PROCEEDINGS VOLUME 3214
MICROELECTRONIC MANUFACTURING | 1-2 OCTOBER 1997
Multilevel Interconnect Technology
IN THIS VOLUME

0 Sessions, 16 Papers, 0 Presentations
MICROELECTRONIC MANUFACTURING
1-2 October 1997
Austin, TX, United States
Interconnect Metals and Barriers I
Proc. SPIE 3214, Advanced PVD Ti/TiN liners for contact and via applications, 0000 (5 September 1997); doi: 10.1117/12.284651
Proc. SPIE 3214, Line length dependencies in interconnect optimization, 0000 (5 September 1997); doi: 10.1117/12.284657
Proc. SPIE 3214, Electroless Cu and barrier layers for subhalf-micron multilevel interconnects, 0000 (5 September 1997); doi: 10.1117/12.284661
Proc. SPIE 3214, Integrated arc suppression unit for defect reduction in PVD applications, 0000 (5 September 1997); doi: 10.1117/12.284662
Proc. SPIE 3214, Correlation between aluminum alloy sputtering target metallurgical characteristics, arc initiation, and in-film defect intensity, 0000 (5 September 1997); doi: 10.1117/12.284663
Proc. SPIE 3214, Thermal stability of PECVD W-B-N thin film as a diffusion barrier, 0000 (5 September 1997); doi: 10.1117/12.284664
CMP of Metals and Oxides
Proc. SPIE 3214, Productivity enhancement by replacing photoresist etchback by chemical-mechanical polishing for interlayer dielectric planarization, 0000 (5 September 1997); doi: 10.1117/12.284665
Proc. SPIE 3214, Tungsten CMP process characterization for sub-0.35-um micron technology, 0000 (5 September 1997); doi: 10.1117/12.284666
Proc. SPIE 3214, Low-pressure aluminum planarization for sub-0.5-um contact and via holes, 0000 (5 September 1997); doi: 10.1117/12.284652
Proc. SPIE 3214, Study of wetting properties of Ti/TiN liners deposited by ion metal plasma PVD for low-temperature sub-0.25-um Al fill technology, 0000 (5 September 1997); doi: 10.1117/12.284653
Low k Dielectrics
Proc. SPIE 3214, Integration of low-k organic flowable SOG in a non-etchback/CMP process, 0000 (5 September 1997); doi: 10.1117/12.284654
Proc. SPIE 3214, Characterization of high-density plasma CVD USG film, 0000 (5 September 1997); doi: 10.1117/12.284655
Proc. SPIE 3214, Novel MOCVD processes for nanoscale dielectric and ferroelectric thin films, 0000 (5 September 1997); doi: 10.1117/12.284656
Interconnect Metals and Barriers II
Proc. SPIE 3214, Plasma-induced metal sidewall undercut and its dependence on the layout geometry, 0000 (5 September 1997); doi: 10.1117/12.284658
Proc. SPIE 3214, Statistical design of experimental analysis of TiN films deposited by ion metal plasma PVD for sub-0.25-um IC process applications, 0000 (5 September 1997); doi: 10.1117/12.284659
Proc. SPIE 3214, Removal of surface oxide from electrical test (E-test) pads using an argon sputter etch procedure to recover TAB wafers, 0000 (5 September 1997); doi: 10.1117/12.284660
Back to Top