PROCEEDINGS VOLUME 3277
OPTOELECTRONICS AND HIGH-POWER LASERS AND APPLICATIONS | 24-30 JANUARY 1998
Ultrafast Phenomena in Semiconductors II
OPTOELECTRONICS AND HIGH-POWER LASERS AND APPLICATIONS
24-30 January 1998
San Jose, CA, United States
Keynote Session
Proc. SPIE 3277, Ultrafast coherent and incoherent dynamics of intersubband excitations in quasi-two-dimensional semiconductors, 0000 (23 April 1998); doi: 10.1117/12.306140
Coherent Effects in Semiconductors and Superlattices
Proc. SPIE 3277, Coherent electric-field effects in semiconductors, 0000 (23 April 1998); doi: 10.1117/12.306150
Proc. SPIE 3277, Theory of coherent phonon oscillations in nonpolar and polar semiconductors, 0000 (23 April 1998); doi: 10.1117/12.306159
Proc. SPIE 3277, Coherent control of interband transitions in semiconductor heterostructures, 0000 (23 April 1998); doi: 10.1117/12.306169
Proc. SPIE 3277, Optical study of THz plasmon-phonon oscillations in semiconductors, 0000 (23 April 1998); doi: 10.1117/12.306170
Proc. SPIE 3277, Theoretical studies of coherent phonon generation in dense media, 0000 (23 April 1998); doi: 10.1117/12.306171
Proc. SPIE 3277, Coherent control in bulk and nanostructure semiconductors, 0000 (23 April 1998); doi: 10.1117/12.306172
Proc. SPIE 3277, Coherence properties of semiconductor nanostructures, 0000 (23 April 1998); doi: 10.1117/12.306173
Proc. SPIE 3277, Coherent dynamics of excitons in GaN studied by femtosecond four-wave-mixing spectroscopy, 0000 (23 April 1998); doi: 10.1117/12.306141
Ultrafast Optical Process in Bulk and Low-Dimensional Quantum Structures
Proc. SPIE 3277, Dynamics of Bloch oscillations in semiconductor superlattices: direct determination of displacement, 0000 (23 April 1998); doi: 10.1117/12.306142
Proc. SPIE 3277, Ultrafast hole relaxation in III-V semiconductors, 0000 (23 April 1998); doi: 10.1117/12.306143
Proc. SPIE 3277, Dynamics of fundamental optical transitions in group III nitrides, 0000 (23 April 1998); doi: 10.1117/12.306144
Proc. SPIE 3277, Coherent spectroscopy of semiconductor quantum wires, 0000 (23 April 1998); doi: 10.1117/12.306145
Proc. SPIE 3277, Monte Carlo simulation of the effects of X6 and X7 intervalley scattering on the ultrafast relaxation of photoexcited carriers in GaAs, 0000 (23 April 1998); doi: 10.1117/12.306146
Proc. SPIE 3277, Carrier dynamics of anti-Stokes photoluminescence in staggered-band-lineup AlxGa1-xAs/GaInP2 heterostructures, 0000 (23 April 1998); doi: 10.1117/12.306147
Proc. SPIE 3277, Picosecond dynamics of low-density excitons in GaAs quantum wells, 0000 (23 April 1998); doi: 10.1117/12.306148
Keynote Session
Proc. SPIE 3277, Ensemble Monte Carlo simulations of ultrafast phenomena in semiconductors, 0000 (23 April 1998); doi: 10.1117/12.306149
Ultrafast Lasers and Devices I
Proc. SPIE 3277, Electron/hole velocity overshoot in sub-100-nm Si metal-oxide-semiconductor field-effect transistors and its application to low-voltage operation, 0000 (23 April 1998); doi: 10.1117/12.306151
Proc. SPIE 3277, Wigner function simulation of intrinsic oscillations, hysteresis, and bistability in resonant tunneling structures, 0000 (23 April 1998); doi: 10.1117/12.306152
Proc. SPIE 3277, Arsenic-implanted GaAs: an alternative material to low-temperature-grown GaAs for ultrafast optoelectronic applications, 0000 (23 April 1998); doi: 10.1117/12.306153
Proc. SPIE 3277, Demonstration of the ultrafast response of 50-nm gate HEMTs using cw optical mixing techniques, 0000 (23 April 1998); doi: 10.1117/12.306154
Proc. SPIE 3277, Monte Carlo simulations of GaAs-based ultrafast optical mixers, 0000 (23 April 1998); doi: 10.1117/12.306155
Ultrafast Devices and Lasers II
Proc. SPIE 3277, Ultrafast electro-optic sensors and magneto-optic sensors for THz beams, 0000 (23 April 1998); doi: 10.1117/12.306156
Proc. SPIE 3277, Wigner function and density matrices and their application to transport properties of semiconductor devices, 0000 (23 April 1998); doi: 10.1117/12.306157
Proc. SPIE 3277, Semiconductor femtosecond optoelectronic devices for ultrafast telecommunications and signal processing, 0000 (23 April 1998); doi: 10.1117/12.306158
Nonlinear Dynamics in Semiconductors, Superlattices, and Microcavities
Proc. SPIE 3277, Surface-emitting second harmonic generation from short laser pulses, 0000 (23 April 1998); doi: 10.1117/12.306160
Proc. SPIE 3277, Ultrafast measurements of electric fields in semiconductors by optical harmonic generation, 0000 (23 April 1998); doi: 10.1117/12.306161
Proc. SPIE 3277, Ultrafast carrier dynamics and optical nonlinearities of low-temperature-grown multiple quantum wells, 0000 (23 April 1998); doi: 10.1117/12.306162
Proc. SPIE 3277, Superradiant exciton/photon coupling in a wedged (ln,Ga)As/GaAs multiple-quantum-well Bragg structure, 0000 (23 April 1998); doi: 10.1117/12.306163
Poster Session
Proc. SPIE 3277, Self-heating as a tool for measuring sub-0.1-um silicon-on-insulator device parameters, 0000 (23 April 1998); doi: 10.1117/12.306164
Proc. SPIE 3277, Direct observation of electron velocity overshoot in an InP p-i-n nanostructure semiconductor: a subpicosecond Raman probe, 0000 (23 April 1998); doi: 10.1117/12.306165
Proc. SPIE 3277, Effects of carrier screening on the average electric field in a GaAs-based p-i-n nanostructure under subpicosecond laser excitation, 0000 (23 April 1998); doi: 10.1117/12.306166
Proc. SPIE 3277, Subpicosecond time-resolved Raman studies of field-induced electron transport and phonon dynamics in a GaAs-based p-i-n nanostructure, 0000 (23 April 1998); doi: 10.1117/12.306167
Proc. SPIE 3277, Subpicosecond time-resolved Raman studies of nonequilibrium excitations in wide-bandgap GaN, 0000 (23 April 1998); doi: 10.1117/12.306168
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