PROCEEDINGS VOLUME 3182
MATERIAL SCIENCE AND MATERIAL PROPERTIES FOR INFRARED OPTOELECTRONICS | SEP 30 - OCT 2 1996
Material Science and Material Properties for Infrared Optoelectronics
IN THIS VOLUME

0 Sessions, 66 Papers, 0 Presentations
MATERIAL SCIENCE AND MATERIAL PROPERTIES FOR INFRARED OPTOELECTRONICS
Sep 30 - Oct 2 1996
Uzhgorod, Ukraine
Device Applications
Proc. SPIE 3182, Performance of HgCdTe, InGaAs and quantum well GaAs/AlGaAs staring infrared focal plane arrays, 0000 (26 August 1997); doi: 10.1117/12.280406
Proc. SPIE 3182, Infrared thermal detectors versus photon detectors: I. Pixel performance, 0000 (26 August 1997); doi: 10.1117/12.280417
Proc. SPIE 3182, PbSnSe-on-Si: material and IR-device properties, 0000 (26 August 1997); doi: 10.1117/12.280428
Proc. SPIE 3182, Recent progress in the study of characterization and properties of HgCdTe at the National Laboratory for Infrared Physics in China, 0000 (26 August 1997); doi: 10.1117/12.280439
Proc. SPIE 3182, HTSC detectors, 0000 (26 August 1997); doi: 10.1117/12.280450
Proc. SPIE 3182, Quantum magnetotransport in 2D electron gas in InGaAs/InP heterostructures, 0000 (26 August 1997); doi: 10.1117/12.280461
Proc. SPIE 3182, Novel photovoltaic and bicolor GaAs/AlGaAs quantum well infrared detector, 0000 (26 August 1997); doi: 10.1117/12.280469
Proc. SPIE 3182, Injection-amplification IR-photodiodes, 0000 (26 August 1997); doi: 10.1117/12.280470
Proc. SPIE 3182, Light and electric field influence on resistivity and long-term relaxations of piezoresistivity in p-GaAs/Al0.5Ga0.5As heterostructures, 0000 (26 August 1997); doi: 10.1117/12.280471
Proc. SPIE 3182, Si-Te acoustooptic modulator for fiber optic gas sensor based on midwave InGaAsSb/InAsSbP diode laser, 0000 (26 August 1997); doi: 10.1117/12.280407
Proc. SPIE 3182, Intrinsic quantity of chaos in photodetecting, 0000 (26 August 1997); doi: 10.1117/12.280408
Proc. SPIE 3182, Pyroelectricity: some new research and application aspects, 0000 (26 August 1997); doi: 10.1117/12.280409
Proc. SPIE 3182, Correlation between crystal defects and properties of CdTe:Ge radiation detectors, 0000 (26 August 1997); doi: 10.1117/12.280410
Proc. SPIE 3182, Electronic component design and testing for multielement IR arrays with CCD readout devices, 0000 (26 August 1997); doi: 10.1117/12.280411
Proc. SPIE 3182, Investigation of MIS-structures on MnxHg1-xTe, 0000 (26 August 1997); doi: 10.1117/12.280412
Proc. SPIE 3182, Photoelectric properties of Pb1-x-yGeySnxTe:In epitaxial films, 0000 (26 August 1997); doi: 10.1117/12.280413
Proc. SPIE 3182, Nonlinear optical processes in the GaAs-GaP planar gradient waveguides: computer simulation, 0000 (26 August 1997); doi: 10.1117/12.280414
Proc. SPIE 3182, Laser pulse correcting 2D Pearson-IV ion-implanted impurity profiles near the oxidal defense mask boundary for creating matrix CdHgTe infrared detector, 0000 (26 August 1997); doi: 10.1117/12.280415
Proc. SPIE 3182, Peculiarities of detecting of radiation from small size radiators, 0000 (26 August 1997); doi: 10.1117/12.280416
Proc. SPIE 3182, Photoluminescence and Raman scattering in In0.53Ga0.47As/InP:Dy, 0000 (26 August 1997); doi: 10.1117/12.280418
Proc. SPIE 3182, Liquid phase epitaxial III-V technology for photodetectors manufacturing, 0000 (26 August 1997); doi: 10.1117/12.280419
Proc. SPIE 3182, Tunnel surface recombination in optoelectronic device modeling, 0000 (26 August 1997); doi: 10.1117/12.280420
Proc. SPIE 3182, Sensitivity of two-dimensional electron gas to far infrared radiation, 0000 (26 August 1997); doi: 10.1117/12.280421
Proc. SPIE 3182, Influence of growth conditions on electrophysical properties of HgMnTe/CdZnTe heterostructures, 0000 (26 August 1997); doi: 10.1117/12.280422
Proc. SPIE 3182, Nonlinear optical transmission of Cd0.2Hg0.8Te single crystals at room temperature, 0000 (26 August 1997); doi: 10.1117/12.280423
Characterization and Properties
Proc. SPIE 3182, Band structure engineering of InAs for improved electron transport characteristics, 0000 (26 August 1997); doi: 10.1117/12.280424
Proc. SPIE 3182, Dynamical aspects of carrier transport in quantum well intersubband photodetectors, 0000 (26 August 1997); doi: 10.1117/12.280425
Proc. SPIE 3182, Photoconductivity of a semiconductor with transverse gradient of electric field, 0000 (26 August 1997); doi: 10.1117/12.280426
Proc. SPIE 3182, Narrow-gap alloys (Pb,Sr)Se and (Pb,Eu)Se for optoelectronic devices, 0000 (26 August 1997); doi: 10.1117/12.280427
Proc. SPIE 3182, Determination of diffusion lengths of minority carriers in Hg1-xCdxTe (x~0.2 to 0.3) by EBIC method, 0000 (26 August 1997); doi: 10.1117/12.280429
Proc. SPIE 3182, Ellipsometry and Raman spectroscopy of MBE-grown undoped Si-Si0.78Ge0.22/(001)Si superlattices, 0000 (26 August 1997); doi: 10.1117/12.280430
Proc. SPIE 3182, Kinetics of photoconductivity and metastable electronic states in Pb1-xMnxTe(In) solid solutions, 0000 (26 August 1997); doi: 10.1117/12.280431
Proc. SPIE 3182, Galvanomagnetic and photoelectric properties of electron-irradiated PbTe(Ga), 0000 (26 August 1997); doi: 10.1117/12.280432
Proc. SPIE 3182, Low-dimensional Si structures prepared by laser deposition, 0000 (26 August 1997); doi: 10.1117/12.280433
Proc. SPIE 3182, Influence of the depolarization effect and the nonparabolicity on the second-harmonic generation spectrum in doubly resonant asymmetric quantum well systems, 0000 (26 August 1997); doi: 10.1117/12.280434
Proc. SPIE 3182, Nonparabolicity effect upon the electron mobility in PbTe/PbSnTe quantum wells, 0000 (26 August 1997); doi: 10.1117/12.280435
Proc. SPIE 3182, Photoelectric peculiarities and theoretical analysis of properties of thin semiconductor PbS films prepared by new spray method, 0000 (26 August 1997); doi: 10.1117/12.280436
Proc. SPIE 3182, Photovoltaic effect in graded-band-gap layers with intrinsic type of conductivity, 0000 (26 August 1997); doi: 10.1117/12.280437
Proc. SPIE 3182, Energy spectrum of irradiation-induced defects in Pb1-xSnxTe, 0000 (26 August 1997); doi: 10.1117/12.280438
Proc. SPIE 3182, New possibilities of Hall method for metastable centers investigation in acousto-optical crystals, 0000 (26 August 1997); doi: 10.1117/12.280440
Proc. SPIE 3182, Multispectral photoelectric characteristics induced by metastable electronic states in PbTe(Ga), 0000 (26 August 1997); doi: 10.1117/12.280441
Proc. SPIE 3182, Magnetic field-induced prolonged changes of electric parameters of infrared MOS-photodetectors, 0000 (26 August 1997); doi: 10.1117/12.280442
Proc. SPIE 3182, Peculiarities of radiative recombination in Vanadium-doped CdTe crystals, 0000 (26 August 1997); doi: 10.1117/12.280443
Proc. SPIE 3182, Thermal conductivity of PbTe-MnTe solid solutions, 0000 (26 August 1997); doi: 10.1117/12.280444
Proc. SPIE 3182, Magnetopolaron effect in diluted semimagnetic semiconductors, 0000 (26 August 1997); doi: 10.1117/12.280445
Proc. SPIE 3182, Reflection spectrum of high-conductivity solid solutions, 0000 (26 August 1997); doi: 10.1117/12.280446
Proc. SPIE 3182, Abnormal magnetic properties and high-temperature superconductivity of metal and semiconductor single crystals, 0000 (26 August 1997); doi: 10.1117/12.280447
Proc. SPIE 3182, Calculations of photoelectric amplification coefficient in graded-band-gap photoresistors, 0000 (26 August 1997); doi: 10.1117/12.280448
Proc. SPIE 3182, Investigations of transport phenomena in narrow-gap semiconductors, 0000 (26 August 1997); doi: 10.1117/12.280449
Proc. SPIE 3182, Modification of defect structure and properties of CdxHg1-xTe semiconductors by laser pulses, 0000 (26 August 1997); doi: 10.1117/12.280451
Proc. SPIE 3182, Irreversible gigantic modification of semiconductor optical properties, 0000 (26 August 1997); doi: 10.1117/12.280452
Proc. SPIE 3182, Deposition technique and external factors effect on Ge33As12Se55-Si heterostructure mechanical properties, 0000 (26 August 1997); doi: 10.1117/12.280453
Proc. SPIE 3182, Interconsistent band structure of narrow-gap Hg1-xCdxTe alloys obtained with consideration of far-band influence, 0000 (26 August 1997); doi: 10.1117/12.280454
Proc. SPIE 3182, Influence of laser irradiation on Hg1-xMnxTe photoelectrical properties, 0000 (26 August 1997); doi: 10.1117/12.280455
Semiconductor Growth Techniques for IR Optoelectronic Devices
Proc. SPIE 3182, Review on the diffusion of Hg in CdTe, 0000 (26 August 1997); doi: 10.1117/12.280456
Proc. SPIE 3182, Thermodynamics of self-propagating high-temperature synthesis of ternary semiconductors, 0000 (26 August 1997); doi: 10.1117/12.280457
Proc. SPIE 3182, Percolation effects in Pb1-xGexTe solid solutions, 0000 (26 August 1997); doi: 10.1117/12.280458
Proc. SPIE 3182, Epitaxial structures based on narrow band-gap InAs1-x-ySbxBiy solid solutions, 0000 (26 August 1997); doi: 10.1117/12.280459
Proc. SPIE 3182, High-power pulse-electron beam modification and ion implantation of Hg1-xCdxTe epitaxial structures, 0000 (26 August 1997); doi: 10.1117/12.280460