PROCEEDINGS VOLUME 3215
MICROELECTRONIC MANUFACTURING | 1-2 OCTOBER 1997
In-Line Characterization Techniques for Performance and Yield Enhancement in Microelectronic Manufacturing
MICROELECTRONIC MANUFACTURING
1-2 October 1997
Austin, TX, United States
Optical Characterization Techniques I
Proc. SPIE 3215, Evaluation of lifetime and Hi-Q modules in surface charge analysis, 0000 (2 September 1997); doi: 10.1117/12.284681
Proc. SPIE 3215, Process monitoring of ultrathin oxides using surface charge analysis, 0000 (2 September 1997); doi: 10.1117/12.284682
Proc. SPIE 3215, Influence of oxygen precipitates on the measurement of minority carrier diffusion length in p-type silicon material using surface photovoltage technique, 0000 (2 September 1997); doi: 10.1117/12.284683
Optical Characterization Techniques II
Proc. SPIE 3215, Mobile charge testing of sodium-contaminated thermal oxides using corona temperature stressing, 0000 (2 September 1997); doi: 10.1117/12.284684
Proc. SPIE 3215, Noncontact surface-resistivity measurements on production wafers, 0000 (2 September 1997); doi: 10.1117/12.284685
Proc. SPIE 3215, Room-temperature luminescence diagnostics in polycrystalline silicon, 0000 (2 September 1997); doi: 10.1117/12.284686
Defect Characterization
Proc. SPIE 3215, Defect characterization and light scattering by PSL spheres on tungsten CMP wafers, 0000 (2 September 1997); doi: 10.1117/12.284667
Proc. SPIE 3215, Electrical defect density modeling for different technology nodes, process complexity, and critical areas, 0000 (2 September 1997); doi: 10.1117/12.284668
Electrical Characterization
Proc. SPIE 3215, In-line charge-trapping characterization of dielectrics for sub-0.5-um CMOS technologies, 0000 (2 September 1997); doi: 10.1117/12.284669
Proc. SPIE 3215, Cyclic I-V and Q-V: new measurement techniques for monitoring processes and processing-induced damage, 0000 (2 September 1997); doi: 10.1117/12.284670
Proc. SPIE 3215, Implementation of in-line Fowler-Nordheim testing for tunnel oxide thickness determination in manufacturing, 0000 (2 September 1997); doi: 10.1117/12.284671
Proc. SPIE 3215, In-line testing of antenna-type test structures for separation of sources of process-induced damage, 0000 (2 September 1997); doi: 10.1117/12.284672
Proc. SPIE 3215, Monitoring process-induced oxide breakdown and its correlation to interface traps, 0000 (2 September 1997); doi: 10.1117/12.284673
Novel Characterization Techniques
Proc. SPIE 3215, Molecular and ionic contamination monitoring for cleanroom air and wafer surfaces, 0000 (2 September 1997); doi: 10.1117/12.284674
Proc. SPIE 3215, Rapid in-fab monitoring of ion implant doses using total x-ray fluorescence, 0000 (2 September 1997); doi: 10.1117/12.284675
Proc. SPIE 3215, Process damage in single-wafer cleaning process, 0000 (2 September 1997); doi: 10.1117/12.284676
Poster Session
Proc. SPIE 3215, Novel method to calculate the probability of silicon damage of DRAM based on the process control capability, 0000 (2 September 1997); doi: 10.1117/12.284677
Proc. SPIE 3215, Computer simulation for estimation of dislocation multiplication due to gravitational stress: challenges and opportunities toward slip-free 300-mm-diameter silicon wafers for ultralarge-scale integr, 0000 (2 September 1997); doi: 10.1117/12.284678
Proc. SPIE 3215, Contaminant sources causing non-stick-on-pad during die bonding, 0000 (2 September 1997); doi: 10.1117/12.284679
Novel Characterization Techniques
Proc. SPIE 3215, New aspects of optical scatterometry applied to microtechnology, 0000 (2 September 1997); doi: 10.1117/12.284680
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