PROCEEDINGS VOLUME 3216
MICROELECTRONIC MANUFACTURING | 1-2 OCTOBER 1997
Microelectronic Manufacturing Yield, Reliability, and Failure Analysis III
MICROELECTRONIC MANUFACTURING
1-2 October 1997
Austin, TX, United States
Device Reliability, Failure Mechanisms and Analysis I
Proc. SPIE 3216, Quick kill passivation integrity study, 0000 (11 September 1997); doi: 10.1117/12.284702
Device Reliability, Failure Mechanisms and Analysis II
Proc. SPIE 3216, Unique case study of low yield analysis of 1.5-um BiCMOS technology, 0000 (11 September 1997); doi: 10.1117/12.284703
Proc. SPIE 3216, Characterization of environmental halogen molecule contamination-induced pad surface corrosion, 0000 (11 September 1997); doi: 10.1117/12.284704
Proc. SPIE 3216, Statistical multilot characterization of spatial thickness variations in LPCVD oxide, nitride, polysilicon, and thermal oxide films, 0000 (11 September 1997); doi: 10.1117/12.284705
Design for Reliability
Proc. SPIE 3216, Technology mapping for hot-carrier reliability enhancement, 0000 (11 September 1997); doi: 10.1117/12.284706
Proc. SPIE 3216, Yield-enhanced routing for high-performance VLSI designs, 0000 (11 September 1997); doi: 10.1117/12.284707
Yield and Inline Monitoring
Proc. SPIE 3216, Automatic final inspection: an important nonexpensive control to guarantee long-term reliability, 0000 (11 September 1997); doi: 10.1117/12.284687
Yield Modeling and Statistics I
Proc. SPIE 3216, Evaluation of pad life in chemical mechanical polishing process using statistical metrology, 0000 (11 September 1997); doi: 10.1117/12.284688
Yield Modeling and Statistics II
Proc. SPIE 3216, Effect of cycle time and fab yield variation on the number of wafer outs variability: a Monte Carlo case study, 0000 (11 September 1997); doi: 10.1117/12.284689
Poster Session
Proc. SPIE 3216, Die allocation optimization for yield improvement, 0000 (11 September 1997); doi: 10.1117/12.284690
Yield Modeling and Statistics II
Proc. SPIE 3216, Knowledge-based software system for fast yield loss detection in a semiconductor fab, 0000 (11 September 1997); doi: 10.1117/12.284691
Yield Modeling and Statistics III
Proc. SPIE 3216, STADIUM SOI reliability simulator for the analysis of hot-electron and ESD-induced degradation in nonisothermal devices, 0000 (11 September 1997); doi: 10.1117/12.284692
Proc. SPIE 3216, Automated redundant via placement for increased yield and reliability, 0000 (11 September 1997); doi: 10.1117/12.284693
Proc. SPIE 3216, Defect cluster analysis to detect equipment-specific yield loss based on yield-to-area calculations, 0000 (11 September 1997); doi: 10.1117/12.284694
Poster Session
Proc. SPIE 3216, Coupling between hot-carrier degradation modes of pMOSFETs, 0000 (11 September 1997); doi: 10.1117/12.284695
Proc. SPIE 3216, Statistical effects of plasma etch damage on hot-carrier degradation, 0000 (11 September 1997); doi: 10.1117/12.284696
Proc. SPIE 3216, Arc-induced gate oxide breakdown in plasma etching process, 0000 (11 September 1997); doi: 10.1117/12.284697
Proc. SPIE 3216, Investigations of mechanical stress and electromigration in an aluminum meander structure, 0000 (11 September 1997); doi: 10.1117/12.284698
Proc. SPIE 3216, Modeling of defect propagation/growth for yield impact prediction in VLSI manufacturing, 0000 (11 September 1997); doi: 10.1117/12.284699
Proc. SPIE 3216, Failure rate estimation in the case of zero failures, 0000 (11 September 1997); doi: 10.1117/12.284700
Proc. SPIE 3216, Die-counting algorithm for yield modeling and die-per-wafer optimization, 0000 (11 September 1997); doi: 10.1117/12.284701
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