PROCEEDINGS VOLUME 3236
17TH ANNUAL BACUS PHOTOMASK TECHNOLOGY AND MANAGEMENT | 17-19 SEPTEMBER 1997
17th Annual BACUS Symposium on Photomask Technology and Management
17TH ANNUAL BACUS PHOTOMASK TECHNOLOGY AND MANAGEMENT
17-19 September 1997
Redwood City, CA, United States
Photomask Patterning
Proc. SPIE 3236, Advanced electron-beam pattern generation technology for 180-nm masks, 0000 (12 February 1997); doi: 10.1117/12.301178
Proc. SPIE 3236, Advantages of variable-shaped e-beam writers for mask making, 0000 (12 February 1997); doi: 10.1117/12.301188
Proc. SPIE 3236, Evaluation of process capabilities for 50 keV with rectangular-shaped beam using computer simulation, 0000 (12 February 1997); doi: 10.1117/12.301198
Proc. SPIE 3236, Performance of a new high-NA scanned-laser mask lithography system, 0000 (12 February 1997); doi: 10.1117/12.301205
Proc. SPIE 3236, Cost-effective pattern generation for 64-Mb and 256-Mb photomasks, 0000 (12 February 1997); doi: 10.1117/12.301213
Proc. SPIE 3236, 1997 mask industry quality assessment, 0000 (12 February 1997); doi: 10.1117/12.301223
Photomask Resist and Process
Proc. SPIE 3236, Film stress and geometry effects in chrome photomask cleaning damage, 0000 (12 February 1997); doi: 10.1117/12.301230
Proc. SPIE 3236, Performance of positive-tone chemically amplified resists for next-generation photomask fabrication, 0000 (12 February 1997); doi: 10.1117/12.301231
Proc. SPIE 3236, Plasma etching of Cr photomasks: optimization of process conditions and CD control, 0000 (12 February 1997); doi: 10.1117/12.301179
Inspection and Repair
Proc. SPIE 3236, New methodology for thoroughly characterizing the performance of advanced reticle inspection platforms, 0000 (12 February 1997); doi: 10.1117/12.301180
Proc. SPIE 3236, Improved image acquistion for advanced reticle inspection, 0000 (12 February 1997); doi: 10.1117/12.301181
Proc. SPIE 3236, Clear-field reticle defect disposition for advanced sub-half-micron lithography, 0000 (12 February 1997); doi: 10.1117/12.301182
Proc. SPIE 3236, Printability and repair techniques for DUV photomasks, 0000 (12 February 1997); doi: 10.1117/12.301183
Proc. SPIE 3236, Integration of KLA Starlight for phase-shift mask manufacturing, 0000 (12 February 1997); doi: 10.1117/12.301184
Mask Metrology
Proc. SPIE 3236, Initial characterization results of a low-voltage CD SEM for reticle metrology, 0000 (12 February 1997); doi: 10.1117/12.301185
Proc. SPIE 3236, New electron microscope system for pattern placement metrology, 0000 (12 February 1997); doi: 10.1117/12.301186
Proc. SPIE 3236, Measuring critical dimensions and overlays as prescribed by the National Technology Roadmap for Semiconductors, 0000 (12 February 1997); doi: 10.1117/12.284025
Proc. SPIE 3236, Fabrication of submicrometer photomask linewidth standards, 0000 (12 February 1997); doi: 10.1117/12.301187
Advanced Mask Technology
Proc. SPIE 3236, Next-generation mask strategy: are technologies ready for mass production of 256 MDRAM? Summary of Photomask Japan '97 Panel Discussion, 0000 (12 February 1997); doi: 10.1117/12.301189
Proc. SPIE 3236, Yield, metrology, and inspection characteristics of SCALPEL masks, 0000 (12 February 1997); doi: 10.1117/12.301190
Proc. SPIE 3236, Focused ion beam repair of 193-nm reticle at 0.18-um design rules, 0000 (12 February 1997); doi: 10.1117/12.301191
Proc. SPIE 3236, Evaluation of resist models for fast optical proximity correction, 0000 (12 February 1997); doi: 10.1117/12.301192
Proc. SPIE 3236, 100-nm defect detection using an existing image acquisition system, 0000 (12 February 1997); doi: 10.1117/12.301193
Reticle Enhancement Technologies
Proc. SPIE 3236, Electron-beam lithography simulation for mask making: I, 0000 (12 February 1997); doi: 10.1117/12.301194
Proc. SPIE 3236, Detection of submicron phase defects on multiphase random logic reticles, 0000 (12 February 1997); doi: 10.1117/12.301195
Proc. SPIE 3236, Novel alternating phase-shift mask with improved phase accuracy, 0000 (12 February 1997); doi: 10.1117/12.301196
Proc. SPIE 3236, Tritone PSM and its performance, 0000 (12 February 1997); doi: 10.1117/12.301197
BACUS '97 Special Focus Program: Understanding and Meeting CD Specifications for Advanced Reticles
Proc. SPIE 3236, Impact of photomasks on linewidth variation, 0000 (12 February 1997); doi: 10.1117/12.301199
Proc. SPIE 3236, Photomask metrology in the era of neolithography, 0000 (12 February 1997); doi: 10.1117/12.284026
Proc. SPIE 3236, Practical approach to evaluating mask CD uniformity patterned by a variable-shaped beam, 0000 (12 February 1997); doi: 10.1117/12.301200
Poster Session
Proc. SPIE 3236, Manufacture of photomasks for critical layers of sub-half-micron CMOS technology, 0000 (12 February 1997); doi: 10.1117/12.301201
BACUS '97 Special Focus Program: Understanding and Meeting CD Specifications for Advanced Reticles
Proc. SPIE 3236, Current status of mask CD uniformity as related to e-beam system, 0000 (12 February 1997); doi: 10.1117/12.301202
Proc. SPIE 3236, On the way to 1 Gb: demonstration of e-beam proximity effect correction for mask making, 0000 (12 February 1997); doi: 10.1117/12.284027
Proc. SPIE 3236, Comparison of line shortening assessed by aerial image and wafer measurements, 0000 (12 February 1997); doi: 10.1117/12.301203
Proc. SPIE 3236, Application of alternating phase-shifting masks to 140-nm gate patterning: linewidth control improvements and design optimization, 0000 (12 February 1997); doi: 10.1117/12.301204
Poster Session
Proc. SPIE 3236, Automatic gate CD control for a full-chip-scale SRAM device, 0000 (12 February 1997); doi: 10.1117/12.301206
Proc. SPIE 3236, Three-dimensional electron-beam lithography simulator V2.0 for the gigabit-era photomask manufacturing, 0000 (12 February 1997); doi: 10.1117/12.301207
Proc. SPIE 3236, Accurate and repeatable mask defect measurements for quarter-micron technology, 0000 (12 February 1997); doi: 10.1117/12.301208
Proc. SPIE 3236, Advanced photomask reconstruction with the Seiko SIR 3000, 0000 (12 February 1997); doi: 10.1117/12.301209
Proc. SPIE 3236, OPC technology road map to 0.14-um design rules, 0000 (12 February 1997); doi: 10.1117/12.301210
Proc. SPIE 3236, Comparison of EBR-900 M1 and ZEP 7000 with plasma-etch processing for MEBES 4500S, 0000 (12 February 1997); doi: 10.1117/12.301211
Proc. SPIE 3236, Characterization and modeling of CD performance with thin PBS, 0000 (12 February 1997); doi: 10.1117/12.301212
Proc. SPIE 3236, Electron-beam lithography simulation for mask making: II. Comparison of the lithographic performance of PBS and EBR 900-M1, 0000 (12 February 1997); doi: 10.1117/12.301214
Proc. SPIE 3236, Accuracy of 3D optical lithography simulation for advanced reticles, 0000 (12 February 1997); doi: 10.1117/12.301215
Proc. SPIE 3236, Defect inspection and printability of deep-UV halftone phase-shifting mask, 0000 (12 February 1997); doi: 10.1117/12.301216
Proc. SPIE 3236, Printability of 1X reticle defects for submicron design rules, 0000 (12 February 1997); doi: 10.1117/12.301217
Proc. SPIE 3236, Marathon damage testing of pellicles for 193-nm lithography, 0000 (12 February 1997); doi: 10.1117/12.301218
Proc. SPIE 3236, Software tool for temperature simulation in electron-beam lithography: TEMPTATION, 0000 (12 February 1997); doi: 10.1117/12.301219
Proc. SPIE 3236, Edge-placement accuracy of opaque and clear defect repairs using focused ion beam technology, 0000 (12 February 1997); doi: 10.1117/12.301220
Proc. SPIE 3236, Chemically enhanced FIB repair of opaque defects on molybdenum silicide photomasks, 0000 (12 February 1997); doi: 10.1117/12.301221
Proc. SPIE 3236, PBS performance evaluation under a high-accelerating-voltage e-beam exposure, 0000 (12 February 1997); doi: 10.1117/12.301222
Photomask Patterning
Proc. SPIE 3236, Evaluation of a next-generation vector electron-beam mask pattern lithography system, 0000 (12 February 1997); doi: 10.1117/12.301224
Poster Session
Proc. SPIE 3236, Analysis of defect classification and sizing information with a dedicated white-light/laser-confocal microscope review station, 0000 (12 February 1997); doi: 10.1117/12.301225
Proc. SPIE 3236, Is mask repair economic?, 0000 (12 February 1997); doi: 10.1117/12.301226
Proc. SPIE 3236, Mask technology for excimer laser projection ablation, 0000 (12 February 1997); doi: 10.1117/12.301227
BACUS '97 Special Focus Program: Understanding and Meeting CD Specifications for Advanced Reticles
Proc. SPIE 3236, Demonstrating next-generation CD uniformity with today's tools and processes, 0000 (12 February 1997); doi: 10.1117/12.301228
Poster Session
Proc. SPIE 3236, Attenuated phase-shift masks reducing side-lobe effect in DRAM peripheral circuit region, 0000 (12 February 1997); doi: 10.1117/12.301229