc. SPIE 3179, RF sputtering deposition of CdTe on GaAs substrate, 0000 (13 June 1997); doi: 10.1117/12.276217
Proc. SPIE 3179, Intersubband absorption in multiple quantum wells, 0000 (13 June 1997); doi: 10.1117/12.276228
Proc. SPIE 3179, Photovoltaic effects from nano- and microstructured Si, 0000 (13 June 1997); doi: 10.1117/12.276239
Proc. SPIE 3179, Effect of optical phonon confinement on Raman spectra of porous silicon, 0000 (13 June 1997); doi: 10.1117/12.276246
Proc. SPIE 3179, Time-resolved spectroscopy of low-dimensional structures based on porous silicon, 0000 (13 June 1997); doi: 10.1117/12.276247
Proc. SPIE 3179, New unsubstituted phthalocyanines: structure-properties relation, 0000 (13 June 1997); doi: 10.1117/12.276248
Proc. SPIE 3179, Nanosize microstructure formation by anodizing the thin film structures, 0000 (13 June 1997); doi: 10.1117/12.276249
Proc. SPIE 3179, Detection of oxygen in porous silicon by nuclear reaction 16O(alpha,alpha)16O, 0000 (13 June 1997); doi: 10.1117/12.276196
Proc. SPIE 3179, Spectroscopical characterization of bacterial reaction center Langmuir-Blodgett monolayers, 0000 (13 June 1997); doi: 10.1117/12.276197
Proc. SPIE 3179, Thin film materials on the basis of silver organoacetylide for photovisualization, 0000 (13 June 1997); doi: 10.1117/12.276198
Proc. SPIE 3179, Laser-assisted deposition technique for thin semiconductor layers and low-dimensional structures growth, 0000 (13 June 1997); doi: 10.1117/12.276199
Proc. SPIE 3179, Nanocrystalline diamond for medicine, 0000 (13 June 1997); doi: 10.1117/12.276200
Proc. SPIE 3179, Optical and electrical tests of uniformity of rf PCVD carbon coatings, 0000 (13 June 1997); doi: 10.1117/12.276201
Proc. SPIE 3179, Nanotribological investigations of NCD coatings covering metal slitting saws, 0000 (13 June 1997); doi: 10.1117/12.276202
Proc. SPIE 3179, Preparation, morphology, and electrical properties of TiN1-xCx thin layers, 0000 (13 June 1997); doi: 10.1117/12.276203
Proc. SPIE 3179, Lithographic properties of perylenetetracarboxylic acid derivative films, 0000 (13 June 1997); doi: 10.1117/12.276204
Structural, Optical, and Electric Characterization of Crystalline Materials and Structures
Proc. SPIE 3179, Nanostructural investigations of cuprate superconductors by scanning probe methods, 0000 (13 June 1997); doi: 10.1117/12.276205
Proc. SPIE 3179, Photoreflectance spectroscopy for investigations of semiconductor structures, 0000 (13 June 1997); doi: 10.1117/12.276207
Proc. SPIE 3179, Photoluminescence of GaAs grown by liquid phase epitaxy from Bi solution, 0000 (13 June 1997); doi: 10.1117/12.276208
Proc. SPIE 3179, Photoreflectance and photoluminescence of InGaAs/GaAs structures, 0000 (13 June 1997); doi: 10.1117/12.276209
Proc. SPIE 3179, 2D hole gas in GaAs/(AlGa)As heterostructures investigated by photoreflectance spectroscopy, 0000 (13 June 1997); doi: 10.1117/12.276210
Proc. SPIE 3179, Observation of the new lines in photoluminescence from MOCVD-grown GaAs, 0000 (13 June 1997); doi: 10.1117/12.276211
Proc. SPIE 3179, GaAs/AlGaAs complex structures examined by photoreflectance spectroscopy, 0000 (13 June 1997); doi: 10.1117/12.276212
Proc. SPIE 3179, Optical properties of ZnxMg1-xSe/GaAs heterojunctions grown by MBE, 0000 (13 June 1997); doi: 10.1117/12.276213
Proc. SPIE 3179, Optical and recombination parameters of GaSe obtained from interference spectroscopy of transmittance, reflectance, photoconductivity, and photomagnetoelectric responses, 0000 (13 June 1997); doi: 10.1117/12.276214
Proc. SPIE 3179, Determining carrier lifetime using frequency dependence in contactless photoelectromagnetic investigations of GaAs:Te, GaAs:Si, and MQW on GaAs, 0000 (13 June 1997); doi: 10.1117/12.276215
Proc. SPIE 3179, Lifetimes and band structure of electroluminescence of ZnS:Mn based cells, 0000 (13 June 1997); doi: 10.1117/12.276216
Proc. SPIE 3179, Laser scanning tomograph as the tool for investigation of semiconductor materials, 0000 (13 June 1997); doi: 10.1117/12.276218
Proc. SPIE 3179, AgBr microcrystals studied by scanning tunneling microscopy, 0000 (13 June 1997); doi: 10.1117/12.276219
Proc. SPIE 3179, X-ray investigation of the relaxation and diffusion behavior of strained SiGe/Si structures under hydrostatic pressure at high temperatures, 0000 (13 June 1997); doi: 10.1117/12.276220
Proc. SPIE 3179, X-ray determination of the thermal expansion of TiN, TiC and Ti(N,C) crystals, 0000 (13 June 1997); doi: 10.1117/12.276221
Proc. SPIE 3179, Structural characteristics and applications of zirconium dioxide formed by super-high-speed thermal treatment, 0000 (13 June 1997); doi: 10.1117/12.276222
Proc. SPIE 3179, Influence of internal structure on electrical properties of 1,4-cis polybutadiene films, 0000 (13 June 1997); doi: 10.1117/12.276223
Proc. SPIE 3179, Electron drift mobility in some aromatic hydrocarbons, 0000 (13 June 1997); doi: 10.1117/12.276224
Proc. SPIE 3179, Electric permittivity and remanent polarization in polycrystalline Ba(Ti1-xSnx)O3, 0000 (13 June 1997); doi: 10.1117/12.276225
Sensors, Infrared Focal Plane Arrays, and Solid State Lasers
Proc. SPIE 3179, HgCdTe focal plane arrays for high performance infrared cameras, 0000 (13 June 1997); doi: 10.1117/12.276226
Proc. SPIE 3179, PtSi Schottky-barrier infrared FPAs with CDS readout, 0000 (13 June 1997); doi: 10.1117/12.276227
Proc. SPIE 3179, Infrared thermal detectors versus photon detectors: II. focal plane arrays, 0000 (13 June 1997); doi: 10.1117/12.276229
Proc. SPIE 3179, Isotype heterojunction in HgCdTe photodiodes, 0000 (13 June 1997); doi: 10.1117/12.276230
Proc. SPIE 3179, Influence of doping and geometry on GaN ultraviolet photodiode performance: numerical modeling, 0000 (13 June 1997); doi: 10.1117/12.276231
Proc. SPIE 3179, InAsSb heterojunction photodiodes grown by liquid phase epitaxy, 0000 (13 June 1997); doi: 10.1117/12.276232
Proc. SPIE 3179, Isothermal vapor phase epitaxy and rf sputtering for band gap engineered HgCdTe, 0000 (13 June 1997); doi: 10.1117/12.276233
Proc. SPIE 3179, Lithium niobate as the substratum for the SAW acceleration sensor, 0000 (13 June 1997); doi: 10.1117/12.276234
Proc. SPIE 3179, Activated lithium tetraborate and calcium sulphate in radiation dosimetry, 0000 (13 June 1997); doi: 10.1117/12.276235
Proc. SPIE 3179, Neodymium doped GGG laser compared with YAP, SLGO and YAG lasers, 0000 (13 June 1997); doi: 10.1117/12.276236
Proc. SPIE 3179, Influence of gamma radiation on performance of Nd3+ doped SrLaGa3O7 lasers, 0000 (13 June 1997); doi: 10.1117/12.276237
Models of Electron Transport in Semiconductors and other Materials
Proc. SPIE 3179, Recent advances in TLM algorithms for semiconductor transport, 0000 (13 June 1997); doi: 10.1117/12.276238
Proc. SPIE 3179, Kinetics of luminescence due to spatial correlation of traps, 0000 (13 June 1997); doi: 10.1117/12.276240
Proc. SPIE 3179, Simple methods for the analysis of TL glow curves, 0000 (13 June 1997); doi: 10.1117/12.276241
Proc. SPIE 3179, Space-charge-perturbed currents due to continuous carrier injection, 0000 (13 June 1997); doi: 10.1117/12.276242
Proc. SPIE 3179, Determination of recombination cross section for free electron in n-CuInS2, 0000 (13 June 1997); doi: 10.1117/12.276243
Proc. SPIE 3179, Determination of the activation energy of electron traps with fractional glow technique, 0000 (13 June 1997); doi: 10.1117/12.276244
Proc. SPIE 3179, Determination of the trap depth by analysis of the thermoluminescence peak shape, 0000 (13 June 1997); doi: 10.1117/12.276245
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