PROCEEDINGS VOLUME 3183
ISMA '97 INTERNATIONAL SYMPOSIUM ON MICROELECTRONICS AND ASSEMBLY | 23-26 JUNE 1997
Microlithographic Techniques in IC Fabrication
ISMA '97 INTERNATIONAL SYMPOSIUM ON MICROELECTRONICS AND ASSEMBLY
23-26 June 1997
Singapore, Singapore
Advances in UV and DUV Lithography
Proc. SPIE 3183, 193-nm excimer laser microstepper system, 0000 (14 August 1997); doi: 10.1117/12.280529
Proc. SPIE 3183, Advanced lithographic methods for 300-nm contact patterning over severe topography with i-line stepper, 0000 (14 August 1997); doi: 10.1117/12.280539
Proc. SPIE 3183, Effects of DUV resist sensitivities on lithographic process window, 0000 (14 August 1997); doi: 10.1117/12.280551
Proc. SPIE 3183, Direct patterning of electrodeposited polythiophene thin films by ultraviolet laser ablation, 0000 (14 August 1997); doi: 10.1117/12.280552
Process Modeling and Imaging Equipment
Proc. SPIE 3183, Comparison of different optical proximity correction models with three-dimensional photolithography simulation over planar substrates, 0000 (14 August 1997); doi: 10.1117/12.280553
Proc. SPIE 3183, Broadband microlithography: process development using PROLITH simulator, 0000 (14 August 1997); doi: 10.1117/12.280554
Proc. SPIE 3183, Optimization of BARC for nonplanar lithography by three-dimensional electromagnetic simulation, 0000 (14 August 1997); doi: 10.1117/12.280555
Proc. SPIE 3183, Relationship between ruling quality and lithographic gap in proximity photolithography, 0000 (14 August 1997); doi: 10.1117/12.280530
X-Ray, Ion-Beam, and E-Beam Lithography
Proc. SPIE 3183, Compact plasma focus soft x-ray source with high repetition rate and high intensity, 0000 (14 August 1997); doi: 10.1117/12.280531
Proc. SPIE 3183, Preliminary results on x-ray lithography using a compact plasma focus, 0000 (14 August 1997); doi: 10.1117/12.280532
Proc. SPIE 3183, Deep ion-beam lithography for micromachining applications, 0000 (14 August 1997); doi: 10.1117/12.280533
Proc. SPIE 3183, New process for nanometer-scale devices, 0000 (14 August 1997); doi: 10.1117/12.280534
E-Beam Lithography
Proc. SPIE 3183, Direct-write electron-beam lithography for submicron integrated circuit fabrication, 0000 (14 August 1997); doi: 10.1117/12.280535
Proc. SPIE 3183, Profile characteristics and simulation of chemically amplified resists in electron-beam lithography, 0000 (14 August 1997); doi: 10.1117/12.280536
Proc. SPIE 3183, Measurements and analysis of beam current and beam diameter of an electron-beam lithography system, 0000 (14 August 1997); doi: 10.1117/12.280537
Proc. SPIE 3183, Lithography using a compact plasma focus electron source, 0000 (14 August 1997); doi: 10.1117/12.280538
Process Control, Inspection, and Related Processes I
Process Control, Inspection, and Related Processes II
Plenary Session
Proc. SPIE 3183, X-ray holography for VLSI using synthetic bilevel holograms, 0000 (14 August 1997); doi: 10.1117/12.280549
Proc. SPIE 3183, Resolution and depth of focus in optical lithography, 0000 (14 August 1997); doi: 10.1117/12.280550
Back to Top